V6204610 VID

REVISIONS
LTR
DESCRIPTION
DATE
APPROVED
A
Correct lead finish on last page. Update
boilerplate. - CFS
05-11-08
Thomas M. Hess
B
Update boilerplate paragraphs to current
requirements. - PHN
12-03-22
Thomas M. Hess
CURRENT DESIGN ACTIVITY CAGE CODE 16236
HAS CHANGED NAMES TO:
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
Prepared in accordance with ASME Y14.24
Vendor item drawing
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PMIC N/A
PREPARED BY
Phu H. Nguyen
Original date of drawing
CHECKED BY
Phu H. Nguyen
YY MM DD
04-04-08
APPROVED BY
Thomas M. Hess
SIZE
A
REV
AMSC N/A
CODE IDENT. NO.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43218-3990
TITLE
MICROCIRCUIT, DIGITAL, FIXED POINT DIGITAL
SIGNAL PROCESSOR, MONOLITHIC SILICON
DWG NO.
V62/04610
16236
B
PAGE
1
OF
44
5962-V045-12
1. SCOPE
1.1 Scope. This drawing documents the general requirements of a high performance Fixed-Point Digital Signal Processor
microcircuit, with an operating temperature range of -40C to +100C.
1.2 Vendor Item Drawing Administrative Control Number. The manufacturer’s PIN is the item of identification. The vendor item
drawing establishes an administrative control number for identifying the item on the engineering documentation:
V62/04610
-
Drawing
number
1.2.1 Device type(s).
01
X
E
Device type
(See 1.2.1)
Case outline
(See 1.2.2)
Lead finish
(See 1.2.3)
1/
Device type
Generic
01
Circuit function
SM320VC5416-EP
Fixed Point Digital Signal Processor
1.2.2 Case outline(s). The case outlines are as specified herein.
Outline letter
Number of pins
Package style
X
Y
144
144
Plastic ball grid array
Plastic quad flatpack
1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer:
Finish designator
A
B
C
D
E
Z
1.3 Absolute maximum ratings.
Material
Hot solder dip
Tin-lead plate
Gold plate
Palladium
Gold flash palladium
Other
2/ 3/
Supply voltage I/O range, (DVDD) .............................................................................................
Supply voltage core range, (CVDD) ...........................................................................................
Input voltage range, (VI) ...........................................................................................................
Output voltage range (VO) .......................................................................................................
Operating case temperature ranges, (TC): (Extended) .............................................................
Storage temperature range, (TSTG)............................................................................................
1/
2/
3/
-0.3 V to +4.0 V
-0.3 V to +2.0 V
-0.3 V to +4.5 V
-0.3 V to +4.0 V
-40C to +100C
-55C to +150C
Users are cautioned to review the manufacturers data manual for additional user information relating to this device.
Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability. All voltage values are with respect to DVSS.
Long term high temperature storage and/or extended use at maximum recommended operating conditions may result in a
reduction of overall device life. See manufacturer data for additional information on enhanced plastic packaging.
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1.4 Recommended operating conditions.
Device supply voltage, I/O (DVDD) .............................................................................. +2.7 V to +3.6 V
Device supply voltage, core (CVDD) (VC5416-160) .................................................... +1.55 V to +1.65 V
Device supply voltage, core (CVDD) (VC5416-120) .................................................... +1.42 V to +1.65 V
Supply voltage, GND (CVSS, DVSS) ............................................................................ 0 V
High level input voltage, I/O (VIH):
4/ (DVDD = 2.7 V to 3.6 V) .................................................................................. 2.4 V to DVDD + 0.3 V
All other inputs ...................................................................................................... 2.0 V to DVDD + 0.3 V
Low level input voltage, I/O (VIL): ................................................................................ -0.3 V to +0.8 V
Maximum high level output current, (IOH) ................................................................... -8 mA 5/
Maximum low level output current, (IOL) ..................................................................... 8 mA 5/
Operating case temperature (TC) ............................................................................... -40C to +100C
Junction to air (RJA)
Case X ................................................................................................................ +38C/W
Case Y ................................................................................................................ +56C/W
Junction to case (RJC)
Case X ................................................................................................................ +5C/W
Case Y ................................................................................................................ +5C/W
2. APPLICABLE DOCUMENTS
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JEP95
–
Registered and Standard Outlines for Semiconductor Devices
(Copies of these documents are available online at http:/www.jedec.org or from JEDEC – Solid State Technology Association, 3103
North 10th Street, Suite 240–S, Arlington, VA 22201.)
4/
5/
RS , INTn , NMI , X2/CLKIN, CLKMDn, BCLKRn, BCLKXn, HCS , HDS1 , HDS2 , HAS , TRST , BIO , Dn, An, HDn, TCK,
DVDD = 2.7 V to 3.6 V
Note that maximum output currents are DC values only. Transient currents may exceed these values.
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3. REQUIREMENTS
3.1 Marking. Parts shall be permanently and legibly marked with the manufacturer’s part number as shown in 6.3 herein and as
follows:
A.
B.
C.
Manufacturer’s name, CAGE code, or logo
Pin 1 identifier
ESDS identification (optional)
3.2 Unit container. The unit container shall be marked with the manufacturer’s part number and with items A and C (if applicable)
above.
3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are
as specified in 1.3, 1.4, and table I herein.
3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein.
3.5 Diagrams.
3.5.1
Case outline(s). The case outline(s) shall be as shown in 1.2.2 and figure 1.
3.5.2
.
3.5.3
Terminal connections. The terminal connections shall be as shown in figure 2
Block diagram. The block diagram shall be as specified in figure 3.
3.5.4
Load circuit. The load circuit shall be as specified in figure 4.
3.5.5
Timing waveforms. The timing waveforms shall be as shown in figure 5-24.
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TABLE I. Electrical performance characteristics.
