RH1021-10 Precision 10V Reference DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1021-10 is a precision 10V reference with ultralow drift and noise, extremely good long-term stability and almost total immunity to input voltage variations. The reference output will source and sink up to 10mA. This reference can also be used as a shunt regulator (2-terminal Zener). Unique circuit design makes the RH1021-10 the first IC reference to offer ultralow drift without the use of high power on-chip heaters. Input Voltage.............................................................40V Input/Output Voltage Differential ...............................35V Output to Ground Voltage (Shunt Mode Current Limit)..................................16V Trim Pin to Ground Voltage Positive ................................................ Equal to VOUT Negative ..............................................................–20V Output Short-Circuit Duration VIN = 35V ......................................................... 10 sec VIN ≤ 20V .................................................... Indefinite Operating Temperature Range................ –55°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec) .................. 300°C (Note 10) The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringentmilitary applications. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. BURN-IN CIRCUITS 8 7 1 20V 2 20V 6 RH1021-10 –20V 5 3 4 1 10 2 9 3 8 4 7 5 6 –20V PACKAGE/ORDER INFORMATION ORDER PART NUMBER TOP VIEW NC* 8 NC* 1 7 NC* 6 VOUT VIN 2 5 TRIM NC* 3 4 GND H PACKAGE 8-LEAD TO-5 METAL CAN *CONNECTED INTERNALLY, DO NOT CONNECT EXTERNAL CIRCUITRY TO THESE PINS. RH1021BMH-10 RH1021CMH-10 RH1021DMH-10 ORDER PART NUMBER TOP VIEW NC* 1 10 NC* VIN 2 9 NC* NC* 3 8 VOUT GND 4 7 TRIM NC 5 6 NC RH1021CMW-10 W PACKAGE 10-LEAD CERPAC * CONNECTED INTERNALLY, DO NOT CONNECT EXTERNAL CIRCUITRY TO THESE PINS. rh102110fe 1 RH1021-10 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN 9.995 9.95 (Preirradiation) (Note 9) –55°C ≤ TA ≤ 125°C SUBTA = 25°C SUBTYP MAX GROUP MIN TYP MAX GROUP VOUT Output Voltage RH1021CM-10 RH1021BM-10, DM-10 1 1 10.005 10.05 TCVOUT Output Voltage Temperature Coefficient RH1021BM-10 RH1021CM-10, DM-10 2 2 ΔVOUT ΔVIN Line Regulation 11.5V ≤ VIN ≤ 14.5V 14.5V ≤ VIN ≤ 40V 3 3 4 2 ΔVOUT ΔIOUT Load Regulation (Sourcing Current) 0 ≤ IOUT ≤ 10mA 3 Load Regulation (Shunt Mode) 1.7mA ≤ IOUT ≤ 10mA 3, 4 1 1 UNITS V V 5 20 2, 3 2, 3 ppm/°C ppm/°C 1 1 6 4 2, 3 2, 3 ppm/V ppm/V 25 1 40 2, 3 ppm/mA 100 1 150 2, 3 ppm/mA IS Supply Current (Series Mode) 1.7 1 2.0 2, 3 mA IMIN Minimum Current (Shunt Mode) VIN is Open 1.5 1 1.7 2, 3 mA 6 4 Output Voltage Noise Long-Term Stability of VOUT 0.1Hz ≤ f ≤ 10Hz 10Hz ≤ f ≤ 1kHz 5 5 6 ΔT = 1000 Hrs Noncumulative 6 15 ppm 5 ppm Temperature Hysteresis of VOUT ΔT = ±25°C TABLE 1: ELECTRICAL CHARACTERISTICS 10Krad(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX (Postirradiation) (Note 7) 20Krad(Si) MIN μVP-P μVRMS MAX 50Krad(Si) MIN MAX 100Krad(Si) 200Krad(Si) MIN MIN MAX MAX 9.992 10.008 9.99 10.01 9.987 10.013 9.985 10.015 9.98 10.02 9.95 10.05 9.945 10.055 9.942 10.06 9.938 10.06 9.935 10.065 UNITS VOUT Output Voltage RH1021CM-10 RH1021BM-10, DM-10 1 1 V V TCVOUT Output Voltage Temperature Coefficient RH1021BM-10 RH1021CM-10, DM-10 2 2 5 20 5 20 5 20 7 22 10 25 ppm/°C ppm/°C ΔVOUT ΔVIN Line Regulation 11.5V ≤ VIN ≤ 14.5V 14.5V ≤ VIN ≤ 40V 3 3 4 2 4 2 4.5 2 5 2 6 3 ppm/V ppm/V ΔVOUT ΔIOUT Load Regulation (Sourcing Current) 0 ≤ IOUT ≤ 10mA 3, 8 25 25 25 25 25 ppm/mA Load Regulation (Shunt Mode) 1.7mA ≤ IOUT ≤ 10mA 3, 4 100 100 100 100 150 ppm/mA IMIN Minimum Current (Shunt Mode) VIN is Open 1.5 1.5 1.5 1.5 1.5 mA IS Supply Current (Series Mode) 1.7 1.7 1.7 1.7 1.7 mA rh102110fe 2 RH1021-10 TABLE 1A: ELECTRICAL CHARACTERISTICS Note 1: Output voltage is measured immediately after turn-on. Changes due to chip warm-up are typically less than 0.005%. Note 2: Temperature coefficient is measured by dividing the change inoutput voltage over the temperature range by the change in temperature. Separate tests are done for hot and cold; TMIN to 25°C and 25°C to TMAX. Incremental slope is also measured at 25°C. Note 3: Line and load regulation are measured on a pulse basis. Output changes due to die temperature change must be taken into account separately. Package thermal resistance is 150°C/W for the TO-5 (H) package and 170°C/W for the 10-lead flatpack (W) package. Note 4: Shunt mode regulation is measured with the input open. With the input connected, shunt mode current can be reduced to 0mA. Load regulation will remain the same. Note 5: RMS noise is measured with a 2-pole highpass filter at 10Hz and a 2-pole lowpass filter at 1kHz. The resulting output is full wave rectified and then integrated for a fixed period, making the final reading an average as opposed to RMS. Correction factors are used to convert from average to RMS and to correct for the nonideal bandpass of the filters. Peak-topeak noise is measured with a single highpass filter at 0.1Hz and a 2-pole lowpass filter at 10Hz. The unit is enclosed in a still-air environment to eliminate thermocouple effects on the leads. Test time is 10 seconds. Note 6: Consult factory for units with long term stability data. Note 7: VIN = 15V, IOUT = 0, TA = 25°C, unless otherwise noted. Note 8: IOUT(MAX) (Sourcing) is 5mA for exposures greater than 100Krad (Si). Note 9: VIN = 15V, IOUT = 0, unless otherwise noted. Note 10: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. SUBGROUP Final Electrical Test Requirements (Method 5004) 1*, 2, 3, 4 Group A Test Requirements (Method 5005) 1, 2, 3, 4 Group B and D for Class S and Group C and D for Class B End Point Electrical Parameters (Method 5005) 1, 2, 3 *PDA Applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 15V VIN 0.1μF GND –15V rh102110fe Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH1021-10 TYPICAL PERFORMANCE CHARACTERISTICS Load Regulation (Shunt Mode) Output Voltage 10.01 60 10.00 9.99 1 10 100 TOTAL DOSE Krad (Si) 40 30 20 10 0 1000 VIN = OPEN 1.2mA ≤ IOUT ≤ 10mA 50 Line Regulation 10 100 TOTAL DOSE Krad (Si) 8 NOTE 8 1 1000 10 100 TOTAL DOSE Krad (Si) 11.5V ≤ VIN ≤ 14.5V –1.0 –1.5 Minimum Current (Shunt Mode) 1.2 VIN = 15V VIN = OPEN 10 1.1 5 0 –5 1.0 0.9 0.8 0.7 –10 –15 1000 1000 RH1021-10 G03 MINIMUM CURRENT (mA) TEMPERATURE COEFFICIENT (ppm/°C) 14.5V ≤ VIN ≤ 40V 10 100 TOTAL DOSE Krad (Si) 10 Temperature Coefficient 0.5 1 12 4 1 15 –0.5 14 RH1021-10 G02 1.0 0 VIN = 15V 0mA ≤ IOUT ≤ 10mA 16 6 RH1021-10 G01 LINE REGULATION (ppm/V) LOAD REGULATION (ppm/mA) LOAD REGULATION (ppm/mA) OUTPUT VOLTAGE (V) VIN = 15V IOUT = 0 –2.0 Load Regulation (Sourcing) 18 1 RH1021-10 G04 10 100 TOTAL DOSE Krad (Si) 1000 RH1021-10 G05 0.6 1 10 100 TOTAL DOSE Krad (Si) 1000 RH1021-10 G06 I.D. No. 66-10-0179 Rev. E 0508 rh102110fe 4 Linear Technology Corporation LT 0508 REV E • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1990