Product Overview NGTB45N60S2: IGBT 600 V/45 A - Welding For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 µs Short-Circuit Capability Applications End Products • Inverter Welding • Welder Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) NGTB45N60S2WG Pb-free Active 600 2 0.36 45 1.2 Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) 498 36 135 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 300 Yes TO247