Test
Symbol
High level output voltage
2/
VOH
Low level output voltage
2/
VOL
Test condition
-40C  TC  +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
DVDD = 2.7 to 3.0 V, IOH = Max
2.2
DVDD = 3.0 to 3.6 V, IOH = Max
2.4
Max
V
IOL = Max
0.4
V
A
-40
40
TRST , HPI16
-10
800
HPIENA
With internal pull down, RS = 0
-10
400
TMS, TCK, TDI, HPI
II
3/
With internal pull ups
A[17:0], D[15:0], HD[7:0]
Bus holder enabled, DVDD = Max
7/
-400
10
-275
275
All other input only pins
-5
IDDC
CVDD = 1.6 V, fx = 160,
TC = 25C
Supply current .pins
IDDP
DVDD = 3.0 V, fx = 160 MHz,
TC = 25C
PLL x 1 mode, 20 MHz input
2 Typ
IDD
TC = 25C
1 Typ
TC = 100C
30 Typ
IDLE2
IDLE3 Divide by two
mode, CLKIN stopped
Input capacitance
CI
Output capacitance
CO
Input clock frequency
4/,
5
Supply current, core CPU
Supply current, standby
Unit
With internal pull down
X2/CLKIN
Input current
(VI = DVSS to DVDD)
1/
4/,
60 Typ
5/
mA
40 Typ
6/
mA
mA
5 Typ
pF
5 Typ
fx
10
8/
20
pF
9/
MHz
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Min
Unit
Max
CLOCK OPTION
Divide by 2 and divide by 4 clock options timing requirements 10/ 11/
Cycle time, X2/CLKIN
tc(CI)
See figure 5
20
ns
Fall time, X2/CLKIN
tf(CI)
4
Rise time, X2/CLKIN
tr(CI)
4
Pulse duration, X2/CLKIN low
tW(CIL)
4
Pulse duration, X2/CLKIN high
tW(CIH)
4
Divide by 2 and divide by 4 clock options switching characteristics
Cycle time, CLKOUT
10/ 11/
tc(CO)
Delay time, X2/CLKIN high/low to CLKOUT high/low
See figure 5
6.25
td(CI-CO)
12/
13/
4
ns
11
Fall time, CLKOUT
tf(CO)
1 Typ
Rise time, CLKOUT
tr(CO)
1 Typ
Pulse duration , CLKOUT low
tW(COL)
H-2
H-1
Pulse duration , CLKOUT high
tW(COH)
H-2
H-1
20
200
20
100
20
50
MULTIPLY BY N CLOCK OPTION (PLL ENABLED)
Multiply by N clock option timing requirements 11/
Integer PLL multiplier N (N = 1-15)
Cycle time,
X2/CLKIN
PLL multiplier N = x.5
14/
PLL multiplier N = x.25, x.75
See figure 6
tc(CI)
14/
14/
Fall time, X2/CLKIN
tf(CI)
4
Rise time, X2/CLKIN
tr(CI)
4
Pulse duration, X2/CLKIN low
tW(CIL)
4
Pulse duration, X2/CLKIN high
tW(CIH)
4
Multiply by N clock option switching characteristics
ns
11/
Cycle time, CLKOUT
Delay time, X2/CLKIN high/low to CLKOUT high/low
tc(CO)
See figure 6
6.25
td(CI-CO)
ns
4
11
Fall time, CLKOUT
tf(CO)
2 Typ
Rise time, CLKOUT
tr(CO)
2 Typ
Pulse duration , CLKOUT low
tW(COL)
H-2
H-1
Pulse duration , CLKOUT high
tW(COH)
H-2
H-1
Transitory phase, PLL lock up time
tp
s
30
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Unit
Min
Max
MEMORY AND PARALLEL I/O INTERFACE TIMING
Memory read timing requirements
12/
Access time, read data access from address valid, first read
access 16/
ta(A)M1
Access time, read data access from address valid,
consecutive read accesses 16/
ta(A)M2
Setup time, read data valid before CLKOUT low
tsu(D)R
7
Hold time, read data valid after CLKOUT low
th(D)R
0
Memory read switching characteristics
12/
Delay time, CLKOUT low to address valid
16/
td(CLKL-A)
See figure 7
4H-9
2H-9
See figure 7
-1
4
Delay time, CLKOUT low to MSTRB low
td(CLKL-MSL)
-1
4
Delay time, CLKOUT low to MSTRB high
td(CLKL-MSH)
0
4
-1
4
Memory write switching characteristics
12/
Delay time, CLKOUT low to address valid
16/
td(CLKL-A)
See figure 8
tsu(A)MSL
2H-3
td(CLKL-D)W
-1
4
Setup time, data valid before MSTRB high
tsu(D)MSH
2H-5
2H+6
Hold time, data valid after MSTRB high
th(D)MSH
2H-5
2H+6
Delay time, CLKOUT low to MSTRB low
td(CLKL-MSL)
-1
4
tw(SL)MS
2H-3.2
td(CLKL-MSH)
0
Setup time, address valid before MSTRB low
16/
Delay time, CLKOUT low to data valid
Pulse duration, MSTRB low
Delay time, CLKOUT low to MSTRB high
I/O read timing requirements
ns
ns
ns
4
17/
Access time, read data access from address valid, first read
access 16/
ta(A)M1
Setup time, read data valid before CLKOUT low
tsu(D)R
7
Hold time, read data valid after CLKOUT low
th(D)R
0
I/O read switching characteristics
See figure 9
4H-9
ns
-1
4
ns
4
4
17/
Delay time, CLKOUT low to address valid
16/
td(CLKL-A)
See figure 9
Delay time, CLKOUT low to IOSTRB low
td(CLKL-IOSL)
-1
Delay time, CLKOUT low to IOSTRB high
td(CLKL-IOSH)
0
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Unit
