INFINEON MIPAQ

MIPAQ™ – More Than you expect!
Infineon’s functional IGBT module family
[ www.infineon.com/mipaq ]
MIPAQ™ family
Applications
The MIPAQ™ modules
enable highly efficient
power inverter designs
to be used in
Industrial drives,
such as compressors,
pumps and fans
■ uninterruptible Power
Supply (uPS)
■ Air conditioning
systems
■ Solar inverters
The modules are characterized by enhanced
testing and are delivered
as known-good systems.
■
MIPAQ™ IS A neW funCTIOnAl product family and dedicated to useful integration of electronics into power modules.
The MIPAQ™ fAMIly was developed in order to offer Modules Integrating
Power, Application and Quality. It is a functional product family within Infineon‘s
IGBT modules portfolio. The combination of an IGBT module and the integration
of sensing and driving electronics leads to an optimized solution in mastering
the challenge of designing powerful and compact inverters for low and medium
power at low costs, contributing to energy savings to improve profitability and
protect our environment at the same time.
The MIPAQ™ fAMIly includes three products and offers significant board
space savings.
■
■
■
MIPAQ™ base
MIPAQ™ sense
MIPAQ™ serve
The MIPAQ™ BASe MOdule integrates shunts, while the MIPAQ™ sense
module offers an additional current measurement feature that is fully digital with
galvanically isolated output signals, and the MIPAQ™ serve module includes
driver electronics.
2
Integration Level
MIPAQ™ base
MIPAQ™ sense
MIPAQ™ serve
Chip technology
The MIPAQ™ family is based on an innovative packaging concept and utilizes
the advantages of the Infineon IGBT4 chip technology. This technology makes it
possible to increase the power density of IGBT modules. IGBT4 does not only provide approximately 20% lower switching losses than IGBT3 but also significantly
higher power cycling capability.
The operation junction temperature of IGBT4 is 150°C offering even more output
power and higher reliability for a variety of applications.
Solder and PressFIT Mounting Technology
THE MIPAQ™ BASE is available with the well known solder terminals while the
MIPAQ™ sense features PressFIT connections as state-of-the-art. The advantage
of the PressFIT process is, that it can be separated from the soldering process
and allows module mounting on soldering and component side of the PCB. This
increases the design flexibility. The high reliability of PressFIT contacts in general increases the system reliability. This is especially of interest, if modules are
operating in harsh environments.
Power Range
3
MIPAQ™ base
The Module with Integrated Shunts
Key Benefits
■ Compact modules with
a height of only 17mm
allowing low-inductive
system design
■ Well-proven econo
design
■ sixpack configuration
with shunts and nTC
■ Shunt values matched
to rated chip current
■ Allows accurate
current sensing
■ up to 150A nominal
current
■ Saves space and
system cost
■ 150°C operation
junction temperature
■ excellent power
cycling capability
■ high power density
for compact inverter
designs
■ RohS compliant
One Of The fIRST family members is the MIPAQ™ base module featuring IGBT4.
MIPAQ™ base provides an IGBT sixpack plus current sense shunts inside. Owing to
the integration of specially designed shunts, the performance with regard to system
cost is excellent. MIPAQ™ base modules in sixpack configuration with nTC are available in the well-proven econoPACK™ 3 housing with 75A, 100A and even 150A nominal
current and 1200V blocking voltage. MIPAQ™ base shunt modules save space, help to
manage the temperature on the PCB while allowing very high measurement accuracy.
Integrating Shunts in a Power Module
The ClASSICAl MeThOd to measure currents is using shunts. The voltage drop
across the shunt, caused by the current to be determined, is measured. This solution
has a known disadvantage as the resistor causes additional losses. Integrating current
sensors into industrial drives usually is done by mounting the sensor to PCB. The thermal situation gets difficult, if currents in a range of up to hundred amperes occur. due
to the losses caused by the shunt in addition to heat coming from power electronic
devices and from the PCB, temperatures beyond the level tolerable for PCB materials
could be reached. Thus it is mandatory to place shunts in an area where the power
losses can be dissipated easily. Including the shunts into a power module is leading
to excellent thermal properties. despite the temperature swing coming from the losses,
the shunts in the MIPAQ™ base provide a linear relation between measured voltage
and measured current across the whole range of current and temperature.
MIPAQ™ base
Circuit Diagram
Product Overview
Type
4
VCeS
V
IC
A
IfS75B12n3T4_B31
1200
75
IfS100B12n3T4_B31 1200 100
IfS150B12n3T4_B31 1200 150
…_B31: Pin for solder connection
VCesat
V
Tvj=25°C typ.
