Product Overview

Product Overview
NGTD30T120F2: IGBT 1200V 40A FS2 bare die
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss.
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 µs Short Circuit Capability
These are Pb-Free Devices
Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
NGTD30T120F2WP
Pb-free
NEW
1200
Halide free
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Limit 2
ed by
Tj(ma
x)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
10
PD
Max
(W)
CoPack
Pack age
aged Type
Diode