Min
Max
-1
4
MEMORY AND PARALLEL I/O INTERFACE TIMING – CONTINUED
I/O write switching characteristics 17/
Delay time, CLKOUT low to address valid
16/
td(CLKL-A)
See figure 10
tsu(A)IOSL
2H-3
Delay time, CLKOUT low to write data valid
td(CLKL-D)W
-1
4
Setup time, data valid before IOSTRB high
tsu(D)IOSH
2H-5
2H+6
Hold time, data valid after IOSTRB high
th(D)IOSH
2H-5
2H+6
Delay time, CLKOUT low to IOSTRB low
td(CLKL-IOSL)
-1
4
tw(SL)IOS
2H-2
td(CLKL-IOSH)
0
Setup time, address valid before IOSTRB low
16/
Pulse duration, IOSTRB low
Delay time, CLKOUT low to IOSTRB high
ns
4
READY TIMING FOR EXTERNAL GENERATED WAIT STATES
Ready timing requirements for external generated wait states 11/ 18/
Setup time, READY before CLKOUT low
tsu(RDY)
Hold time, READY after CLKOUT low
th(RDY)
See figure 11-12
19/
tv(RDY)MSTRB
Hold time, READY after MSTRB low
19/
th(RDY)MSTRB
Valid time, READY after IOSTRB low
19/
tv(RDY)IOSTRB
Hold time, READY after IOSTRB low
19/
th(RDY)IOSTRB
td(MSCL)
Delay time, CLKOUT low to MSC high
td(MSCH)
ns
0
Valid time, READY after MSTRB low
Delay time, CLKOUT low to MSC low
7
4H-6.2
4H
4H-6
4H
See figure 11-12
0
4
0
4
ns
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Unit
Min
Max
HOLD AND HOLDA TIMINGS
HOLD and HOLDA timing requirements
11/
tw(HOLD)
Pulse duration, HOLD low duration
Setup time, HOLD before CLKOUT low
4H+8
tsu(HOLD)
20/
HOLD and HOLDA switching characteristics
See figure 13
ns
7
11/
Disable time, Address, PS , DS , IS high impedance from
CLKOUT low
tdis(CLKL-A)
See figure 13
3
Disable time, R/ W high impedance from CLKOUT low
tdis(CLKL-RW)
3
Disable time, MSTRB , IOSTRB high impedance from
CLKOUT low
tdis(CLKL-S)
3
Enable time, Address, PS , DS , IS valid from CLKOUT low
ten(CLKL-A)
2H+3
ten(CLKL-RW)
2H+3
Enable time, R/ W enabled from CLKOUT low
Enable time, MSTRB , IOSTRB enabled from CLKOUT low
ten(CLKL-S)
Valid time, HOLD low after CLKOUT low
tv(HOLDA)
Valid time, HOLDA low after CLKOUT low
Pulse duration, HOLDA low duration
tw(HOLDA)
2
2H+3
-1
4
-1
4
ns
2H-3
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
RESET, BIO , INTERRUPT, AND MP/ MC TIMINGS
Reset, BIO interrupt, and MP/ MC timing requirements
Hold time, RS after CLKOUT low
Hold time, BIO after CLKOUT low
11/
th(RS)
20/
20/
Hold time, INTn , NMI after CLKOUT low
20/ 21/
See figure 14
2
th(BIO)
4
th(INT)
0
ns
th(MPMC)
4
tw(RSL)
4H+3
Pulse duration, BIO low, synchronous
tw(BIO)S
2H+3
Pulse duration, BIO low, asynchronous
tw(BIO)A
4H
Pulse duration, INTn , NMI high (synchronous)
tw(INTH)S
2H+2
Pulse duration, INTn , NMI high (asynchronous)
tw(INTH)A
4H
Pulse duration, INTn , NMI low (synchronous)
tw(INTL)S
2H+2
Pulse duration, INTn , NMI low (asynchronous)
tw(INTL)A
4H
tw(INTL)WKP
7
20/ 24/
tsu(RS)
3
20/
tsu(BIO)
7
tsu(INT)
7
tsu(MPMC)
5
Hold time, MP/ MC after CLKOUT low
Pulse duration, RS low
20/
22/ 23/
Pulse duration, INTn , NMI low for IDLE2/IDLE3 wakeup
Setup time, RS before X2/CLKIN low
Setup time, BIO before CLKOUT low
Setup time, INTn , NMI , RS before CLKOUT low
Setup time, MP/ MC before CLKOUT low
20/
20/
INSTRUCTION ACQUISITION ( IAQ ) AND INTERRUPT ACKNOWLEDGE ( IACK ) TIMINGS
Instruction acquisition ( IAQ ) and interrupt acknowledge ( IACK ) switching characteristics
11/
-1
4
td(CLKL-IAQH)
-1
4
Delay time, CLKOUT low to IACK low
td(CLKL-IACKL)
-1.2
4
Delay time, CLKOUT low to IACK high
td(CLKL-IACKH)
-1
4
td(CLKL-A)
-1
4
Pulse duration, IAQ low
tw(IAQL)
2H-2
Pulse duration, IACK low
tw(IACKL)
2H-3
Delay time, CLKOUT low to IAQ low
td(CLKL-IAQL)
Delay time, CLKOUT low to IAQ high
Delay time, CLKOUT low to address valid
See figure 15
ns
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Unit
Min
Max
-1
4
-1
4
EXTERNAL FLAG (XF) AND TOUT TIMINGS
External flag (XF) and TOUT switching characteristics 11/
Delay time, CLKOUT low to XF high
td(XF)
Delay time, CLKOUT low to XF low
See figure 16
Delay time, CLKOUT low to TOUT high
td(TOUTH)
-1
4
Delay time, CLKOUT low to TOUT low
td(TOUTL)
-1
4
Pulse duration, TOUT
tw(TOUT)
2H-4
ns
MULTICHANNEL BUFFERED SERIAL PORT (McBSP) TIMING
