RH1013M Dual Precision Operational Amplifier U W W W U DESCRIPTIO ABSOLUTE The RH1013M is the first precision dual operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM158/MC1558/OP-221 pin configuration. Low offset voltage (300µV max), low drift (≤2.5µV/°C), low offset current (≤1.5nA), and high gain (1.2 million min) combine to make the RH1013M two truly precision amplifers in one package. Supply Voltage ..................................................... ±22V Differential Input Voltage ...................................... ±30V Input Voltage .............. Equal to Positive Supply Voltage ................................ 5V Below Negative Supply Voltage Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range .............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. U U BUR -I CIRCUIT 100Ω AXI U RATI GS , LTC and LT are registered trademarks of Linear Technology Corporation. TOTAL DOSE BIAS CIRCUIT 50k 10k 20V 15V – RH1013M 10k 8V 50k + –20V RH1013M BI –15V RH1013M TDBC U W U PACKAGE/ORDER I FOR ATIO TOP VIEW V+ TOP VIEW TOP VIEW 8 7 OUT B OUT A 1 –IN A 2 +IN A 3 6 –IN B 4 V – (CASE) 5 +IN B H PACKAGE 8-LEAD TO-5 METAL CAN V+ OUT A 1 10 –IN A 2 9 OUT B +IN A 3 8 –IN B 6 –IN B NC 4 7 +IN B 5 +IN B V– 5 6 NC OUT A 1 8 V+ –IN A 2 7 OUT B +IN A 3 V– 4 J8 PACKAGE 8-LEAD CERAMIC DIP W PACKAGE 10-LEAD CERPAC 1 RH1013M TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) VS = ±15V, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER VOS CONDITIONS NOTES MIN TA = 25°C TYP MAX Input Offset Voltage 2 SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP 300 1 550 2,3 µV 450 1 750 3 µV 750 2 µV VCM = 0.1V ∆VOS ∆Temp Average Tempco of Offset Voltage ∆VOS ∆Time Long Term VOS Stability IOS Input Offset Current IB en 1 µV/°C 2.5 µV/Mo 0.5 10 1 20 2,3 nA 2 10 1 20 2,3 nA 30 1 45 2,3 nA 2 50 1 120 2,3 nA Input Bias Current Input Noise Voltage UNITS 0.1Hz to 10Hz µVP-P 0.55 Input Noise Voltage f O = 10Hz 24 nV/√Hz Density f O = 1000Hz 22 nV/√Hz in Input Noise Current Density f O = 10Hz 0.07 pA/√Hz RIN Input Resistance Differential 1 70 Common Mode AVOL Large-Signal Voltage Gain 4 VO = ±10V, RL ≥ 2k 1.2 4 0.5 4 Input Voltage Range 2 13.5 V –15.0 V 3.5 V 0 V Ratio VCM = 13V, –14.9V Power Supply Rejection Ratio VS = ±2V to ±18V 100 1 Channel Separation VO = ±10V, RL = 2k 120 1 Slew Rate IS Supply Current 97 RL ≥ 2k 1 ±12.5 4 dB 94 2,3 dB 97 2,3 dB dB ±11.5 5,6 V Output Low, No Load 2 25 4 Output Low, 600Ω to GND 2 10 4 Output Low, ISINK = 1mA 2 350 4 mV Output High, No Load 2 4.0 4 V Output High, 600Ω to GND 2 3.4 4 0.2 Per Amplifier 2 2 V/µV VCM = 13.5V, –15V SR V/µV V/µV 1 Common-Mode Rejection Output Voltage Swing 5,6 1 1,2 VOUT 0.25 1 1,2 PSRR GΩ VO = ±10V, RL ≥ 600Ω VO = 5mV to 4V, RL = 500Ω CMRR MΩ mV 18 3.1 5,6 5,6 4 mV V V/µs 0.55 1 0.70 2,3 mA 0.50 1 0.65 2,3 mA RH1013M