http://www.ti.com/lit/an/sboa019/sboa019.pdf

APPLICATION BULLETIN
®
Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706
Tel: (602) 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
DIODE-BASED TEMPERATURE MEASUREMENT
BY R. MARK STITT AND DAVID KUNST (602) 746-7445
Diodes are frequently used as temperature sensors in a wide
variety of moderate-precision temperature measurement
applications. The relatively high temperature coefficient of
about –2mV/°C is fairly linear. To make a temperature
measurement system with a diode requires excitation, offsetting, and amplification. The circuitry can be quite simple.
This Bulletin contains a collection of circuits to address a
variety of applications.
4.5V to 36V
REF200
100µA
100µA
R2
A1
THE DIODE
Just about any silicon diode can be used as a temperature
measurement transducer. But the Motorola MTS102 Silicon
Temperature Sensor is a diode specifically designed and
optimized for this function. It is intended for temperature
sensing applications in automotive, consumer and industrial
products where low cost and high accuracy are important.
Packaged in a TO-92 package it features precise temperature
accuracy of ±2°C from –40°C to +150°C.
EXCITATION
A current source is the best means for diode excitation. In
some instances, resistor biasing can provide an adequate
approximation, but power supply variations and ripple can
cause significant errors with this approach. These problems
are exacerbated in applications with low power supply
voltages such as 5V single supply systems. Since the MTS102
is specified for 100µA operation, the Burr-Brown REF200
Dual 100µA Current Source/Sink makes the perfect match.
One current source can be used for excitation and the other
current source can be used for offsetting.
AMPLIFICATION
In most instances, any precision op amp can be used for
diode signal conditioning. Speed is usually not a concern.
When ±15V supplies are available, the low cost precision
OPA177 is recommended. For 5V single-supply applications, the OPA1013 Dual Single-Supply op amp is recommended. Its inputs can common-mode to its negative power
supply rail (ground in single-supply applications), and its
output can swing to within about 15mV of the negative rail.
Figure 1 shows the simplest diode-based temperature measurement system. One of the 100µA current sources in the
REF200 is used for diode excitation. The other current
source is used for offsetting. One disadvantage of this circuit
is that the span (GAIN) and zero (OFFSET) adjustments are
interactive. You must either accept the initial errors or use an
©
1991 Burr-Brown Corporation
SBOA019
AB-036
VO
OPA1013
R1
Motorola
MTS102
VO = VBE (1 + R2/R1) – 100µA • R2
Where:
VBE = voltage across diode (V)
Zero and span adjustments with
R1 and R2 are interactive.
Figure 1. Simple Diode-based Temperature Measurement
Circuit.
interactive adjustment technique. Another possible disadvantage is that the temperature to voltage conversion is
inverting. In other words, a positive change in temperature
results in a negative change in output voltage. If the output
is to be processed in a digital system, neither of these
limitations may be a disadvantage.
The following relationships can be used to calculate nominal
resistor values for the Figure 1 circuit.
BASIC TRANSFER FUNCTION
VO = VBE (1 + R2/R1) – 100µA • R2
CALCULATING RESISTOR VALUES
R1 = (δV /δT) • (V
+ TC • (TMIN –25°C)) – (TC • V1)
O
BE25
100µA • ((δVO/δT) – TC)
R2 = R1 • (
(δVO/δT)
TC
– 1)
Where:
R1, R2 = Resistor values (Ω)
VBE = Voltage across diode (V)
VBE25 = Diode voltage at 25°C (V)
Three choices are available for the MTS102—See table
on page 2.
Printed in U.S.A. September, 1991
V1 = Output voltage of circuit at TMIN (V)
R2 = R1 • (
VO = Output voltage of circuit (V)
TC = Diode temperature coefficient (V/°C)
Others = as before
δV O/δT = Desired output voltage change for given
temperature change (V/°C)
(Note: Must be negative for Figure 1 circuit.)
EXAMPLE
Design a temperature measurement system with a 0 to –1.0V
output for a 0 to 100°C temperature.
AVAILABLE VBE25 AND TC VALUES FOR
MOTOROLA MTS102 TEMPERATURE SENSOR
0.580
0.595
0.620
–0.002315
–0.002265
–0.002183
– 1)
RZERO = Zero (offset) adjust resistor (Ω)
TMIN = Minimum process temperature (°C)
TC
(V/°C)
TC
Where:
TC value depends on VBE25—See table below.