McBSP transmit and receive timing requirements 25/
Cycle time, BCLKR/X
26/
Pulse duration, BCLKR/X high or BCLKR/X low
tc(BCKRX)
26/
Setup time, external BFSR high before BCLKR low
See figure 17
tw(BCKRX)
tsu(BFRH-BCKRL)
Hold time, external BFSR high after BCLKR low
th(BCKRL-BFRH)
Setup time, BDR valid before BCKR low
tsu(BDRV-BCKRL)
Hold time, BDR valid after BCKR low
th(BCKRL-BDRV)
Setup time, external BFSR high before BCLKX low
tsu(BFXH-BCKXL)
Hold time, external BFSR high after BCLKX low
th(BCKXL-BFXH)
BCLKR/X ext
4P
27/
BCLKR/X ext
2P-1 27/
BCLKR int
8
BCLKR ext
1
BCLKR int
1
BCLKR ext
2
BCLKR int
7
BCLKR ext
1
BCLKR int
2
BCLKR ext
3
BCLKR int
8
BCLKR ext
1
BCLKR int
0
BCLKR ext
2
ns
Rise time, BCKR/X
tr(BCKRX)
BCLKR/X ext
6
Fall time, BCKR/X
tf(BCKRX)
BCLKR/X ext
6
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
MULTICHANNEL BUFFERED SERIAL PORT (McBSP) TIMING
McBSP transmit and receive switching characteristics 25/
Cycle time, BCLKR/X
26/
Pulse duration, BCLKR/X high
Pulse duration, BCLKR/X low
tc(BCKRX)
26/
26/
Delay time, BCLKR high to internal BFSR valid
BCLKR/X int
4P 27/
tw(BCKRXH)
BCLKR/X int
D-1 28/
D+1 28/
tw(BCKRXL)
BCLKR/X int
C-1 28/
C+1 28/
-3
3
td(BCKXH-BFXV)
Disable time, BCLKX high to BDX high impedance
following last data bit of transfer
td(BCKXH-BDXHZ)
DXENA = 0
BCLKR int
td(BCKRH-BFRV)
Delay time, BCLKX high to internal BFSX valid
Delay time, BCLKX high to
BDX valid
See figure 17
tdis(BCKXH-BDXV)
DXENA = 0
Delay time, BFSX high to BDX valid
Only applies when in data delay 0
(XDATDLY = 00b) mode
td(BFXH-BDXV)
ns
BCLKR ext
0
11
BCLKR int
-1
5
BCLKR ext
3
11
BCLKR int
6
BCLKR ext
10
BCLKR int
-1 29/
10
BCLKR ext
3
20
BCLKR int
-1 29/
20
BCLKR ext
2.8
30
BCLKR int
-1.2 29/
7
BCLKR ext
3
11
McBSP GENERAL PURPOSE I/O TIMING
McBSP general purpose I/O timing requirements
Setup time, BGPIOx input mode before CLKOUT
high 30/
tsu(BGPIO-COH)
Hold time, BGPIOx input mode after CLKOUT high
30/
th(COH-BGPIO)
See figure 18
7
ns
0
McBSP general purpose I/O switching characteristics
Delay time, CLKOUT high to BGPIOx output mode
31/
td(COH-BGPIO)
See figure 18
-2
4
ns
See notes at end of table.
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PAGE
12
TABLE I. Electrical performance characteristics - Continued.
Test
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
1/
Limits
Unit
Master
Min
Slave
Max
Min
Max
McBSP GENERAL PURPOSE I/O TIMING – CONTINUED
McBSP as SPI Master or Slave timing requirements (CLKSTP = 10b, CLKXP = 0) 32/
Setup time, BDR valid before BCLKX low
tsu(BDRV-BCKXL)
Hold time, BDR valid after BCLKX low
th(BCKXL-BDRV)
See figure 19
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 10b, CLKXP = 0)
Hold time, BFSX low after BCLKX low
33/
th(BCKXL-BFXL)
Delay time, BFSX low to BCLKX high
34/
2.2-6P 27/
4
5+12P 27/
T+4
td(BFXL-BCKXH)
C-4
C+3
td(BCKXH-BDXV)
-4
5
Disable time, BDX high impedance following
last data bit from BCLKX low
tdis(BCKXL-
C-2
C+3
Disable time, BDX high impedance following
last data bit from BFSX high
tdis(BFXH-
Delay time, BFSX low to BDX valid
Setup time, BDR valid before BCLKX low
tsu(BDRV-BCKXL)
Hold time, BDR valid after BCLKX high
th(BCKXH-BDRV)
34/
Delay time, BCLKX low to BDX valid
Disable time, BDX high impedance following
last data bit from BCLKX low
Delay time, BFSX low to BDX valid
10P+17
27/
2P-4 27/
6P+17
27/
4P+2 27/
8P+17
27/
32/
See figure 19
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 11b, CLKXP = 0)
Delay time, BFSX low to BCLKX high
6P+2 27/
BDXHZ)
McBSP as SPI Master or Slave timing requirements (CLKSTP = 11b, CLKXP = 0)
33/
ns
BDXHZ)
td(BFXL-BDXV)
Hold time, BFSX low after BCLKX low
ns
32/
T-3
Delay time, BCLKX high to BDX valid
See figure 19
12
th(BCKXL-BFXL)
See figure 19
12
2.2-6P 27/
4
5+12P 27/
ns
32/
C-3
C+4
ns
td(BFXL-BCKXH)
T-4
T+3
td(BCKXL-BDXV)
-4
5
6P+2 27/
10P+17
27/
tdis(BCKXL-
-2
4
6P-4 27/
10P+17
27/
D-2
D+4
4P+2 27/
8P+17
27/
BDXHZ)
td(BFXL-BDXV)
See notes at end of table.
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13
TABLE I. Electrical performance characteristics - Continued.
