ILD615/ILQ615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) FEATURES Dual Channel • Identical channel to channel footprint A 1 8 C C 2 7 E A 3 6 C C 4 5 E • Dual and quad packages feature: - Reduced board space - Lower pin and parts count - Better channel to channel CTR match - Improved common mode rejection • Isolation test voltage from double molded package, 5300 VRMS • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Quad Channel 1 16 C AGENCY APPROVALS C 2 15 E A 3 14 C • UL1577, file no. E52744 system code H or J, double protection C 4 13 E • CSA 93751 A 5 12 C • BSI IEC 60950; IEC 60065 C 6 11 E A 7 10 C • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 C 8 9 E A i179052 DESCRIPTION The ILD615/ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS. The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD615/ILQ615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA. Document Number: 83652 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 1 ILD615/ILQ615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) ORDER INFORMATION PART REMARKS ILD615-1 CTR 40 to 80 %, dual channel, DIP-8 ILD615-2 CTR 63 to 125 %, dual channel, DIP-8 ILD615-3 CTR 100 to 200 %, dual channel, DIP-8 ILD615-4 CTR 160 to 320 %, dual channel, DIP-8 ILQ615-1 CTR 40 to 80 %, quad channel, DIP-16 ILQ615-2 CTR 63 to 125 %, quad channel, DIP-16 ILQ615-3 CTR 100 to 200 %, quad channel, DIP-16 ILQ615-4 CTR 160 to 320 %, quad channel, DIP-16 ILD615-1X007 CTR 40 to 80 %, dual channel, SMD-8 (option 7) ILD615-2X006 CTR 63 to 125 %, dual channel, DIP-8 400 mil (option 6) ILD615-2X009 CTR 63 to 125 %, dual channel, SMD-8 (option 9) ILD615-3X006 CTR 100 to 200 %, dual channel, DIP-8 400 mil (option 6) ILD615-3X007 CTR 100 to 200 %, dual channel, SMD-8 (option 7) ILD615-3X009 CTR 100 to 200 %, dual channel, SMD-8 (option 9) ILD615-4X006 CTR 160 to 320 %, dual channel, DIP-8 400 mil (option 6) ILD615-4X009 CTR 160 to 320 %, dual channel, SMD-8 400 mil (option 9) ILQ615-1X009 CTR 40 to 80 %, quad channel, SMD-16 (option 9) ILQ615-2X007 CTR 63 to 125 %, quad channel, SMD-16 (option 7) ILQ615-3X006 CTR 100 to 200 %, quad channel, DIP-16 400 mil (option 6) ILQ615-3X009 CTR 100 to 200 %, quad channel, SMD-16 (option 9) ILQ615-4X007 CTR 160 to 320 %, quad channel, SMD-16 (option 7) ILQ615-4X009 CTR 160 to 320 %, quad channel, SMD-16 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VR 6.0 V mA INPUT Reverse voltage Forward current IF 60 Surge current IFSM 1.5 A Power dissipation Pdiss 100 mW 1.33 mW/°C Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter collector breakdown voltage BVECO 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW 2.0 mW/°C Collector current Power dissipation t < 1.0 ms Derate linearly from 25 °C www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C COUPLER Junction temperature Soldering temperature (2) 2.0 mm distance from case bottom Package power dissipation ILD615 400 mW Derate linearly from 25 °C 5.33 mW/°C Package power dissipation ILQ615 500 mW Derate linearly from 25 °C 6.67 mW/°C Isolation test voltage t = 1.0 s VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm RIO ≥ 1012 Ω RIO ≥ Ω VIO = 500 V, Tamb = 25 °C Isolation resistance VIO = 500 V, Tamb = 100 °C 1011 Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.3 UNIT INPUT Forward voltage IF = 10 mA VF 1.0 1.15 Breakdown voltage IR = 10 µA VBR 6.0 30 Reverse current Capacitance V V VR = 6.0 V IR 0.01 VR = 0 V, f = 1.0 MHz CO 25 pF RTHJL 750 K/W VCE = 5.0 V, f = 1.0 MHz CCE 6.8 VCE = 10 V ICEO 2.0 50 nA 5.0 100 nA Thermal resistance, junction to lead 10 µA OUTPUT Collector emitter capacitance Collector emitter leakage current, -1, -2 Collector emitter leakage current, -3, -4 pF VCE = 10 V ICEO Collector emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V Emitter collector breakdown voltage IE = 0.1 mA BVECO 7.0 V Thermal resistance, junction to lead RTHJL 500 K/W PACKAGE TRANSFER CHARACTERISTICS Channel/channel CTR match IF = 10 mA, VCE = 5.0 V CTRX/CTRY VIO = 0 V, f = 1.0 MHz CIO VIO = 500 V, TA = 25 °C RS 1 to 1 2 to 1 COUPLER Capacitance (input to output) Insulation