BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package - SOT23 Maximum Ratings Parameter Symbol Drain-source voltage VDS 20 V Continuous drain current ID 30 mA Gate-source peak current ± IGSM 10 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value Unit TS ≤ 76 °C °C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2) Rthchs ≤ 370 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BF999 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DS 20 - - ±V(BR)GSS 6.5 - 12 ± IGSS - - 50 nA IDSS 5 10 16 mA -VGS(p) - 0.8 1.5 V DC Characteristics Drain-source breakdown voltage V ID = 10 µA, -VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 Gate-source leakage current ± V GS = 5 V, V DS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, I D = 20 µA Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 14 20 - mS Cgss - 2.5 - pF Cdss - 0.9 - pF Gp - 27 - dB F - 2.1 - dB AC Characteristics Forward transconductance gfs VDS = 10 V, I D = 10 mA Gate input capacitance VDS = 10 V, I D = 10 mA, f = 10 MHz Output capacitance VDS = 10 V, I D = 10 mA, f = 10 MHz Power gain VDS = 10 V, I D = 10 mA, f = 45 MHz Noise figure VDS = 10 V, I D = 10 mA, f = 45 MHz 2 2007-04-20 BF999 Total power dissipation Ptot = ƒ(TS) Output characteristics ID = ƒ(V DS) 250 18 mA 0.3V 14 0.2V 12 0.1V 10 0V ID P tot mW 150 -0.1V 8 100 -0.2V 6 -0.3V 4 50 -0.4V 2 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 5 10 TS 20 VDS Gate transconductance gfs = ƒ(V GS) Drain current ID = (V GS) 30 30 mS mA 20 20 ID Gfs V 15 15 10 10 5 5 0 -1 -0.5 0 0.5 V 0 -1 1.5 VGS V 1 VGS 3 2007-04-20 BF999 Gate input capacitance Cgss = ƒ(VGS) Output capacitance C dss = ƒ(VDS) 3 pF CdSS CgSS 3 1 0 -2 pF 1 -1 V 0 0 1 VGS 5 V 15 VDS 4 2007-04-20 Package SOT23 BF999 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2007-04-20 BF999 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-20