Test
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
1/
Limits
Unit
Master
Min
Slave
Max
Min
Max
McBSP GENERAL PURPOSE I/O TIMING – CONTINUED
McBSP as SPI Master or Slave timing requirements (CLKSTP = 10b, CLKXP = 1) 32/
Setup time, BDR valid before BCLKX high
tsu(BDRV-BCKXH)
Hold time, BDR valid after BCLKX high
th(BCKXH-BDRV)
See figure 20
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 10b, CLKXP = 1)
Hold time, BFSX low after BCLKX high
5+12P 27/
D-4
D+3
td(BCKXL-BDXV)
-4
5
Disable time, BDX high impedance following
last data bit from BCLKX high
tdis(BCKXH-
D-2
D+3
Disable time, BDX high impedance following
last data bit from BFSX high
tdis(BFXH-
Delay time, BFSX low to BDX valid
Setup time, BDR valid before BCLKX low
tsu(BDRV-BCKXL)
Hold time, BDR valid after BCLKX low
th(BCKXL-BDRV)
34/
Delay time, BCLKX high to BDX valid
Disable time, BDX high impedance following
last data bit from BCLKX high
Delay time, BFSX low to BDX valid
10P+17
27/
2P-4 27/
6P+17
27/
4P+2 27/
8P+17
27/
32/
See figure 20
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 11b, CLKXP = 1)
Delay time, BFSX low to BCLKX low
6P+2 27/
BDXHZ)
td(BFXL-BDXV)
33/
ns
BDXHZ)
McBSP as SPI Master or Slave timing requirements (CLKSTP = 11b, CLKXP = 1)
Hold time, BFSX low after BCLKX high
ns
32/
td(BFXL-BCKXL)
Delay time, BCLKX low to BDX valid
See figure 20
4
T+4
34/
th(BCKXH-BFXL)
2-6P 27/
T-3
Delay time, BFSX low to BCLKX low
33/
12
th(BCKXH-BFXL)
See figure 20
12
2-6P 27/
4
5+12P 27/
ns
32/
D-3
D+4
ns
td(BFXL-BCKXL)
T-4
T+3
td(BCKXH-BDXV)
-4
5
6P+2 27/
10P+17
27/
tdis(BCKXH-
-2
4
6P-4 27/
10P+17
27/
C-2
C+4
4P+2 27/
8P+17
27/
BDXHZ)
td(BFXL-BDXV)
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
Test
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Min
Unit
Max
HOST PORT INTERFACE TIMING
HP18 mode timing requirements
Setup time, HBIL valid before DS low (when HAS is not
tsu(HBV-DSL)
See figure 21-22
6
ns
used), or HBIL valid before HAS low
th(DSL-HBV)
3
tsu(HSL-DSL)
8
Pulse duration, DS low
tw(DSL)
13
Pulse duration, DS high
tw(DSH)
7
Setup time, HD valid before DS high, HPI write
tsu(HDV-DSH)
3
Hold time, HD valid after DS high, HPI write
th(DSH-HDV)W
2
Setup time, HDx input valid before CLKOUT high, HDx
configured as general purpose input
tsu(GPIO-COH)
6
Hold time, HDx input valid before CLKOUT high, HDx
configured as general purpose input
th(GPIO-COH)
0
Hold time, HBIL valid after DS low (when HAS is not
used), or HBIL valid after HAS low
Setup time, HAS low before DS low
See notes at end of table.
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15
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
HOST PORT INTERFACE TIMING - CONTINUED
HP18 mode switching characteristics
Enable time, HD driven from DS low
ten(DSL-HD)
See figure 21-22
0
10
Delay time, DS
low to HD valid for
first byte of an HPI
read
Case 1b: Memory accesses when DMAC is active
in 32 bit mode and tw(DSH)  36 P 35/
10
td(DSL-HDV1)
Case 1c: Memory accesses when DMAC is active
in 16 bit mode and tw(DSH) < 18P 35/
18P+38/
Case 1d: Memory accesses when DMAC is active
in 16 bit mode and tw(DSH)  18P 35/
10
Case 2a: Memory accesses when DMAC is
inactive and tw(DSH) < 10P 35/
10P+38/
Case 2b: Memory accesses when DMAC is
inactive and tw(DSH)  10P 35/
10
Case 3: Register accesses
10
Delay time, DS low to HD valid for second byte of an HPI read
td(DSL-HDV2)
Hold time, HD valid after DS high, for a HPI read
th(DSH-HDV)R
Valid time, HD valid after HRDY high
tv(HYH-HDV)
Delay time, DS high to HRDY low
td(DSH-HYL)
Delay time, DS
high to HRDY high
36/
ns
36P+38/
Case 1a: Memory accesses when DMAC is active
in 32 bit mode and tw(DSH) < 36 P 35/
36/
10
0
2
8
18P+6
Case 1a: Memory accesses when DMAC is active
in 16 bit mode 35/
Case 1b: Memory accesses when DMAC is active
in 32 bit mode 35/
36P+6
td(DSH-HYH)
Case 2: Memory accesses when DMAC is
inactive
35/
Case 3: Write accesses to HPIC register
10P+6
37/
6P+6
Delay time, HCS low/high to HRDY low/high
td(HCS-HRDY)
6
Delay time, CLKOUT high to HRDY high
td(COH-HYH)
9
Delay time, CLKOUT high to HINT change
td(COH-HTX)
6
Delay time, CLKOUT high to HDx output change. HDx is configured as
a general purpose output
td(COH-GPIO)
5
See notes at end of table.
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16
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
HOST PORT INTERFACE TIMING - CONTINUED
HP16 mode timing requirements
Setup time, HR/ W valid before DS falling edge
tsu(HBV-DSL)
6
Hold time, HR/ W valid after DS falling edge
th(DSL-HBV)
5
Setup time, address valid before DS rising edge (write)
tsu(HAV-DSH)
5
Setup time, address valid before DS falling edge (read)
tsu(HAV-DSL)
-(4P-6)
Hold time, address valid after DS rising edge.
th(DSH-HAV)
1
Pulse duration, DS low
tw(DSL)
30
Pulse duration, DS high
tw(DSH)
10
Cycle time, DS
rising edge to next
DS rising edge
ns
Memory accesses with no
DMA activity
Reads
10P+30
Writes
10P+10
Memory accesses with 16 bit
DMA activity
Reads
Writes
16P+10
Memory accesses with 32 bit
DMA activity
Reads
24P+30
Writes
24P+10
tc(DSH-DSH)
16P+30
Setup time, HD valid before DS rising edge
tsu(HDV-DSH)W
8
Hold time, HD valid after DS rising edge, write
th(DSH-HDV)W
2
See notes at end of table.
