Product Overview

Product Overview
NGB8207AB: Ignition IGBT, N-Channel, 20 A, 365 V
For complete documentation, see the data sheet
Product Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage
and high current switching is required.
Features
•
•
•
•
•
•
•
•
Ideal for Coil-on-Plug and Driver-on-Coil Applications
Gate-Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Gate Resistor (RG) = 70
Applications
End Products
• Ignition Systems
• Automotive
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
NGB8207ABNT4G
AEC Qualified
Active
365
1.75
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
165
No
2
20
PPAP
Capable
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
500
D PA
K-3