Product Overview NGTD13T65F2: IGBT 650V 30A FS2 bare die For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 µs Short Circuit Capability These are Pb-Free Devices Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) NGTD13T65F2SWK Pb-free NEW 650 Limit 1.6 ed by Tj(ma x) 5 NEW 650 Limit 1.6 ed by Tj(ma x) 5 Halide free NGTD13T65F2WP Pb-free Halide free VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode