INFINEON PZTA14_08

PZTA14
NPN Silicon Darlington Transistor
• For general AF applications
4
• High collector current
3
2
• High current gain
1
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
PZTA14
Marking
PZTA14 1=B
Pin Configuration
2=C
3=E
4=C
-
Package
-
SOT223
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCES
30
Collector-base voltage
VCBO
30
Emitter-base voltage
VEBO
10
Collector current
IC
300
Peak collector current
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
TS ≤ 124 °C
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
≤ 17
K/W
1Pb-containing
2For
package may be available upon special request
calculation of R thJA please refer to Application Note Thermal Resistance
1
2008-03-07
PZTA14
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)CBO
30
-
-
V(BR)CES
30
-
-
V(BR)EBO
10
-
-
DC Characteristics
Collector-base breakdown voltage
V
IC = 100 µA, IE = 0
Collector-emitter breakdown voltage
IC = 100 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 30 V, IE = 0
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
10
-
-
100
Emitter-base cutoff current
I EBO
nA
VEB = 10 V, IC = 0
DC current gain1)
-
h FE
IC = 10 mA, VCE = 5 V
10000
-
-
IC = 100 mA, V CE = 5 V
20000
-
-
VCEsat
-
-
1.5
VBEsat
-
-
2
125
-
-
MHz
-
3
-
pF
Collector-emitter saturation voltage1)
V
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
AC Characteristics
Transition frequency
fT
IC = 50 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
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PZTA14
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 6
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
PZTA 13/14
EHP00719
PZTA 13/14
10 3
EHP00720
mA
5
ΙC
125 ˚C
10 5
150 ˚C
25 ˚C
-50 ˚C
10 2
25 ˚C
5
5
-55 ˚C
10 4
10 1
5
5
10 3
10 -1
10
0
10
1
10
2
mA 10
10 0
3
0
0.5
1.0
V
ΙC
V CEsat
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
Base-emitter saturation voltage
IC = ƒ(V BEsat), hFE = 1000
10 3
1.5
PZTA 13/14
EHP00721
10 4
mA
PZTA 13/14
EHP00718
nA
ΙC
Ι CB0
150 ˚C
25 ˚C
-50 ˚C
10 2
max
10 3
5
5
typ
10 2
5
10 1
10 1
5
5
10 0
0
1.0
2.0
V
10 0
3.0
V BEsat
0
50
100
˚C
150
TA
3
2008-03-07
PZTA14
Transition frequency fT = ƒ(IC)
VCE = 5 V, f = 200 MHz
10 3
MHz
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00717
19
pF
5
CCB/CEB
fT
PZTA 13/14
Collector-base capacitance Ccb = ƒ(V CB)
15
13
11
10
2
CEB
9
5
7
5
CCB
3
10 1
10 0
5 10 1
5 10 2
mA
1
0
10 3
4
8
12
16
V
ΙC
Total power dissipation Ptot = ƒ(TS)
22
VCB/VEB
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
1650
mW
PZTA 13/14
Ptot max
5
Ptot DC
EHP00311
D=
1350
tp
T
tp
T
Ptot
1200
10 2
1050
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
900
750
600
10 1
450
5
300
150
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
4
2008-03-07
Package SOT223
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
Package Outline
PZTA14
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
Foot Print
1.4
4.8
1.4
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
7.55
12
8
Pin 1
1.75
6.8
5
2008-03-07
PZTA14
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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2008-03-07