ON Semiconductor PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 (Min) @ IC – 20 Adc Monolithic Construction with Built–in Base Emitter Shunt Resistor Junction Temperature to +200C *ON Semiconductor Preferred Device 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–120 VOLTS 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol MJ11012 MJ11015 MJ11016 Unit VCEO 60 120 Vdc Collector–Base Voltage VCB 60 120 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current IC 30 Adc Base Current IB 1 Adc Total Device Dissipation @TC = 25C Derate above 25C @ TC = 100C PD 200 1.15 Watts W/C TJ, Tstg –55 to +200 C Operating Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 0.87 C/W TL 275 C COLLECTOR NPN MJ11012 MJ11016 Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes for 10 Seconds. PNP MJ11015 BASE COLLECTOR BASE ≈ 8.0 k ≈ 40 ≈ 8.0 k EMITTER ≈ 40 EMITTER Figure 1. Darlington Circuit Schematic Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 4 1 Publication Order Number: MJ11012/D MJ11015 MJ11012 MJ11016 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristics Symbol Min Max 60 120 — — — — — — 1 1 5 5 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector–Emitter Leakage Current (VCE = 60 Vdc, RBE = 1k ohm) (VCE = 120 Vdc, RBE = 1k ohm) (VCE = 60 Vdc, RBE = 1k ohm, TC = 150C) (VCE = 120 Vdc, RBE = 1k ohm, TC = 150C) V(BR)CEO MJ11012 MJ11015, MJ11016 Vdc ICER MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 5 mAdc Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO — 1 mAdc 1000 200 — — — — 3 4 — — 3.5 5 4 — ON CHARACTERISTICS(1) DC Current Gain (IC = 20 Adc,VCE = 5 Vdc) (IC = 30 Adc, VCE = 5 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) (IC = 30 Adc, IB = 300 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) (IC = 30 A, IB = 300 mAdc) VBE(sat) — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 A, VCE = 3 Vdc, f = 1 MHz) hfe (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 MHz hFE, DC CURRENT GAIN 30 k 20 k PNP MJ11015 NPN MJ11012, MJ11016 10 k 7k 5k 3k 2k 700 500 VCE = 5 Vdc TJ = 25°C 300 0.3 0.5 0.7 hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED MJ11015 MJ11012 MJ11016 2 1 0.5 0.2 0.1 0.05 PNP MJ11015 NPN MJ11012, MJ11016 0.02 0.01 VCE = 3 Vdc IC = 10 mAdc TJ = 25°C 0.005 5 7 10 1 2 3 IC, COLLECTOR CURRENT (AMP) 20 30 10 20 Figure 2. DC Current Gain (1) 5 TJ = 25°C IC/IB = 100 2 VBE(sat) VCE(sat) 1 0 0.1 50 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) 3 0.2 0.5 1 2 500 700 1.0 k Figure 3. Small–Signal Current Gain PNP MJ11015 NPN MJ11012, MJ11016 4 50 70 100 200 300 f, FREQUENCY (kHz) 30 5 10 20 50 100 20 10 5 2 1 0.5 0.2 0.1 0.05 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25°C SECOND BREAKDOWN LIMITATION MJ11012 0.02 0.01 MJ11015, MJ11016 2 IC, COLLECTOR CURRENT (AMP) 3 5 7 10 20 30 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. “On” Voltages (1) Figure 5. Active Region DC Safe Operating Area At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 3 MJ11015 MJ11012 MJ11016 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. 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