resistance Channel to channel isolation 0.8 1012 500 1014 pF Ω VAC Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83652 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 3 ILD615/ILQ615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART ILD615-1 ILQ615-1 ILD615-2 Current transfer ratio (collector emitter saturated) IF = 10 mA, VCE = 0.4 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ615-1 ILD615-2 IF = 1.0 mA, VCE = 5.0 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 Current transfer ratio (collector emitter) ILD615-1 ILQ615-1 ILD615-2 IF = 10 mA, VCE = 5.0 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 SYMBOL MIN. TYP. MAX. UNIT CTRCEsat 25 % CTRCEsat 40 % CTRCEsat 60 % CTRCEsat 100 % CTRCE 13 30 % CTRCE 22 45 % CTRCE 34 70 % CTRCE 56 90 % CTRCE 40 60 80 % CTRCE 63 80 125 % CTRCE 100 150 200 % CTRCE 160 200 320 % TYP. MAX. UNIT SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. NON-SATURATED Current VCC = 5.0 V, RL = 75 Ω, 50 % of VPP IF 10 mA Turn-on time VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Turn-off time VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H to L VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L to H VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs IF 20 mA IF 10 mA IF 10 mA IF 5.0 mA SATURATED ILD615-1 ILQ615-1 ILD615-2 Current VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SATURATED ILD615-1 ILQ615-1 ILD615-2 Turn-on time VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ1615-1 ILD615-2 Rise time VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ615-1 ILD615-2 Turn-off time VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ615-1 ILD615-2 Fall time VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 ILD615-1 ILQ615-1 ILD615-2 Propagation H to L VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 Document Number: 83652 Rev. 1.5, 20-Dec-07 ton 3.0 µs ton 4.3 µs ton 4.3 µs ton 6.0 µs tr 2.0 µs tr 2.8 µs tr 2.8 µs tr 4.6 µs toff 18 µs toff 25 µs toff 25 µs toff 25 µs tf 11 µs tf 14 µs tf 14 µs tf 15 µs tPHL 1.6 µs tPHL 2.6 µs tPHL 2.6 µs tPHL 5.4 µs For technical questions, contact: [email protected] www.vishay.com 5 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SATURATED ILD615-1 ILQ615-1 ILD615-2 VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V Propagation L to H ILQ615-2 ILD615-3 ILQ615-3 ILD615-4 ILQ615-4 tPLH 8.6 µs tPLH 7.2 µs tPLH 7.2 µs tPLH 7.4 µs COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION SYMBOL Common mode rejection output high VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA CMH 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA CML 5000 V/µs CCM 0.01 pF Common mode coupling capacitance MIN. TYP. MAX. UNIT TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified VCC = 5 V F = 10 kHz, DF = 50 % IF = 10 mA VCC = 5 V RL VO VO RL = 75 Ω F = 10 kHz, DF = 50 % iild615_02 iild615_01 Fig. 1 - Non-Saturated Switching Timing www.vishay.com 6 Fig. 2 - Saturated Switching Timing For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors IF PLED - LED Power (mW) 200 t PLH t PLH VO tS 50 % tD t off t on iild615_03 100 50 0 - 60 - 40 - 20 0 20 40 60 80 iild615_06 Tamb - Ambient Temperature (°C) tF tR 150 100 Fig. 6 - Maximum LED Power Dissipation Fig. 3 - Non-Saturated Switching Timing 1.4 IF VF - Forward Voltage (V) 1.3 tD tR VO t PLH Tamb = - 55 °C 1.2 Tamb = 25 °C 1.1 1.0 0.9 Tamb = 85 °C 0.8 0.7 V TH = 1.5 V 0.1 iild615_04 100 iild615_07 Fig. 7 - Forward Voltage vs. Forward Current Fig. 4 - Saturated Switching Timing 120 10000 100 If(pk) - Peak LED Current (mA) IF - Maximum LED Current (mA) 1 10 IF - Forward Current (mA) tF tS t PHL 80 60 TJ (max.) = 100 °C 40 20 iild615_05 0 - 60 - 40 - 20 0 20 40 60 80 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 100 Document Number: 83652 Rev. 1.5, 20-Dec-07 t 1000 DF = τ/t 10 10 - 6 10 - 5 Tamb - Ambient Temperature (°C) iild615_08 Fig. 5 - Maximum LED Current vs. Ambient Temperature τ Duty Factor 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 t - LED Pulse Duration (s) Fig. 8 - Peak LED Current vs. Pulse Duration, τ For technical questions, contact: [email protected] www.vishay.com 7 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors 2.0 150 100 50 0 - 60 - 40 - 20 0 20 40 60 80 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 50 °C 0.0 100 0.1 1 10 100 IF - LED Current (mA) iild615_12 Fig. 9 - Maximum Detector Power Dissipation Fig. 12 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF Rth = 500 °C / W 100 10 25 °C 50 °C 75 °C 90 °C 1 CTRNF - Normalized CTR Factor 2.0 1000 Normalized to: VCE = 10 V, I F = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 70 °C 0.0 0.1 0.1 10 1 100 0.1 1 10 100 IF - LED Current (mA) VCE - Collector Emitter Voltage (V) iild615_13 iild615_10 Fig. 10 - Maximum Collector Current vs. Collector Voltage Fig. 13 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF 2.0 CTRNF - Normalized CTR Factor 2.0 CTRNF - Normalized CTR Factor CTRce(sat) VCE = 0.4 V Tamb - Ambient Temperature (°C) iild615_09 I CE - Collector Current (mA) Normalized to: VCE = 10 V, I F = 5 mA, CTRNF - Normalized CTR Factor PDET - Detector Power (mW) 200 Normalized to: VCE = 10 V, I F = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 25 °C Normalized to: VCE = 10 V, I F = 5mA, CTRce(sat) VCE = 0.4 V 1.5 1.0 NCTRce 0.5 NCTRce(sat) TA = 100 °C 0.0 0.0 0.1 1 10 100 0.1 iild615_11 10 100 iild615_14 Fig. 11 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF www.vishay.com 8 1 IF - LED Current (mA) IF - LED Current (mA) Fig. 14 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) 1000 30 25 50 °C 20 15 70 °C 25 °C 85 °C 10 5 0 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V 2.0 100 tpLH 10 1.5 tpHL 1 0 10 20 40 30 50 60 1.0 0.1 IF - LED Current (mA) iild615_15 tpHL - Propagation High-Low (μs) tpLH - Propagation Low-High(μs) 35 ICE - Collector Current (mA) Vishay Semiconductors 1 10 100 R L - Collector Load Resistor (kΩ) iild615_18 10 tpLH - Propagation Low - High (μs) ICEO - Collector Emittet (nA) 10 5 4 10 3 10 2 Vce = 10 V 10 1 Typical 10 0 10 - 1 10 - 2 - 20 0 20 40 60 Fig. 18 - -2, -3, Propagation Delay vs. Collector Load Resistor 80 1000 100 10 1.5 tpHL 1.0 1 10 100 RL - Collector Load Resistor (kΩ) Tamb - Ambient Temperature (°C) iild615_19 iild615_16 Fig. 16 - Collector Emitter Leakage vs. Temperature 1000 Fig. 19 - -4, Propagation Delay vs. Collector Load Resistor 4.0 IF = 10 mA VCC = 5 V, Vth = 1.5 V 3.5 3.0 100 tpLH 2.5 2.0 10 tpHL 1.5 1 tpHL - Propagation High-Low (μs) tpLH - Propagation Low-High (μs) 2.0 tpLH 1 0.1 100 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL - Propagation Low - High (μs) Fig. 15 - Collector Emitter Current vs. Temperature and LED Current 1.0 0.1 1 10 100 R L - Load Resistor (kΩ) iild615_17 Fig. 17 - -1, Propagation Delay vs. Collector Load Resistor Document Number: 83652 Rev. 1.5, 20-Dec-07 For technical questions, contact: [email protected] www.vishay.com 9 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) Pin one ID 4 3 2 1 5 6 7 8 0.255 (6.48) 0.268 (6.81) ISO method A 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031 (0.79) 4° typ. 0.130 (3.30) 0.150 (3.81) 0.050 (1.27) 0.230 (5.84) 10° 0.020 (0.51) 0.018 (0.46) 0.250 (6.35) 0.130 (3.30) 3° to 9° 0.035 (0.89) 0.022 (0.56) 0.110 (2.79) 0.008 (0.20) 0.100 (2.54) typ. 0.012 (0.30) i178006 Pin one ID 8 7 6 5 4 3 2 1 0.255 (6.48) 0.265 (6.81) 9 10 11 12 13 14 15 16 ISO method A 0.779 (19.77) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031 (0.79) 0.130 (3.30) 0.150 (3.81) 4° 0.018 (0.46) 0.022 (0.56) 0.020 (0.51) 0.035 (0.89) 0.100 (2.54) typ. 0.050 (1.27) 0.110 (2.79) 0.130 (3.30) 10° typ. 0.230 (5.84) 0.250 (6.35) 3° to 9° 0.008 (0.20) 0.012 (0.30) i178007 www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 ILD615/ILQ615 Optocoupler, Phototransistor Output (Dual, Quad Channel) Vishay Semiconductors Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83652 Rev. 1.5, 20-Dec-07 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 www.vishay.com 11 ILD615/ILQ615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 12 For technical questions, contact: [email protected] Document Number: 83652 Rev. 1.5, 20-Dec-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1