VBE25
(V)
(δVO/δT)
TMIN = 0°C
δVO/δT = (–1V – 0V)/(100°C – 0°C) = –0.01V/°C
If VBE25 = 0.595V, TC = –0.002265V/°C, and
RZERO = 1kΩ (use 2kΩ pot)
R1 = 9.717kΩ
EXAMPLE
Design a temperature measurement system with a 0 to –1.0V
output for a 0 to 100°C temperature.
R2 = 33.18kΩ
TMIN = 0°C
For a 0 to –10V output with a 0 to 100°C temperature:
RZERO = 1kΩ (use 2kΩ pot)
δVO/δT = (–1V – 0V)/(100°C – 0°C) = –0.01V/°C
R1 = 7.69kΩ
R2 = 331.8kΩ
If VBE25 = 0.595V, TC = –0.002265V/°C, and
R1= 8.424kΩ
R2= 28.77kΩ
4.5V to 36V
For a 0 to –10V output with a 0 to 100°C temperature:
R1= 6.667kΩ
R2= 287.7kΩ
REF200
100µA
If independent adjustment of offset and span is required
consider the circuit shown in Figure 2. In this circuit, a third
resistor, RZERO is added in series with the temperaturesensing diode. System zero (offset) can be adjusted with
RZERO without affecting span (gain). To trim the circuit adjust
span first. Either R1 or R2 (or both) can be used to adjust
span. As with the Figure 1 circuit this circuit has the possible
disadvantage that the temperature to voltage conversion is
inverting.
100µA
R2
A1
OPA1013
Motorola
MTS102
RZero
The following relationships can be used to calculate nominal
resistor values for the Figure 2 circuit.
BASIC TRANSFER FUNCTION
VO = (VBE + 100µA • RZERO) • (1 + R2/R1) – 100µA • R2
VO
R1
VO = (VBE + 100µA • RZERO) • (1 + R2/R1) – 100µA • R2
Where:
VBE = voltage across diode (V)
Adjust span first with R1 or R2 then adjust zero with RZERO
for noninteractive trim.
CALCULATING RESISTOR VALUES
Set RZERO = 1kΩ (or use a 2kΩ pot)
R1 =
Figure 2. Diode-based Temperature Measurement Circuit
with Independent Span (gain) and Zero (offset)
Adjustment.
(δVO/δT) • (VBE25 + (RZERO • 100µA) + TC • (TMIN – 25°C)) – (TC • V1)
100µA • ((δVO/δT) – TC)
2
For a noninverting temperature to voltage conversion, consider the circuit shown in Figure 3. This circuit is basically
the same as the Figure 2 circuit except that the amplifier is
connected to the low side of the diode. With this connection,
the temperature to voltage conversion is noninverting. As
before, if adjustment is required, adjust span with R1 or R2
first, then adjust zero with RZERO.
R1
RZero
R2
A1
Motorola
MTS102
A disadvantage of the Figure 3 circuit is that it requires a
negative power supply.
OPA1013
The following relationships can be used to calculate nominal
resistor values for the Figure 3 circuit.
VO
REF200
100µA
100µA
BASIC TRANSFER FUNCTION
VO = (–VBE – 100µA • RZERO) • (1 + R2/R1) + 100µA • R2
–VS
VO = (–VBE – 100µA • RZERO) • (1 + R2/R1) + 100µA • R2
Where:
VBE = voltage across diode (V)
CALCULATING RESISTOR VALUES
R1 = same as Figure 2
R2 = same as Figure 2
Adjust span first with R1 or R2 then adjust zero with RZERO
for noninteractive trim.
Where:
Components = as before
Figure 3. Positive Transfer Function Temperature Measurement Circuit with Independent Span (gain) and
Zero (offset) Adjustment.
EXAMPLE
Design a temperature measurement system with a 0 to 1.0V
output for a 0 to 100°C temperature.
