FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 19-Dec-2005 SUBJECT: ON Semiconductor Final Product/Process Change Notification #15185 TITLE: Final Notification for Wafer Capacity Addition for MOSAIC5 Technology – Group10 EFFECTIVE DATE: 19-Feb-2006 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site AFFECTED PRODUCT DIVISION(S): Analog Power Division ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Matt Kas <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Clarence Rebello <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: This is the last Final PCN for the listed devices originally notified on IPCN 11335. ON Semiconductor is pleased to announce the Qualification and Process Certification of the COM1 wafer fabrication facility located in Phoenix, Arizona to manufacture MOSAIC5 Bipolar technology products. MOSAIC5 products were previously fabricated in the Motorola MOS6 wafer fabrication facility in Mesa, Arizona. The effective date of this change will be 60 days from the issuance of this PCN for the devices listed. Device parameters will continue to meet Data Book specifications as detailed below. Reliability will continue to meet or exceed ON Semiconductor standards. Issue Date: Dec.19, 2005 Rev.08-24-05 Page 1 of 3 Final Product/Process Change Notification #15185 In the course of reviewing the electrical data for the Group 10 released parts, the following changes will be made: MC100EP16VA: • Change VBB NECL Limits at All Temperatures to -1585 to -1385 mV (was -1550 to -1350 mV at -40°C, -1575 to -1375 mV at 25°C and -1600 to -1400 mV at 85°C). MC100EP16VB: • Change IEE Limits at -40°C to 25 to 45 mA • Change IEE Limits at 25°C to 30 to 50 mA • Change IEE Limits at 85°C to 32 to 52 mA • Change VOH NECL Limits at 25 & 85°C to -1175 to -925 mV (was -1200 to -950 mV at 25°C and 85°C). • Change VBB NECL Limits at All Temperatures to -1570 to -1340 mV (was -1540 to -1340 mV at -40°C, -1580 to -1380 mV at 25°C and -1610 to -1410 mV at 85°C). MC100EP16VC: • Change VOH NECL Limits at All Temperatures to -1175 to -925 mV (was -1195 to -945 mV at -40, 25°C and 85°C). • Change VBB NECL Limits at All Temperatures to -1570 to -1340 mV (was -1575 to -1375 mV at -40°C, -1600 to -1400 mV at 25°C and -1625 to -1425 mV at 85°C). Changes reflect typographical errors and Family Specifications, which match MOS6 devices. There were no changes to the actual design or function of the parts. RELIABILITY DATA SUMMARY: Reliability Test Results: Available Contact your local ON Semiconductor Sales Office or Matt Kas ELECTRICAL CHARACTERISTIC SUMMARY: Electrical characteristic data available upon request. Electrical Performance has not changed. CHANGED PART IDENTIFICATION: Devices with date code of WW05, 2006 and forward may be manufactured in COM1. Issue Date: Dec.19, 2005 Rev.08-24-05 Page 2 of 3 Final Product/Process Change Notification #15185 AFFECTED DEVICE LIST: PART MCW100EP16VA MC100EP16VAD MC100EP16VADG MC100EP16VADR2 MC100EP16VADR2G MC100EP16VADT MC100EP16VADTG MC100EP16VADTR2 MC100EP16VADTR2G MCW100EP16VB MC100EP16VBD MC100EP16VBDG MC100EP16VBDR2 MC100EP16VBDR2G MC100EP16VBDT MC100EP16VBDTG MC100EP16VBDTR2 MC100EP16VBDTR2G MCW100EP16VC MC100EP16VCD MC100EP16VCDG MC100EP16VCDR2 MC100EP16VCDR2G MC100EP16VCDT MC100EP16VCDTG MC100EP16VCDTR2 MC100EP16VCDTR2G Issue Date: Dec.19, 2005 Rev.08-24-05 Page 3 of 3