INFINEON Q62702-B912

BBY 58-03W
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
2
• Low series inductance
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
1
• For low frequency control elements
VPS05176
such as TCXOs and VCXOs
• Very low capacitance spread
Type
Marking
Ordering Code
Pin Configuration
Package
BBY 58-03W
8 cathd.yellow
Q62702-B912
1=C
SOD-323
2=A
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
10
V
Forward current
IF
20
mA
Operating temperature range
T op
-55 ...+150
°C
Storage temperature
T stg
-55 ...+150
Semiconductor Group
Semiconductor Group
11
Value
Unit
Au 1998-11-01
-03-1998
BBY 58-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
1
IR
-
-
100
DC characteristics
Reverse current
nA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
17.5
18.3
19.3
VR = 2 V, f = 1 MHz
-
12.35
-
VR = 3 V, f = 1 MHz
-
8.6
-
VR = 4 V, f = 1 MHz
5.5
6
6.6
CT1/C T3
-
2.15
-
CT1/C T4
2.8
3.05
3.3
rs
-
0.25
-
Ω
CC
-
0.09
-
pF
Ls
-
0.6
-
nH
Capacitance ratio
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group
Semiconductor Group
22
Au 1998-11-01
-03-1998
BBY 58-03W
Temperature coefficient of the diode
Diode capacitance CT = f (V R)
f = 1MHz
capacitance TCc = f (VR)
10 -2
32
pF
1/°C
CT
T Cc
24
20
10 -3
16
12
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
10 -4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
VR
V
5.0
VR
Normalized diode capacitance
C(TA) / C(25°C)= f (T A)
f = 1MHz, VR = Parameter
1.04
1V
CTA
1.02
/C 25°C
4V
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-30
-10
10
30
50
70
°C
100
TA
Semiconductor Group
Semiconductor Group
33
Au 1998-11-01
-03-1998