INFINEON BGA427H6327XTSA1

BGA427
Si-MMIC-Amplifier in SIEGET 25-Technologie
• Cascadable 50 Ω-gain block
3
• Unconditionally stable
•
2
4
Gain |S 21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
1
IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
3
• Typical device voltage VD = 2 V to 5 V
+V
• Reverse isolation > 35 dB (Appl.2)
• Pb-free (RoHS compliant) package
4
OUT
Circuit Diagram
IN
1
2
GND
EHA07378
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
BGA427
BMs
Pin Configuration
1, IN
2, GND 3, +V
Package
4, Out
SOT343
Maximum Ratings
Parameter
Symbol
Device current
ID
Device voltage
VD,+V
Total power dissipation
Ptot
150
mW
RF input power
PRFin
-10
dBm
Junction temperature
Tj
150
°C
Ambient temperature range
TA
-65 ... 150
Storage temperature range
Tstg
-65 ... 150
Value
Unit
25
mA
6
V
TS = 120 °C
Thermal Resistance
Junction - soldering point1)
1For
RthJS
≤ 295
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
1
2011-09-15
BGA427
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC characteristics VD = 3 V, Zo = 50Ω, Testfixture Appl.1
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
|S21|2
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
S12
Intercept point at the output
f = 1.8 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
dB
-
27
22
18.5
22
-
-
1.9
2
2.2
-
IP3out
-
+7
-
dBm
RLin
-
>12
-
dB
RLout
-
>9
-
NF
Typical configuration
Appl.1
Appl.2
+V
+V
100 pF
RF OUT
1 nF
10 nF
100 nH
2.2 pF
BGA 427
100 pF
100 pF
100 pF
RF IN
RF OUT
GND
EHA07379
BGA 427
100 pF
RF IN
GND
EHA07380
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path (appl.1).
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
2
2011-09-15
BGA427
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
f
S11
GHz
MAG
S21
ANG
VD = 3V, Zo = 50Ω
0.1382
-38.3
0.1
0.1179
-16
0.2
0.1697
-20.8
0.5
0.1824
-56.9
0.8
0.1782
-69.1
0.9
0.176
-80.6
1
0.1827
-133.5
1.5
0.1969
-156.1
1.8
0.2021
-162.8
1.9
0.2116
-167.7
2
0.2437
172.8
2.5
0.258
153.3
3
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
+V
BGA 427-chip
including parasitics
13
R2
T2
R1
IN
R3
C’-E’Diode
14
C1
11
C P3
T1
C P1
C P4
C P5
R4
C P2
12
GND
EHA07381
3
OUT
T1
T2
R1
R2
R3
R4
C1
CP1
CP2
CP3
CP4
CP5
C'-E'-diode
T501
T501
14.5kΩ
280Ω
2.4kΩ
170Ω
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
T1
2011-09-15
BGA427
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
fA
V
BF =
83.23
VAF =
0.21024
39.251
NF =
1.0405
0.16493
A
ISE =
15.761
fA
IKF =
NE =
1.7763
-
BR =
10.526
-
NR =
0.96647
-
VAR =
34.368
V
IKR =
0.25052
A
ISC =
0.037223
fA
NC =
1.3152
-
RB =
15
Ω
IRB =
0.21215
A
RBM =
1.3491
Ω
RE =
1.9289
RC =
0.12691
Ω
CJE =
3.7265
fF
VJE =
0.70367
V
MJE =
0.37747
TF =
4.5899
ps
XTF =
0.3641
-
VTF =
0.19762
V
ITF =
1.3364
mA
PTF =
0
deg
CJC =
96.941
fF
VJC =
0.99532
V
MJC =
0.48652
-
XCJC =
0.08161
-
TR =
1.4935
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99469
-
TNOM
300
K
-
RS =
20
Ω
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
C1 =
C2 =
C3 =
L1 =
L2 =
0.36
0.4
0.3
0.15
0.36
0.4
95
6
132
28
88
8
0.6
0.4
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
nH
nH
IS =
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
2
IS =
fA
N=
1.02
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L2
OUT
C1
C3
L1
C CB
C2
14
L BO
L BI
IN
11
BGA 427
Chip
12
C BE
13
L CI
L CO
+V
C’-E’Diode
C CE
L EI
L EO
GND
EHA07382
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
4
2011-09-15
BGA427
Insertion power gain |S21|2 = f (f)
Noise figure NF = f (f)
VD, ID = parameter
VD,ID = parameter
5
35
dB
dB
25
3.5
RTF-2
|S21|2
4
20
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
3
2.5
15
2
1.5
10
1
5
0.5
0 -1
10
10
0
GHz
10
0 -1
10
1
f
10
0
GHz
10
RTF-1
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
25
IP3out
dBm
15
10
5
0 -1
10
10
0
GHz
10
1
f
5
2011-09-15
1
Package SOT343
BGA427
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
6
2011-09-15
BGA427
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2011-09-15