J/SST270 Series Vishay Siliconix P-Channel JFETs J270 J271 SST270 SST271 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST270 0.5 to 2.0 30 6 –2 J/SST271 1.5 to 4.5 30 8 –6 FEATURES BENEFITS APPLICATIONS D D D D D Full Performance from Low-Voltage Power Supply: Down to 2 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality, Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers D High-Side Switching Low Cutoff Voltage: J270 <2 V High Input Impedance Very Low Noise High Gain DESCRIPTION The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation. provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package TO-226AA (TO-92) D 1 G 2 S TO-236 (SOT-23) D 1 S 2 3 G 3 Top View Top View J270 J271 SST270 (S0)* SST271 (S1)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70258 S-04233—Rev. D, 02-Jul-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 8-1 J/SST270 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST270 Parameter Test Conditions Typa V(BR)GSS IG = 1 mA , VDS = 0 V 45 VGS(off) VDS = –15 V, ID = –1 nA IDSS VDS = –15 V, VGS = 0 V Symbol Min J/SST271 Max Min Max Unit 0.5 2.0 1.5 4.5 –2 –15 –6 –50 mA 200 pA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb VGS = 20 V, VDS = 0 V Gate Reverse Current IGSS Gate Operating Current 30 10 30 200 V 5 TA = 125_C IG VDG = –15 V, ID = –1 mA 10 Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –10 Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 nA pA V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss 6 VDS = –15 V, VGS = 0 V f = 1 kHz 15 8 200 18 mS 500 mS 20 Common-Source Reverse Transfer Capacitance Crss VDS = –15 V, VGS = 0 V f = 1 MHz Equivalent Input Noise Voltage en VDG = –10 V, VGS = 0 V f = 1 kHz pF 4 nV⁄ √Hz 20 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. PSCIA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage –100 250 rDS –60 120 –40 80 –20 40 rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V 0 0 2 4 6 8 VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com 10 gfs – Forward Transconductance (mS) –80 15 200 gfs 12 150 gos 9 100 6 50 gos – Output Conductance (µS) 160 0 8-2 18 IDSS IDSS – Saturation Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) 200 gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz 3 0 2 4 6 8 0 10 VGS(off) – Gate-Source Cutoff Voltage (V) Document Number: 70258 S-04233—Rev. D, 02-Jul-01 J/SST270 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics –2 –2 VGS = 0 V 0.2 V –1.6 I D – Drain Current (mA) I D – Drain Current (mA) –1.6 1.0 V VGS = 0 V 0.4 V 0.6 V –1.2 –0.8 0.8 V 1.5 V 0.5 V –1.2 2.0 V –0.8 –0.4 –0.4 VGS(off) = 1.5 V VGS(off) = 3 V 0 0 0 –0.2 –0.4 –0.6 –0.8 0 –1 –0.1 –0.2 –0.3 –0.4 –0.5 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Output Characteristics Capacitance vs. Gate-Source Voltage –25 30 VGS(off) = 3 V VDS = 0 V f = 1 MHz VGS = 0 V 24 0.5 V Capacitance (pF) I D – Drain Current (mA) –20 –15 1.0 V –10 1.5 V 18 Ciss 12 Crss –5 6 2.0 V 0 0 –4 –8 –12 –16 0 –20 0 VDS – Drain-Source Voltage (V) 4 Transfer Characteristics 12 16 20 Transfer Characteristics –10 –40 VGS(off) = 1.5 V VDS = –15 V VGS(off) = 3 V VDS = –15 V –32 I D – Drain Current (mA) –8 I D – Drain Current (mA) 8 VGS – Gate-Source Voltage (V) TA = –55_C –6 25_C –4 125_C –2 TA = –55_C –24 25_C –16 –8 125_C 0 0 0 0.2 0.4 0.6 VGS – Gate-Source Voltage (V) Document Number: 70258 S-04233—Rev. D, 02-Jul-01 0.8 1.0 0 1 2 3 4 5 VGS – Gate-Source Voltage (V) www.vishay.com 8-3 J/SST270 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs. Drain Current Output Conductance vs. Drain Current 100 100 VGS(off) = 3 V VDS = –15 V f = kHz gos – Output Conductance (µS) gfs – Forward Transconductance (mS) VGS(off) = 3 V TA = –55_C 10 25_C 125_C 1 TA = –55_C 125_C 10 25_C VDS = –15 V f = kHz 1 –0.1 –1 –10 –0.1 –1 ID – Drain Current (mA) –10 ID – Drain Current (mA) On-Resistance vs. Temperature TA = 25_C 200 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) 300 On-Resistance vs. Drain Current 250 VGS(off) = 1.5 V 150 3V 100 5V 50 0 ID = –1 mA rDS changes X 0.7%/_C 240 180 VGS(off) = 1.5 V 3V 120 5V 60 0 –55 –1 –10 –35 –15 5 –100 25 45 65 85 105 125 TA – Temperature (_C) ID – Drain Current (mA) Noise Voltage vs. Frequency Gate Leakage Current 100 nA 100 10 nA –1 mA I G – Gate Leakage en – Noise Voltage nV / Hz ID = –0.1 mA –1 mA 10 TA = 125_C 1 nA IGSS @ 125_C 100 pA –10 mA 10 pA TA = 25_C IGSS @ 25_C 1 pA –1 mA VDS = –10 V 0.1 pA 1 10 100 1k f – Frequency (Hz) www.vishay.com 8-4 ID = –10 mA 10 k 100 k 0 –10 –20 –30 –40 –50 VDG – Drain-Gate Voltage (V) Document Number: 70258 S-04233—Rev. D, 02-Jul-01