BASIC TRANSFER FUNCTION
VO = 100µA • RZERO • (1 + R2/R1) – VBE • R2/R1
TMIN = 0°C
δVO/δT = (1V – 0V)/(100°C – 0°C) = 0.01V/°C
CALCULATING RESISTOR VALUES
If VBE25 = 0.595V, TC = –0.002265V/°C, and
RZERO =
RZERO = 1kΩ
R1 = 9.717kΩ
(TC • V1) – (δVO/δT) • (VBE25 + TC • (TMIN – 25°C))
100µA • (TC – (δVO/δT))
R1 = 10kΩ (arbitrary)
R2 = 33.18kΩ
For a 0 to 10V output with a 0 to 100°C temperature:
R2 = –R1 • (
RZERO = 1kΩ
R1 = 7.69kΩ
(δVO/δT)
TC
)
Where:
Components = as before
R2 = 331.8kΩ
For a single-supply noninverting temperature to voltage
conversion, consider the Figure 4 circuit. This circuit is
similar to the Figure 2 circuit, except that the temperaturesensing diode is connected to the inverting input of the
amplifier and the offsetting network is connected to the
noninverting input. To prevent sensor loading, a second
amplifier is connected as a buffer between the temp sensor
and the amplifier. If adjustment is required, adjust span with
R1 or R2 first, then adjust zero with RZERO.
EXAMPLE
Design a temperature measurement system with a 0 to 1.0V
output for a 0 to 100°C temperature.
TMIN = 0°C
δVO/δT = (1V – 0V)/(100°C – 0°C) = 0.01V/°C
If VBE25 = 0.595V, TC = –0.002265V/°C, and
The following relationships can be used to calculate nominal
resistor values for the Figure 4 circuit.
RZERO = 5.313kΩ
R1= 10.0kΩ
R2= 44.15kΩ
3
For a 0 to 10V output with a 0 to 100°C temperature:
The following relationships can be used to calculate nominal
resistor values for the Figure 5 circuit.
RZERO = 6.372kΩ
R1 = 10.0kΩ
BASIC TRANSFER FUNCTION
R2 = 441.5kΩ
VO = ((VBE2 + 100µA • RZERO2) – (VBE1 + 100µA • RZERO1)) • GAIN
4.5V to 36V
Where:
GAIN = 2 + 2 • R1/RSPAN
REF200
CALCULATING RESISTOR VALUES
100µA
100µA
RSPAN =
–2 • R1 • TC
(δVO/δT) + 2 • TC
RZERO1 = RZERO2 = 500Ω (use 1kΩ pot for RZERO)
A1
OPA1013
R1
R2
Where:
A2
OPA1013
RSPAN = Span (gain) adjust resistor [Ω]
VO
Others = as before
RZERO
Motorola
MTS102
EXAMPLE
Design a temperature measurement system with a 0 to 1.0V
output for a 0 to 1°C temperature differential.
VO = 100µA • RZER O • (1 + R2/R1) – VBE • R2/R1
TMIN = 0°C
Where:
VBE = voltage across diode [V]
δVO/δT = (1V – 0V)/(1°C – 0°C) = 1.0V/°C
Adjust span first with R1 or R2 then adjust zero
If VBE25 = 0.595V, TC = –0.002265V/°C, and
with RZERO for noninteractive trim.
RZERO = 1kΩ pot
Figure 4. Single-supply Positive Transfer Function Temperature Measurement Circuit with Independent Span
(gain) and Zero (offset) Adjustment.
R1, R2, R3, R4 = 100kΩ, 1%
RSPAN = 455Ω
For differential temperature measurement, use the circuit
shown in Figure 5. In this circuit, the differential output
between two temperature sensing diodes is amplified by a
two-op-amp instrumentation amplifier (IA). The IA is formed
from the two op amps in a dual OPA1013 and resistors R1,
R2, R3, R4, and RSPAN. RSPAN sets the gain of the IA. For good
common-mode rejection, R1, R2, R3, and R4 must be matched.
If 1% resistors are used, CMR will be greater than 70dB for
gains over 50V/V. Span and zero can be adjusted in any
order in this circuit.
For a 0 to 10V output with a 0 to 1°C temperature differential:
RZERO = 1kΩ pot
R1, R2, R3, R4 = 100kΩ, 1%
RSPAN = 45.3Ω
4
4.5V to 36V
REF200
RSPAN
100µA
100µA
R1
100kΩ
R2
100kΩ
R3
100kΩ
A1
R4
100kΩ
OPA1013
A2
OPA1013
Motorola
MTS102
Motorola
MTS102
RZERO
VO
VO = ((VBE2 + 100µA • RZERO2) – (VBE1 • + 100µA • RZERO1)) • GAIN
GAIN = 2 + 2 • R1/RSPAN
Adjust zero and span in any order.
Figure 5. Differential Temperature Measurement Circuit.
5
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  2000, Texas Instruments Incorporated