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17
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
1/
Test condition
-40C  TC +100C
1.55 V  CVDD  1.65 V
2.7 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
HOST PORT INTERFACE TIMING - CONTINUED
HP18 mode switching characteristics
Delay time, DS low to HD driven
Delay time, DS
low to HD valid for
first word of an
HPI read
Delay time, DS
high to HRDY high
td(DSL-HDD)
See figure 21-22
0
10
Case 1b: Memory accesses not immediately
following a write when DMAC is active in 32 bit
mode
ns
48P+39/
Case 1a: Memory accesses initiated immediately
following a write when DMAC is active in 32 bit
mode and tw(DSH) < 26 P
24P+20
td(DSL-HDV1)
Case 1c: Memory accesses initiated immediately
following a write when DMAC is active in 16 bit
mode and tw(DSH) < 18P
32P+39/
Case 1d: Memory accesses not immediately
following a write when DMAC is active in 16 bit
mode
16P+20
Case 2a: Memory accesses initiated immediately
following a write when DMAC is inactive and
tw(DSH) < 10P
20P+39/
Case 2b: Memory accesses not immediately
following a write when DMAC is inactive
10P+20
Memory writes when no DMA is active
10P+5
Memory writes with one or more 16 bit DMA
channels active
td(DSH-HYH)
16P+5
Memory writes with one or more 32 bit DMA
channels active
24P+5
Valid time, HD valid after HRDY high
tv(HYH-HDV)
Hold time, HD valid after DS rising edge, read
td(DSH-HDV)R
7
Delay time, CLKOUT rising edge to HRDY high
td(COH-HYH)
5
Delay time, DS low to HRDY low
td(DSL-HYL)
12
Delay time, DS low to HRDY low
td(DSH-HYL)
12
1
6
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
1/
1/
Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over
the specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters
may not necessarily be tested. In the absence of specific parametric testing, product performance is assured by
characterization and/or design.
2/
All input and output voltage level except RS , INT 0 - INT 3 , NMI , X2/CLKIN, CLKMD1-CLKMD3, BCLKRn, BCLKXn, HCS ,
3/
4/
5/
6/
7/
8/
9/
10/
HAS , HDS1 , HDS2 , BIO , TCK, , TRST , Dn, An, HDn are LVTTL compatible.
HPI input signals except for HPIENA and HPI16, when HPIENA = 0.
Clock mode: PLL x 1 with external source.
This value was obtained with 50% usage of MAC and 50% usage of NOP instructions. Actual operating current varies with
program being executed.
This value was obtained with single cycle external writes, CLKOFF = 0 and load = 15 pF. For more details on how this
calculation is performed refer to the manufacturer data TMS320LC54x Power Dissipation application report (literature number
SPRA164).
VIL(MIN)  VI  VIL(MAX) or VIH(MIN)  VI  VIH(MAX).
This device utilizes a fully static design and therefore can operate with tc(CI) approaching .
It is recommended that the PLL multiply by N clocking option be used for maximum frequency operation.
Clock mode pin settings for the divide by 2 and by divide by 4 clock options
CLKMD1
11/
12/
13/
14/
CLKMD1
CLKMD1
CLOCK MODE
0
0
0
½, PLL disabled
1
0
1
1/4, PLL disabled
1
1
1
½, PLL disabled
H = 0.5tc(CO).
It is recommended that the PLL clocking option to be used for maximum frequency operation.
This device utilizes a fully static design and therefore can operate with tc(CI) approaching .
N is the multiplication factor.
15/
MSTRB = 0 and H = 0.5tc(CO).
16/
Address, R/ W , PS , DS , and IS timing are all included in timing referenced as address.
17/
18/
IOSTRB = 0 and H = 0.5tc(CO).
The hardware wait states can be used only in conjunction with the software wait states extend the bus cycles. To generate
wait states by READY, at least two software wait states must be programmed. READY is not sampled until the condition of
the internal software wait states.
These timings are included for reference only. The critical timings for READY are those referenced to CLKOUT.
These inputs can be driven from an asynchronous source, therefore, there are no specific timing requirements with respect to
CLKOUT, however, if this timing is met, the input will recognized on the CLKOUT edge referenced.
19/
20/
21/
The external interrupts ( INT 0 - INT 3 , NMI ) are synchronized to the core CPU by way of a two flip-flop synchronizer that
samples these inputs with consecutive falling edges of CLKOUT. The input to interrupt pins is required to represent a 1-0-0
sequence at the timing that is corresponding to three CLKOUTs sampling sequence.
22/
If the PLL mode is selected, then at power on sequence, or at wakeup from IDLE3, RS must be held low for at least 50 s to
ensure synchronization and lock in of the PLL.
23/
24/
Note that RS may cause a change in clock frequency, therefore changing the value of H.
The diagram assumes clock mode is divide by 2 and the CLKOUT divide factor is set to no divide mode (DIVFCT = 00 field in
the BSCR).
CLKRP = CLKXP = FSRP = FSXP = 0. If the polarity of any signals is inverted, then the timing references of that signal are
also inverted.
25/
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TABLE I. Electrical performance characteristics - Continued.
26/
27/
28/
29/
30/
31/
32/
33/
34/
35/
1/
Note that in some cases, for example when driving another 54x device McBSP, maximum serial port clocking rates may not
be achievable at maximum CPU clock frequency due to transmitted data timings and corresponding receive timing
requirements. A separate detailed timing analysis should be performed for each specific McBSP interface.
P = 1/(2 * processor clock).
T = BCLKRX period = (1 + CLKGDV) * 2P
C = BCLKRX low pulse width = T/2 when CLKGDV is odd or zero and = (CLKGDV/2) * 2P when CLKGDV is even
D = BCLKRX high pulse width = T/2 when CLKGDV is odd or zero and = (CLKGDV/2 + 1) * 2P when CLKGDV is even.
Minimum delay times also represent minimum output hold times.
BGPIOx refers to BCLKRx, BFSRx, BDRx, BCLKXx, or BFSXx when configure as a general purpose input.
BGPIOx refers to BCLKRx, BFSRx, BCLKXx, BFSXx, or BDRx when configure as a general purpose output.
For all SPI slave modes, CLKG is programmed as ½ of the CPU clock by setting CLKSM = CLKGDV = 1.
FSRP = FSXP = 1. As a SPI master, BFSX is inverted to provide active low slave enable output. As a slave, the active low
signal input on BFSX and BFSR is inverted before being used internally.
CLKXM = BFXM = 1, CLKRM = FSRM = 0 for master McBSP
CLKXM = CLKRM = FSXM = FSRM = 0 for slave McBSP.
BFSX should be low before the rising edge of clock to enable slave devices and then begin a SPI transfer at the rising edge
of the master (BCLKX).
DMAC stands for direct memory access controller (DMAC). The HP18 shares the internal DMA bus with the DMAC, thus
HP18 access times are affected by DMAC activity.
36/
The HRDY output is always high when HCS input is high, regardless of DS timings.
37/
This timing applies when writing a one to the DSPINT bit or HINT bit of the HPIC register. All other writes to the HPIC occur
asynchronously, and do not cause HRDY to be deasserted.
10-tw(DSH)
20- tw(DSH)
38/
39/
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Case X
Symbol
Millimeters
Min
Max
A1
0.85
0.95
A2
0.35
0.45
b
0.45
0.55
D/E
11.90
12.10
A
Notes:
1.
2.
1.40
D1/E1
9.60 Typ
e
0.80 Typ
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
FIGURE 1. Case outlines.
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Case Y
Symbol
A
A1
A2
b
c
Notes:
1.
2.
3.
Dimensions
Millimeters
Symbol
Min
Max
1.60
1.35
1.45
0.05
0.17
0.27
0.13 Nom
D/E
D1/E1
D2/E2
e
L
Millimeters
Min
Max
21.80
22.20
19.80
20.20
17.50 Typ
0.50 Typ
0.45
0.75
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Falls within JEDEC MO-136
FIGURE 1. Case outlines - Continued.
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Case X
Pin No.
Signal Name
Pin No.
Signal Name
Pin No.
Signal Name
Pin No.
Signal Name
A1
CVSS
B1
A22
C1
DVDD
D1
A12
A2
A21
B2
DVSS
C2
CVSS
D2
A11
A3
A8
B3
A9
C3
CVDD
D3
HD7
A4
A5
B4
A6
C4
A7
D4
A10
A5
A2
B5
A3
C5
HD6
D5
A4
A6
HDS2
B6
DVDD
C6
A0
D6
A1
A7
CVSS
B7
CVDD
C7
HDS1
D7
DVSS
A8
HD5
B8
D15
C8
D14
D8
D13
A9
HD4
B9
D12
C9
D11
D9
D10
A10
D9
B10
D8
C10
D7
D10
D6
A11
DVDD
B11
CVSS
C11
DVSS
D11
D4
A12
A20
B12
A18
C12
A16
D12
D3
A13
A19
B13
A17
C13
D5
D13
D2
E1
CVDD
F1
CVDD
G1
HR/ W
H1
DS
E2
A15
F2
CVSS
G2
HCS
H2
IS
E3
A14
F3
DVSS
G3
READY
H3
R/ W
E4
A13
F4
HAS
G4
PS
H4
MSTRB
E10
D1
F10
X1
G10
HPIENA
H10
TDO
E11
D0
F11
HD3
G11
CVDD
H11
TDI
E12
RS
F12
CLKOUT
G12
TMS
H12
TRST
E13
X2/CLKIN
F13
DVSS
G13
CVSS
H13
TCK
J1
IOSTRB
J3
XF
J10
HD2
J12
EMU0
J2
MCS
J4
HOLDA
J11
TOUT
J13
EMU1/ OFF
K1
IAQ
L1
MP/ MC
M1
BDR1
N1
CVSS
K2
HOLD
L2
DVDD
M2
BFSR1
N2
BCLKR1
K3
BIO
L3
CVSS
M3
HCNTL0
N3
DVSS
K4
BCLKR0
L4
BCLKR2
M4
BFSR0
N4
BFSR0
K5
BDR0
L5
HCNTL1
M5
BDR2
N5
BCLKX0
K6
BCLKX2
L6
CVSS
M6
N6
CVDD
N7
BFSX2
N8
DVSS
IACK
K7
DVDD
L7
HRDY
M7
HINT
BFSX0
K8
BDX2
L8
BDX0
M8
HD0
HBIL
N9
INT2
HD1
N10
INT1
N11
CVDD
K9
INT0
L9
NMI
M9
K10
CLKMD1
L10
INT 3
M10
K11
CLKMD2
L11
CVSS
M11
K12
CLKMD3
L12
DVDD
M12
DVSS
N12
BCLKX1
K13
HPI16
L13
DVSS
M13
BDX1
N13
BFSX1
DVDD is the power supply for the I/O pins while CVDD is the power supply for the core CPU.
FIGURE 2. Terminal connections.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
23
Case Y
Pin No.
Signal Name
Pin No.
Signal Name
Pin No.
Signal Name
Pin No.