1,85
1,75
1,75
Ptot
W
385
515
750
RthjC
K/W
max.
0,39
0,29
0,20
Rshunt mΩ
Tvj=25°C
typ.
2,40
1,50
1,00
MIPAQ™ sense
The Module with digital Current Measurement
In AddITIOn TO The MIPAQ™ BASe with IGBT sixpack configuration and
three highly sophisticated current shunts, the MIPAQ™ sense module also
integrates a fully digital current measurement with galvanically isolated output
signals using the Sigma delta measurement method. With Infineon‘s Coreless
Transformer Technology (ClT), optocouplers are no longer required, saving additional board space. The measurement integrated in the MIPAQ™sense provides
accurate data for regulation purpose as well as information to handle over
current situations. The MIPAQ™ sense modules manage currents of 75 A and
100 A. They are available in econoPACK™ 3 housing using PressfIT interconnection technology for fast, reliable and solder-less mounting.
MIPAQ™ sense Functional Diagram
Key Benefits
■ Compact modules with
a height of only 17mm
allowing low-inductive
system design
■ Well-proven
econoPACK™ 3 package plus current measurement electronics
inside
■ up to 100A nominal
current
■ highly sophisticated
new current shunt
included
■ Sigma delta method
for current measurement inside
■ Galvanically insulated
current measurement
signal by using Infineon
Coreless Transformer
Technology (ClT), i. e.
no need for optocoupler
■ excellent accuracy and
temperature stability
■ Possibility to use current measurement with
either high accuracy or
short access time decided by software
■ Saves board space in
the application, due to
integrated shunts and
measurement electronic
■ 150°C operation junction temperature
■
■
■
excellent power
cycling capability
high power density
for compact inverter
designs
RohS compliant
5
Sigma-Delta conversion for Current Measurement
Any eQuIPMenT that connects the shunt to a microcontroller needs to be designed in a way that it separates control and power electronics. One common way
to do so is to have the voltage across the shunt digitized using an A/d-converter
that has its supply voltage referenced to the high side voltage. The A/d’s digital information is then passed to the control by means of optoelectronic compounds. These elements are known to age under high temperature.
A sophisticated measurement system is using the Sigma-delta (Σ/Δ) data conversion technology.
The technology offers a big advantage compared to conventional A/d converter
solutions. It only needs two channels for data streaming and clocking. Both
information lines easily can be galvanically isolated via Coreless Transformer
(ClT) technology
Sigma-Delta conversion
The ClT IS Well PROVen in IGBT-drivers and forms with the Sigma-delta technology an interface to the integrated shunt. The task to be completed by this
interface is to read out the electric value, transform it to digital information and
transmit this information to the controller level providing galvanic isolation.
COReleSS TRAnSfORMeR technology is approved for temperatures up to
150°C and therefore an optimum solution to be integrated into a power electronic module.
One Of The feATuReS of the Sigma-delta conversion is the ability to trade
speed for accuracy and vice versa. To generate a real measured value from the
Sigma-delta data stream, a decimator is necessary. This can be implemented as
a logical function, e.g. as a sinc³ filter in a fPGA.
Product Overview
Type
IfS75S12n3T4_B11
IfS100S12n3T4_B11
..._B11 PressfIT Module
6
VCeS
V
1200
1200
IC
A
VCesat
V
Tvj=25°C typ.
75
100
1,85
1,75
Rshunt
mΩ
Tvj=25°C typ.
2,40
1,50
MIPAQ™ serve
The Module with driver electronics
MIPAQ™ SeRVe is a highly reliable module integrating an IGBT sixpack configuration, a full set of driver ICs as well as a digital temperature measurement.
These functionalities enable MIPAQ™ serve to be a full plug-and-play solution
for high-current drive applications. Inside the module, there are galvanically isolated drivers based on Infineon‘s Coreless Transformer Technology. With the elimination of optical couplers, it will further enhance the modules‘ long-term stability. The MIPAQ™ serve modules, based on the newly designed econoPACK™ 4
utilizing IGBT4, cover the 1200V range and manage currents of 100 A, 150 A and
200 A. high current connections are done by using screws. Standardized connectors are provided for supply voltage and logic signals for plug-and-play.
due TO The InTeGRATIOn of ClT instead of optical couplers, the performance
of this new module family with regard to cost and long term stability is excellent.
Although electronics have been integrated into the module, it offers the same
high reliability as all other Infineon‘s IGBT families.
