Product Overview MJ11015: 30 A, 120 V PNP Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices. Features • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc • Monolithic Construction with Built-in Base Emitter Shunt Resistor • Junction Temperature to +200°C Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type MJ11015G Pb-free Active PNP 30 120 3 1 - 4 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-204-2