Product Overview MJE802: 4.0 A, 80 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices. Features • High DC Current Gain hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages MJE700 and MJE800 series • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type MJE802G Pb-free Active NPN 4 80 2.5 0.75 - - TO-225-3 Active NPN 4 80 2.8 0.75 - - TO-225-3 Halide free MJE803G Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016