Final Product/Process Change Notification Document # : FPCN20886 Issue Date: 29 April 2015 Title of Change: SOD-123 devices Cu wire qualification at ON Semiconductor, Leshan, China facility. Proposed first ship date: 5 August 2015 Contact information: Contact your local ON Semiconductor Sales Office or <[email protected] > Samples: Contact your local ON Semiconductor Sales Office Additional Reliability Data: Contact your local ON Semiconductor Sales Office or <[email protected] > Type of notification: This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. Change Part Identification: At the expiration of this FPCN devices will be assembled with Cu Wire at ON Semiconductor’s existing Leshan facility. Devices with Cu Wire will have date code of WW31, 2015 or later. Change category(s): Wafer Fab Change Assembly Change Test Change Sites Affected: All site(s) not applicable ON Semiconductor site(s) : External Foundry/Subcon site(s): Manufacturing Site Change/Addition Manufacturing Process Change Material Change Site 1 Product specific change Datasheet/Product Doc change Shipping/Packaging/Marking Other: _______________________ Site 2 ON Leshan, China Description and Purpose: ON Semiconductor is pleased to announce the completion of Cu Wire qualification for the impacted devices at ON Semiconductor’s Leshan, China facility. The impacted devices are currently assembled at the ON Semiconductor Leshan, China facility with Au Wire. At the expiration of this PCN, these devices will be built with Cu Wire at the same site. There is no change in package outline or electrical performance of the parts they continue to fully meet datasheet specifications. Reliability Data Summary: Qual vehicle : BAT54T1G Test Interval Results HTRB Tj=150C or operating Tj 80% V bias (JA108) Condition 1008 Hrs 0/231 HTSL Ta=150C, or 175C based on datasheet max TA storage 1008 Hrs 0/231 IOL Ta=+25°C, deltaTj=100°C max, 2min on/off for 15000 cyc 15000 Cycle 0/231 TC Temp = -65°C to +150°C; for 1000 cycles (JA104B) 1000 Cycle 0/231 AC Temp = +121°C; RH =100%, (JA110) 96 Hrs 0/231 H3TRB Temp = +85°C; RH = 85%, 80% V bias (JA101) 1008 Hrs 0/231 RSH TS=260C, Tdwell=10 sec. (Jedec B-106) TEM001092 Rev. D 0/90 Page 1 of 2 Final Product/Process Change Notification Document # : FPCN20886 Issue Date: 29 April 2015 MMSD103T1G Test Condition Interval Results HTRB Tj=150C or operating Tj 80% V bias (JA108) 1008 Hrs 0/231 HTSL Ta=150C, or 175C based on datasheet max TA storage 1008 Hrs 0/231 IOL Ta=+25°C, deltaTj=100°C max, 2min on/off for 15000 cyc 15000Cycle 0/231 TC Temp = -65°C to +150°C; for 1000 cycles (JA104B) 1000 Cycle 0/231 AC Temp = +121°C; RH =100%, (JA110) 96 Hrs 0/231 H3TRB Temp = +85°C; RH = 85%, 80% V bias (JA101) 1008 Hrs 0/231 RSH TS=260C, Tdwell=10 sec. (Jedec B-106) 0/90 Electrical Characteristic Summary: Electrical Characteristics are not impacted. List of Affected Standard Parts: MMSD301T1G MMSD701T1G MMSD4148T3G MMSD4148T1G TEM001092 Rev. D Page 2 of 2