BDP948_BDP950_BDP954 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BDP947, BDP949 BDP953 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration BDP948 BDP948 1=B 2=C 3=E 4=C - - SOT223 BDP950 BDP950 1=B 2=C 3=E 4=C - - SOT223 BDP954 BCP954 1=B 2=C 3=E 4=C - - SOT223 1 Package 2011-10-05 BDP948_BDP950_BDP954 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BDP948 45 BDP950 60 BDP954 100 Collector-base voltage Unit VCBO BDP948 45 BDP950 60 BDP954 120 Emitter-base voltage VEBO 5 Collector current IC 3 Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 Peak base current IBM 500 Total power dissipation- Ptot 5 W 150 °C A mA TS ≤ 100 °C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit ≤ 10 K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-10-05 BDP948_BDP950_BDP954 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BDP948 45 - - IC = 10 mA, IB = 0 , BDP950 60 - - IC = 10 mA, IB = 0 , BDP954 100 - - IC = 100 µA, IE = 0 , BDP948 45 - - IC = 100 µA, IE = 0 , BDP950 60 - - IC = 100 µA, IE = 0 , BDP954 120 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 45 V, IE = 0 - - 0.1 VCB = 45 V, IE = 0 , TA = 150 °C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 85 - 475 IC = 1 A, VCE = 2 V BDP948,BDP950 50 - - BDP954 15 - - VCEsat - - 0.5 VBEsat - - 1.3 fT - 100 - MHz Ccb - 40 - pF IC = 1 A, VCE = 2 V Collector-emitter saturation voltage1) V IC = 2 A, IB = 0.2 A Base emitter saturation voltage1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 100 MHz 1Pulse test: t < 300µs; D < 2% 3 2011-10-05 BDP948_BDP950_BDP954 DC current gain hFE = ƒ(IC) VCE = 2 V Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 10 3 10 4 mA - IC hFE 10 3 10 2 10 100 °C 25 °C -50 °C 10 1 0 10 10 100°C 25°C -50°C 2 10 1 1 10 2 10 3 mA 10 10 0 0 4 0.1 0.2 0.3 V 0.4 IC Base-emitter saturation voltage Collector current IC = ƒ(VBE) IC = (VBEsat), hFE = 10 VCE = 2 V 10 4 10 4 mA mA 10 3 10 3 -50°C 25°C 100°C IC IC -50°C 25°C 100°C 10 2 10 2 10 1 10 0 0 0.6 VCEsat 10 1 0.2 0.4 0.6 0.8 1 V 10 0 0 1.3 VBEsat 0.2 0.4 0.6 0.8 1 V 1.3 VBE 4 2011-10-05 BDP948_BDP950_BDP954 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 10 5 nA 425 pF 350 CCB(CEB ) ICB0 10 4 10 3 max 10 2 300 250 200 CEB 150 10 1 typ 100 10 0 50 CCB 10 -1 0 20 40 60 80 100 120 °C 0 0 150 4 8 12 16 TA V 22 VCB(VEB Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 2 5.5 W 4.5 RthJS Ptot 4 3.5 10 1 3 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 2.5 2 10 0 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 ts 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 BDP948_BDP950_BDP954 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-10-05 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BDP948_BDP950_BDP954 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2011-10-05 BDP948_BDP950_BDP954 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-10-05