Product Overview

Product Overview
NGTB40N60L2: IGBT 600V 40A FS2 Low VCEsat
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
5 s Short-Circuit Capability
Applications
• Motor Drive Inverters
• Industrial Switching
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB40N60L2WG
Pb-free
NEW
600
2
0.28
1.17
73
6.7
228
5
417
Yes
40
2.4
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247