MIPAQ™ serve Functional Diagram
7
Driver Electronics Inside
deSIGnInG A PROPeR CIRCuIT to drive a given IGBT module is one of the tasks
that have to be done repeatedly binding resources, taking time and effort. This
not only relates to choosing components and routing a layout, it also needs to be
tested to the full extent to guarantee its function under all relevant module operating conditions. This time consuming process is eliminated as the MIPAQ™ serve
already includes the 100% tested IGBT driver with the following characteristics:
■
■
■
■
Proper driving of the IGBT by
applying a sufficient gate pulse
Turn off with negative gate voltage
5V logic supply and 5V-CMOScompatible
Galvanic isolation towards the
control electronics
■
■
■
■
■
Short circuit protection
undervoltage lockout
Active Miller clamping
error signal generation in case
of failures
fully digital temperature measurement utilizing the internal nTC
GAlVAnIC ISOlATIOn is achieved by implemented Coreless Transformer
Technology (ClT). Short circuit is detected utilizing desaturation recognition.
error signals are generated in case of undervoltage or short circuit. The internal
nTC is used to capture the base plate’s temperature. The signal generated is
transported to the logic via Coreless Transformer as well providing a galvanic
separation for the temperature measurement. The isolation achieved with ClT
today qualifies as functional isolation.
TO eASe ACCeSS to the device, the interface consists of connectors according
to industrial standards. They are used to connect the gate driver supply voltages
as well as the logic supply, control and error signals.
Key Benefits
■ econoPACK™ 4 package
plus driver on top
saves board space in
the application
■ up to 200A nominal
current
■ designed for robustness: ultrasonic
welding technology;
Injection molded
dC-bus-bar, control pins
and power terminals
■ highly sophisticated
ClT included leads to
improved system reliability due to elimination of optoelectronics
■ True baseplate temperature measurement
providing digital information to the user –
galvanically separated
■ Increasing both output
power and efficiency
due to optimized dead
time
■ Industrial standard
connectors
■ Plug & play solution
for high current drives
■ 150°C operation junction temperature
■ RohS compliant
8
MIPAQ™
serve
Internal
Function
Block
Diagram
Increasing the inverter’s output voltage
Standard driver circuits often contain optoelectronic elements that show two
major drawbacks. Optoelectronic components are known to age over time especially
at higher temperature levels. The deviation of the propagation delay of commonly
used optoelectronic gate driver circuits is in the range of up to 400ns. Due to safety
concerns, the dead time implemented in many designs exceeds 2μs to ensure proper operation during the predicted lifetime. Within the MIPAQ™ serve the deviation
between the six IGBT channels is drastically reduced. Turning on the six IGBTs with a
single pulse reveals that all six gate voltages are synchronous within a tolerance of
Dependency of output
voltage ratio vs. dead
time and switching
frequency
less than 20ns. This is the key to decreasing the dead time, necessary to prevent the
risk of short circuit during the commutation. Reduced dead times lead to an increase
in the inverter’s output voltage increasing both its output power and efficiency.
The EconoPACK™ 4 advantage
With the EconoPACK™ 4, Infineon introduced the new standard for highly
reliable IGBT modules. The power section’s internal construction is designed for
increased reliability and improved thermal capabilities. The package based on the
well-known Econo housing principle is characterized by its flat geometry. As a consequence of the higher power ratings, compared to the EconoPACK™ and EconoPIM™
modules, the main terminals are built as screw connections. These power terminals
feature the so called flow through concept, similar to Infineon’s EconoPACK™ +. One
module side contains the screw terminals for the DC link and the opposite side of
the package provides the screw terminals for the AC output connection. The module
height reduces the demand of volume significantly while keeping the mounting procedure very easy. A relatively flat inverter structure is the result.
Ultrasonic welding (USW) to replace frame bonding is one major step to
increase the mechanical robustness. In-frame bus bars form a low inductive interface from the terminals to the semiconductors. The massive copper that is now
used instead of bond wires reduces the resistance from the terminals to the DCB
thereby decreasing the ohmic losses inside the module. Optimised gate driver
connection is achieved by placing the driver on top of the module. PressFIT connections between module and PCB for the control section further increase the reliability as a gas-tight, low resistive, cold welded connection is achieved.
Product Overview
MIPAQ™serve
IFS100V12PT4
IFS150V12PT4
IFS200V12PT4
VCES
V
1200
1200
1200
IC
A
VCEsat
V
Tvj=25°C typ.
100
150
200
1,75
1,75
1,75
RthjC
max
K/W
0,3
0,22
0,15
9
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Published by
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© 2010 Infineon Technologies AG.
All Rights Reserved.
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Order Number: B133-H9385-G1-X-7600
Date: 04/2010
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
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