IRF IRGIH50F

PD -90930B
IRGIH50F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
C
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
VCES = 1200V
VCE(on) max =2.9V
G
@VGE = 15V, IC = 25A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
TO-259AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
1200
45
25
180
90
±20
200
80
-55 to + 150
V
A
V
W
°C
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
g
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.625
0.21 —
—
30
Test Conditions
°C/W
For footnotes refer to the last page
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02/18/02
IRGIH50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 –––
Emitter-to-Collector Breakdown Voltage ➂ 22 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
1.1
––– 2.1
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– 2.5
––– 2.4
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -14
gfe
Forward Transconductance T
7.5 –––
–––
–––
ICES
Zero Gate Voltage Collector Current
––– –––
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
V(BR)ECS
Max. Units
Conditions
–––
V
VGE = 0V, IC = 100 µA
–––
V
VGE = 0V, IC = 1.0 A
––– V/°C VGE = 0V, IC = 1.0 mA
VGE = 15V
2.9
IC = 25A
–––
IC = 45A
See Fig.2, 5
V
–––
IC = 25A , TJ = 125°C
5.5
VCE = VGE, IC = 250 µA
––– mV/°C VCE = VGE, IC = 250 µA
–––
S
VCE = 100V, IC = 25A
100
VGE = 0V, VCE = 960V
µA
1200
VGE = 0V, VCE = 960V, TJ = 125°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LC+LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
1.4
4.5
5.9
33
15
590
500
13
6.8
Max. Units
Conditions
100
IC = 25A
21
nC VCC = 400V
See Fig. 8 ➄
43
VGE = 15V
68
IC = 25A, VCC = 400V
26
VGE = 15V, RG = 2.35Ω
➄
ns
480
Energy losses include "tail"
330
See Fig. 9, 10, 14
–––
mJ
–––
8.2
–––
TJ = 125°C
–––
IC = 25A, VCC = 400V
ns
➄
–––
VGE = 15V, RG = 2.35Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 11, 14
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 2400 –––
VGE = 0V
––– 140 –––
pF
VCC = 30V
See Fig. 7
––– 28 –––
ƒ = 1.0MHz
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
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IRGIH50F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRGIH50F
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGIH50F
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRGIH50F
125°C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
Fig. 12 - Turn-Off SOA
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IRGIH50F
L
D .U .T.
VC *
50V
RL =
0 - 960V
1 00 0V
960V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 960V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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IRGIH50F
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
T Pulse width 5.0µs, single shot.
max. junction temperature.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω
➄ Equipment limitation.
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Case Outline and Dimensions — TO-259AA
LEGEND
1 = COLLECTOR
2 = EMITTER
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
8
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