TABLE 1A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS CONDITIONS 10KRAD(Si) NOTES MIN MAX 20KRAD(Si) MIN MAX 50KRAD(Si) MIN MAX 100KRAD(Si) MIN MAX 450 450 600 750 600 600 750 900 10 10 15 20 10 10 15 20 60 75 100 175 80 100 125 200 Input Ofset Voltage 2 IOS Input Offset Current 2 IB Input Bias Current 2 Input Voltage Range Common-Mode Rejection VCM = 13V, – 15V Ratio PSRR Power Supply Rejection Ratio AVOL Large-Signal Voltage Gain RL ≥ 10k, VO = ±10V VOUT Maximum Output Voltage RL ≥ 10k Swing 900 µV µV 25 nA nA 250 nA nA 1 13.5 13.5 13.5 13.5 13.5 V 1 –15.0 –15.0 – 15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 2 CMRR 200KRAD(Si) MIN MAX UNITS VS = ±10V to ±18V 0 0 0 0 97 97 94 90 100 98 94 86 V V 86 dB 80 dB V/mV 500 200 100 50 25 ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V SR Slew Rate RL ≥ 10k IS Supply Current Per Amplifier 0.6 0.8 0.13 2 Note 1: Guaranteed by design, characterization, or correlation to other tested parameters.. 0.12 1.0 0.11 1.6 0.07 V 0.01 0.55 0.55 0.55 0.55 0.50 0.50 0.50 0.50 V/µs 0.55 mA mA Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V. U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. 1,2,3 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 3 RH1013M U W TYPICAL PERFOR A CE CHARACTERISTICS Positive Slew Rate Supply Current (Per Amplifier) 0.8 0.8 VS = ±15V RL = 10k 0.6 0.4 0.2 VS = ±15V RL = 10k NEGATIVE SLEW RATE (V/µs) VS = ±15V RL = 10k POSITIVE SLEW RATE (V/µs) SUPPLY CURRENT (mA) Negative Slew Rate 0.8 0.6 0.4 0.2 0 0.6 0.4 0.2 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 0 10 100 TOTAL DOSE KRAD (Si) 1 RH1013M G01 10 100 TOTAL DOSE KRAD (Si) 1 RH1013M G02 Input Offset Voltage 70 VS = ±15V VCM = 0V VS = ±15V VCM = 0V 60 INPUT BIAS CURRENT (nA) 200 100 0 –100 –200 50 40 30 20 10 –300 1 10 100 TOTAL DOSE KRAD (Si) 0 1000 1 10 100 TOTAL DOSE KRAD (Si) RH1013M G04 Input Offset Current Open-Loop Gain 150 VS = ±15V VCM = 0V VS = ±15V RL = 10k VOUT = ±10V 140 2 OPEN-LOOP GAIN (dB) INPUT OFFSET CURRENT (nA) 1000 RH1013M G05 3 1 0 130 120 110 100 –1 90 –2 80 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1013M G06 4 1 1000 RH1013M G03 Input Bias Current 300 INPUT OFFSET VOLTAGE (µV) 1000 10 100 TOTAL DOSE KRAD (Si) 1000 RH1013M G07 RH1013M U W TYPICAL PERFOR A CE CHARACTERISTICS Power Supply Rejection Ratio Common-Mode Rejection Ratio 140 VS = ±15V –15V ≤ VCM ≤ 13.5V 140 POWER SUPPLY REJECTION RATIO (dB) COMMON-MODE REJECTION RATIO (dB) 150 130 120 110 100 90 VS = ±10V TO ±18V 130 120 110 100 90 80 70 80 1 10 100 TOTAL DOSE KRAD (Si) 10 100 TOTAL DOSE KRAD (Si) 1 1000 RH1013M G09 RH1013M G08 Input Noise Voltage Density Gain Bandwidth Product 1000 100 VS = ±15V fO = 10Hz 90 GAIN BANDWIDTH PRODUCT (kHz) INPUT NOISE VOLTAGE DENSITY (nV/√Hz) 1000 80 70 60 50 40 30 20 VS = ±5V RL = 10k 900 800 700 600 500 400 