FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 08-July-2004 SUBJECT: ON Semiconductor Final Product/Process Change Notification #13522 TITLE: Final Notification for IPCN 13259, Wafer Capacity Addition for MOS9 Technology, Group 2. EFFECTIVE DATE: 09-SEP-2004 AFFECTED CHANGE CATEGORY(S): Subcontractor Fab Site AFFECTED PRODUCT DIVISION(S): Analog Products & ECL Products ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office. (DON WARRING, [email protected]) SAMPLES: Contact Below Contact your local ON Semiconductor Sales Office. (CLARENCE REBELLO, [email protected]) FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office (CLARENCE REBELLO, [email protected]) DISCLAIMER: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE This is an FPCN for IPCN 13259. ON Semiconductor will be transferring 85% BiCMOS products formerly produced at the Freescale Semiconductor MOS 16 facility to MOS 9 located on the Freescale Semiconductor site in Glasgow, Scotland. MOS9 is an ISO9001 certified facility and currently manufactures the 85% BiCMOS product family. The MOS 9 85% BiCMOS technology is identical to the MOS16 85% BiCMOS technology. This process will provide for improved process consistency and enhanced manufacturing controls. This is the Final PCN for the listed devices. The effective date of this change will be 60 days from the issuance of this PCN for the devices listed. Issue Date: 08-July-2004 Page 1 of 4 Final Product/Process Change Notification #13522 Device parameters will continue to meet all Data Book specifications except as detailed below, and reliability will continue to meet or exceed ON Semiconductor standards. In the course of reviewing the electrical data, Test Methodology improvements indicate prior limits were imprecisely set. The following changes will be made in the Data Sheet: MC100EPT21: - Change IIL Lower Limit at All Temperatures to -150 mA (was 0.5) mA - Change VBB Limits at All Temperatures to 1910 to 2160 (was 1775 to 1975) mV - Change Tplh Limits at -40 deg C to 800 to 2050 (was 1200 to 1800) ps - Change Tphl Limits at 25 deg C to 800 to 2250 (was 1200 to 1800) ps - Change Tplh Limits at 85 deg C to 900 to 2950 (was 1300 to 1900) ps - Change Tphl Lower Limit at All Temperatures to 1100 (was 1200) ps - Change Tr and Tf Lower Limit at all Temperatures to 250 (was 330) ps - Change Jitter RMS Upper Limit at all Temperatures to 5 (was 1) ps, Typical is 3.5 ps. (Continued in Additional Information section) ADDITIONAL INFORMATION NB100ELT23L: - Change ESD HBM Upper Limit to 1500 (was 1200) V - Change ESD MM Upper Limit to 100 (was 150) V - Change IIL Lower Limit at All Temperatures to -150 mA (was 0.5) mA - Change Tplh Limits at -40 deg C and 25 deg C to 1950 to 2950 (was 1500 to 2750) ps - Change Tphl Limits at 85 deg C to 1950 to 3250 (was 1500 to 2750) ps - Change Tr Limits at all Temperatures to 700 to 1650 (was 500 to 1300) ps for 0.8 to 2V - Change tJitter Upper Limit at all Temperatures to 20 (was 1) ps, Typical is 6 ps. Changes reflect typographical errors and Family Specifications, which match MOS16 devices. There were no changes to the actual design or function of the parts. RELIABILITY DATA SUMMARY Below is a summary of the reliability results. A more detailed reliability report is available upon request. Test High Temp Op Life (HTOL) Conditions Tj=150 deg c for 1008 hrs Results 0/231 Preconditioning (PC) MSL1 IR at 240 deg c MSL2 IR at 260 deg c 0/462 0/770 HAST-PC after Preconditioning 130 deg c, 85%.RH 18.8 PSIG for 96 hrs 0/693 Temp Cycling after Preconditioning (TC-PC) -65 to +150 deg c for 1000 cycles 0/693 ESD per JEDEC Std Human Body Model(HBM) Machine Model(MM) Charge Device Model(CDM) 1500V 100V 2000V Reliability Test Conclusions: Reliability test data is consistent with passing ON Semiconductor requirements. Issue Date: 08-July-2004 Page 2 of 4 Final Product/Process Change Notification #13522 ELECTRICAL CHARACTERISTIC SUMMARY Data is available on request. CHANGED PART IDENTIFICATION Product with Date code of ww35 may be manufactured at MOS9. Issue Date: 08-July-2004 Page 3 of 4 Final Product/Process Change Notification #13522 AFFECTED DEVICE LIST: PART MC100EPT21D MC100EPT21DG MC100EPT21DR2 MC100EPT21DT MC100EPT21DTG MC100EPT21DTR2 MC100EPT21DTR2G NB100ELT23LD NB100ELT23LDR2 NB100ELT23LDT NB100ELT23LDTR2 Issue Date: 08-July-2004 Page 4 of 4