Product Overview

Product Overview
NGTB30N135IHR: IGBT 1350V 30A FS2-RC Induction Heating
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT
is well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Optimized for Low Case Temperature in IH Cooker Applications
• Reliable and Cost Effective Single Die Solution
Applications
• Inductive Heating
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
NGTB30N135IHRWG
Pb-free
Active
1350
2.3
0.85
30
2.1
Eon
Typ
(mJ)
Trr
Typ
(ns)
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
234
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
394
Yes
TO247