300 200 100 10 0 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 1 10 100 TOTAL DOSE KRAD (Si) RH1013M G10 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1000 RH1013M G11 5 RH1013M Rad Hard This table provides example specifications for our Rad Hard products. For complete Rad Hard data sheets, contact 1-800-4-LINEAR. DEVICE SYMBOL 10Krad (Si) MIN MAX CONDITIONS 20Krad (Si) MIN MAX 50Krad (Si) MIN MAX 80Krad (Si) MIN MAX 100Krad (Si) MIN MAX 200Krad (Si) MIN MAX UNITS PACKAGE OPTIONS RH07 VOS IOS 90 2.8 150 4 200 8 250 12 300 20 µV nA J8, H RH27C VOS IOS 100 75 130 75 180 90 280 120 400 180 µV nA H, W RH37C VOS IOS 100 75 130 75 180 90 280 120 400 180 µV nA H, W RH101A VOS IOS 2 10 2 10 2 10 2 10 3 20 mV nA H, W RH108A VOS IOS 0.5 0.2 0.5 0.2 0.5 0.2 mV nA H, W RH117 VREF V H, K RH118 VOS SR 10 mV V/µs H, W 8 500 mV nA H, J, W 7.2 20 30 60 V ppm/°C ppm/°C ppm/°C H RH119 VOS IOS RH129 VZ ∆VZ/∆TEMP 3V ≤ (VIN – VOUT) ≤ 40V 10mA ≤ IOUT ≤ IMAX, P ≤ PMAX 1.20 1.30 1.20 4 VS = ±15V, AV = 1 50 6.7 ⏐VIN – VOUT⏐ ≤ 5V, IOUT = 10mA 3V ≤ ⏐VIN – VOUT⏐ ≤ 40 V 10mA ≤ IOUT ≤ IMAX, P ≤ PMAX 7.2 10 20 50 1.20 4 50 4 75 RH129A RH129B RH129C 1.30 1.30 4 7.2 10 20 50 RH1009 VZ ∆VZ/∆IZ RH1011 VOS IOS 1.5 4 1.5 4 1.5 4 RH1013 VOS IOS 450 10 450 10 RH1014 VOS IOS 450 10 450 10 RH1021-5 VOUT RH1021-7 RH1021-10 VOUT TCVOUT VOUT TCVOUT 7.2 15 25 55 6.7 –1.225 –1.275 –1.22 –1.2 –1.3 –1.2 –1.23 –1.3 V V K, H 2.495 2.495 2.505 12 V mV H 1.5 20 2 50 mV nA H, J8, W 600 15 750 20 900 25 µV nA H, J8, W 600 15 750 20 900 25 µV nA J, W 5.005 4.993 5.055 4.942 5 20 5.007 5.058 5 20 4.9925 5.008 4.99 4.94 5.06 4.935 7 22 5.01 5.065 10 25 V V ppm/°C ppm/°C H 7.05 5 20 7.05 5 20 7.07 10 25 V ppm/°C ppm/°C H V V ppm/°C ppm/°C H µV pA H, W 6.95 RH1021CM-10 RH1021BM-10, DM-10 RH1021BM-10 RH1021CM-10, DM-10 6.7 –1.225 –1.275 –1.225 –1.275 –1.225 –1.275 –1.2 –1.3 –1.2 –1.3 –1.2 –1.3 2.505 2.495 6 4.9975 5.0025 4.995 4.95 5.05 4.945 5 20 RH1021BM-7 RH1021DM-7 50 4 300 7.2 10 20 50 VREF TCVOUT 4 4 150 6.7 1.30 50 RH137 RH1021CM-5 RH1021BM-5, DM-5 RH1021BM-5 RH1021CM-5, DM-5 1.20 50 4 100 6.7 1.0 0.2 7.05 5 20 6.95 2.505 2.495 6 6.95 2.505 8 6.94 9.995 10.005 9.99 10.01 9.987 10.013 9.95 10.05 9.945 10.055 9.942 10.06 5 5 5 20 20 20 2.505 2.495 10 7.06 7 22 6.93 9.985 10.015 9.98 10.02 9.98 10.06 9.935 10.065 7 10 22 25 RH1056A VOS IOS 180 ±10 180 ±50 250 ±150 RH1078 VOS 350 500 650 75k 800 1000 µV H, J8, W IOS 2 18 13 75k 18 23 nA J, W 1.258 1.257 1.253 1.247 1.241 V H, K 1.271 1.269 1.265 1.260 1.253 V 1.5 1.51 1.52 1.55 1.575 V RH1086 VREF Dropout V IOUT = 10mA 10mA ≤ IOUT ≤ IFULL LOAD 1.5V ≤ (VIN – VOUT) ≤ 15V ∆VREF = 1%, IOUT = 1.5A (K) ∆VREF = 1%, IOUT = 0.5A (H) 450 ±250 450 ±350 I.D. No. 66-11-1013 Rev. E 0103 6 Linear Technology Corporation LT/LT 0103 500 REV E • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1990