Specification Comparison Vishay Siliconix Si5404BDC vs. Si5404DC Description: N-Channel, 2.5-V (G-S) MOSFET Package: 1206-8 ChipFETr Pin Out: Identical Part Number Replacements: Si5404BDC-T1 Replaces Si5404DC-T1 Si5404BDC-T1—E3 (Lead (Pb)-Free version) Replaces Si5404DC-T1—E3 Summary of Performance: The Si5404BDC is the replacement for the original Si5404DC; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Si5404BDC Si5404DC Unit Drain-Source Voltage VDS 20 20 Gate-Source Voltage VGS "12 "12 7.5 7.2 5.4 5.2 IDM 20 20 IS 2.1 2.1 2.5 2.5 1.3 1.3 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 50 50 _C/W Continuous Drain Current TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25_C Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient ID PD V A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si5404BDC Parameter Symbol Min VGS(th) 0.6 Typ Si5404DC Max Min 1.5 0.6 Typ Max Unit "100 nA 1 mA Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current Drain Source On Drain-Source On-Resistance Resistance IDSS VGS = 4.5 V VGS = 4.5 V VGS = 2.5 V Forward Transconductance Diode Forward Voltage ID(on) rDS(on) DS( ) V "100 1 20 20 A 0.022 0.028 0.016 0.019 0.031 0.039 0.038 0.045 gfs 26 20 VSD 0.7 0.8 1.2 12 18 W S V Dynamic Total Gate Charge Qg 7 Gate-Source Charge Qgs 1.7 11 2.4 Gate-Drain Charge Qgd 2 3.2 Gate Resistance Rg 1.7 NS* td(on) 12 20 20 30 tr 12 20 40 60 td(off) 25 40 40 60 tf 10 20 15 23 trr 20 40 30 60 nC W Switching Turn-On Time Turn Off Time Turn-Off Source-Drain Reverse Recovery Time ns *NS denotes parameter not specified in original data sheet. Document Number: 73275 05-Jan-05 www.vishay.com 1