BCX69... PNP Silicon AF Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCX69-10 CF 1=B 2=C 3=E SOT89 BCX69-16 CG 1=B 2=C 3=E SOT89 BCX69-25 CH 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 20 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 3 W 150 °C Value Unit V A mA TS = 114 °C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS -65 ... 150 Value ≤ 12 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-05 BCX69... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 20 Unit V IC = 30 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 25 - - V(BR)EBO 5 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 - - 100 DC current gain1) - hFE IC = 5 mA, VCE = 10 V 50 - - IC = 500 mA, VCE = 1 V, BCX69-10 85 100 160 IC = 500 mA, VCE = 1 V, BCX69-16 100 160 250 IC = 500 mA, VCE = 1 V, BCX69-25 160 250 375 IC = 1 A, VCE = 1 V 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 V - - 1 - 100 - Collector-emitter saturation voltage1) VCEsat V IC = 1 A, IB = 100 mA Base-emitter voltage1) VBE(ON) AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 20 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-10-05 BCX69... DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 BCX 69 EHP00475 4 BCX 69 10 EHP00473 mA 5 h FE ΙC 100 ˚C 3 10 25 ˚C 10 2 5 -50 ˚C 100 ˚C 25 ˚C -50 ˚C 5 2 10 5 10 1 1 10 5 5 10 0 10 0 0 10 5 10 1 5 10 2 5 10 3 mA 0 10 4 0.2 0.4 0.6 ΙC Collector current IC = ƒ(VBE ) IC = ƒ(VBEsat), hFE = 10 VCE = 1V BCX 69 0.8 VCE sat Base-emitter saturation voltage 10 4 V 10 4 EHP00472 BCX 69 EHP00474 mA mA ΙC ΙC 10 3 10 3 5 5 100 ˚C 25 ˚C -50 ˚C 10 2 10 2 5 5 1 1 10 10 5 5 10 0 100 ˚C 25 ˚C -50 ˚C 0 0.2 0.4 0.6 0.8 10 0 1.0 V 1.2 VBE sat 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE 3 2011-10-05 BCX69... Collector cutoff current ICBO = ƒ(TA) VCB = 25 V BCX 69 10 5 nA Ι CB0 Transition frequency fT = ƒ(IC) VCE = 5 V EHP00471 10 3 BCX 69 EHP00469 MHz fT max 10 4 5 5 10 3 5 10 2 typ 10 2 5 5 1 10 5 10 0 0 50 100 10 1 10 0 150 ˚C 5 10 1 5 10 2 mA 10 3 ΙC TA Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 2 3.5 W Ptot RthJS 2.5 10 1 2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 1.5 10 0 1 0.5 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-10-05 BCX69... Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SOT89 BCX69... Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 6 1.6 2011-10-05 BCX69... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-05