VISHAY SI3863BDV

Specification Comparison
Vishay Siliconix
Si3863BDV vs. Si3863DV
Description:
Package:
Pin Out:
Load Switch with Level-Shift
TSOP-6
Identical
Part Number Replacements:
Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3
Si3863BDV-T1-E3 Replaces Si3863DV-T1
Summary of Performance:
The Si3863BDV is an upgrade to the original Si3863DV; both parts perform identically, including limits to the parametric tables
below.
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si3863BDV
Si3863DV
Unit
Input Voltage
ON/OFF Voltage
Load Current
Continuous
Pulsed
Continuous Intrinsic Diode Conduction
Power Dissipation
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
VIN
12
12
VON/OFF
8
8
IL
+2.5
+5
+2.5
+5
IS
-1
-1
V
A
PD
0.83
0.83
Tj & Tstg
-55 to 150
-55 to 150
W
°C
RthJA
150
150
°C/W
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristic
Symbol
Reverse Leakage Current
IFL
Diode Forward Voltage
VSD
Min
Si3863BDV
Typ
Max
Min
Si3863DV
Typ
Max
1
Unit
1
uA
-0.75
-1
V
0.086
12
0.105
nC
Ω
0.105
0.105
0.125
Ω
0.140
0.135
0.165
-0.75
-1
0.057
12
0.075
0.082
0.110
Dynamic
Input Voltage Range
VIN
2.5
VIN = 4.5 V
On-Resistance (p-channel) @ 1A
VIN = 3.0 V
rDS(on)
1
1
Ω
A
1
1
A
VIN = 2.5 V
On-State (p-channel) Drain-Current
Document Number 74118
27-May-05
VIN = 10 V
VIN = 5 V
ID(on)
2.5
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