Signal Name
1
CVSS
37
CVSS
73
BFSX1
109
A19
2
A22
38
BCLKR1
74
BDX1
110
A20
3
CVSS
39
HCNTL0
75
DVDD
111
CVSS
4
DVDD
40
DVSS
76
DVSS
112
DVDD
5
A10
41
BCLKR0
77
CLKMD1
113
D6
6
HD7
42
BCLKR2
78
CLKMD2
114
D7
7
A11
43
BFSR0
79
CLKMD3
115
D8
8
A12
44
BFSR2
80
HPI16
116
D9
9
A13
45
BDR0
81
HD2
117
D10
10
A14
46
HCNTL1
82
TOUT
118
D11
11
A15
47
BDR2
83
EMU0
119
D12
12
CVDD
48
BCLKX0
84
EMU1/ OFF
120
HD4
13
HAS
49
BCLKX2
85
TDO
121
D13
14
DVSS
50
CVSS
86
TDI
122
D14
15
CVSS
51
TRST
123
D15
CVDD
52
HINT
CVDD
87
16
88
TCK
124
HD5
17
HCS
53
BFSX0
89
TMS
125
CVDD
18
HR/ W
READY
54
BFSX2
90
CVSS
126
CVSS
55
HRDY
91
CVDD
127
HDS1
20
PS
56
DVDD
92
HPIENA
128
DVSS
21
DS
57
DVSS
93
DVSS
129
HDS2
22
IS
58
HD0
94
CLKOUT
130
DVDD
23
R/ W
59
BDX0
95
HD3
131
A0
24
MSTRB
60
BDX2
96
X1
132
A1
25
19
IOSTB
61
IACK
97
X2/CLKIN
133
A2
26
MCS
62
HBIL
98
RS
134
A3
27
XF
63
NMI
99
D0
135
HD6
28
HOLDA
64
INT 0
100
D1
136
A4
29
IAQ
65
INT1
101
D2
137
A5
30
HOLD
66
INT2
102
D3
138
A6
31
BIO
67
INT 3
103
D4
139
A7
32
MP/ MC
68
CVDD
104
D5
140
A8
33
DVDD
69
HD1
105
A16
141
A9
34
CVSS
70
CVSS
106
DVSS
142
CVDD
35
BDR1
71
BCLKX1
107
A17
143
A21
36
BFSR1
72
DVSS
108
A18
144
DVSS
DVDD is the power supply for the I/O pins while CVDD is the power supply for the core CPU. VSS is the ground for both I/O pins
and the core CPU
FIGURE 2. Terminal connections - Continued.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
24
FIGURE 3. Block diagram.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
25
Where:
IOL
IOH
VLoad
CT
= 1.5 mA (all outputs)
= 300 A (all outputs)
= 1.5 V
= 20 pF typical load circuit capacitance.
FIGURE 4. Load circuit.
Note:
1.
The CLKOUT timing in this diagram assumes the CLKOUT divide factor (DIVFCT field in the BSCR) is configured as 00
(CLKOUT not divided). DIVFCT is configured as CLKOUT divided by 4 mode following reset.
FIGURE 5. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
26
Note:
1.
The CLKOUT timing in this diagram assumes the CLKOUT divide factor (DIVFCT field in the BSCR) is configured as 00
(CLKOUT not divided). DIVFCT is configured as CLKOUT divided by 4 mode following reset.
FIGURE 6. Timing waveforms.
Note
1.
Address, R/ W , PS , DS , and IS timing are included in timings referenced as address.
FIGURE 7. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
27
Note
1.
Address, R/ W , PS , DS , and IS timing are included in timings referenced as address.
FIGURE 7. Timing waveforms - Continued.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
28
Note
1.
Address, R/ W , PS , DS , and IS timing are included in timings referenced as address.
FIGURE 8. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
29
Note
1.
Address, R/ W , PS , DS , and IS timing are included in timings referenced as address.
FIGURE 9. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
30
Note
1.
Address, R/ W , PS , DS , and IS timing are included in timings referenced as address.
FIGURE 10. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
31
FIGURE 11. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
32
FIGURE 12. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
33
FIGURE 13. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
34
FIGURE 14. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
35
FIGURE 15. Timing waveforms.
FIGURE 16. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
36
FIGURE 17. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
37
Note:
1. BGPIOx refers to BCLKRx, BFSRx, BDRx, BCLKXx, or BFSXx when configured as a general purpose input.
2. BGPIOx refers to BCLKRx, BFSRx, BCLKXx, BFSXx, or BDRx when configured as a general purpose output.
FIGURE 18. Timing waveforms.
FIGURE 19. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
38
FIGURE 20. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
39
Note:
1.
HAD refers to HCNTL0, HCNTL1, and HR/ W .
2.
When HAS is not used ( HAS always high).
FIGURE 21. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
40
Note:
1. GPIOx refers to HD0, HD1, HD2, ….HD7, when the HD bus is configured for general purpose input/output (I/O).
FIGURE 22. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
41
FIGURE 23. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
42
FIGURE 24. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
43
4. VERIFICATION
4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and test requirements as
indicated in their internal documentation. Such procedures should include proper handling of electrostatic sensitive devices,
classification, packaging, and labeling of moisture sensitive devices, as applicable.
5. PREPARATION FOR DELIVERY
5.1 Packaging. Preservation, packaging, labeling, and marking shall be in accordance with the manufacturer’s standard commercial
practices for electrostatic discharge sensitive devices.
6. NOTES
6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum.
6.2 Configuration control. The data contained herein is based on the salient characteristics of the device manufacturer’s data book.
The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided.
6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supply herein is not to be construed as a guarantee
of present or continued availability as a source of supply for the item.
1/
Vendor item drawing administrative
control number 1/
Device manufacturer
CAGE code
Vendor part number
V62/04610-01XA
01295
SM320VC5416GGU16EP
V62/04610-01YE
01295
SM320VC5416PGE16EP
The vendor item drawing establishes an administrative control number for identifying the item on
the engineering documentation.
CAGE code
01295
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
Source of supply
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
SIZE
A
CODE IDENT NO.
16236
REV
B
DWG NO.
V62/04610
PAGE
44