VISHAY J/SST112

J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111
SST111
J112
SST112
J113
SST113
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
J/SST111
–3 to –10
30
5
4
J/SST112
–1 to –5
50
5
4
J/SST113
v–3
100
5
4
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low On-Resistance: 111 < 30 W
Fast Switching—tON: 4 ns
Low Leakage: 5 pA
Low Capacitance: 3 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
D
1
S
2
TO-236 (SOT-23)
D
1
3
G
S
G
2
3
Top View
Top View
J111
J112
J113
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = –1 mA , VDS = 0 V
–55
–35
VGS(off)
VDS = 5 V, ID = 1 mA
–3
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
20
Gate Reverse Current
IGSS
Parameter
Max
J/SST112
Min
Max
J/SST113
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Drain Cutoff Current
–35
V
VGS = –15 V, VDS = 0 V
Gate Operating Current
–35
IG
ID(off)
–0.005
VDG = 15 V, ID = 10 mA
–5
VDS = 5 V, VGS = –10 V
0.005
TA = 125_C
rDS(on)
VGS = 0 V, VDS = 0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
–1
–5
5
–1
–3
2
–1
mA
–1
nA
–3
TA = 125_C
Drain-Source On-Resistance
–10
pA
1
1
1
nA
3
30
50
100
W
0.7
V
6
mS
25
mS
Dynamic
Common-Source Forward
Transconductance
gfs
Common-Source
Output Conductance
gos
Drain-Source On-Resistance
rds(on)
Common-Source
Input Capacitance
Ciss
Common-Source Reverse Transfer
Capacitance
Crss
Equivalent Input
Noise Voltage
en
VDS = 20 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = -10 V
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
30
50
100
7
12
12
12
3
5
5
5
W
pF
3
nV⁄
√Hz
Switching
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
2
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
7-2
2
ns
6
15
NCB
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
80
160
IDSS
rDS
60
120
40
80
20
40
0
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
–4
–6
–8
TA = 25° C
80
VGS(off) = –2 V
60
40
–4 V
–8 V
20
0
0
–2
0
On-Resistance vs. Drain Current
100
200
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
100
–10
1
10
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Turn-On Switching
On-Resistance vs. Temperature
5
tr approximately independent of ID
VDD = 5 V, RG = 50 Ω
VGS(L) = –10 V
ID = 1 mA
rDS changes X 0.7%/_C
160
4
tr
120
Switching Time (ns)
rDS(on) – Drain-Source On-Resistance ( Ω )
200
VGS(off) = –2 V
80
–4 V
–8 V
40
3
td(on) @
ID = 12 mA
2
td(on) @
ID = 3 mA
1
0
0
–55 –35
5
–15
25
45
65
85
105
0
125
TA – Temperature ( _C)
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
Turn-Off Switching
30
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
f = 1 MHz
24
18
Capacitance (pF)
24
Switching Time (ns)
100
tf @
VGS(off) = –2 V
12
18
12
td(off)
Ciss @ VDS = 0 V
6
6
tf @
VGS(off) = –8 V
Crss @ VDS = 0 V
0
0
0
2
4
6
ID – Drain Current (mA)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
8
10
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
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7-3
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Noise Voltage vs. Frequency
100
50
gfs – Forward Transconductance (mS)
Hz
en – Noise Voltage nV /
ID = 1 mA
ID = 10 mA
1
40
gfs
30
250
20
10
0
10
100
1k
10 k
0
0
100 k
f – Frequency (Hz)
1 mA
–10
gig
10 mA
big
(mS)
1 mA
IGSS @ 25_C
1
TA = 25_C
I
G
–8
10
100 pA
10 pA
–6
VDG = 10 V
ID = 10 mA
TA = 25_C
ID = 10 mA
TA = 125_C
–4
Common-Gate Input Admittance
100
IGSS @ 125_C
1 nA
–2
VGS(off) – Gate-Source Cutoff Voltage (V)
Gate Leakage Current
10 nA
– Gate Leakage
gos
1 pA
0.1 pA
0.1
0
6
12
18
30
24
100
200
500
1000
f – Frequency (MHz)
VDG – Drain-Gate Voltage (V)
Common-Gate Forward Admittance
Common-Gate Reverse Admittance
100
10
VDG = 10 V
ID = 10 mA
TA = 25_C
VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg
bfg
–brg
1.0
10
(mS)
(mS)
gfg
+grg
–grg
0.1
1
0.01
0.1
100
200
500
f – Frequency (MHz)
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7-4
1000
100
200
500
1000
f – Frequency (MHz)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
g os – Output Conductance (mS)
10
500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
VDS = 10 V
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
Output Characteristics
100
100
VDG = 10 V
ID = 10 mA
TA = 25_C
VGS(off) = –4 V
80
ID – Drain Current (mA)
bog
(mS)
10
gog
1
VGS = 0 V
60
–0.5
40
–1.0
–1.5
20
–2.0
–2.5
0.1
0
100
200
500
1000
0
2
4
10
8
VDS – Drain-Source Voltage (V)
f – Frequency (MHz)
Output Characteristics
Transfer Characteristics
40
100
VGS(off) = –4 V
VGS(off) = –4 V
VDS = 20 V
80
VGS = 0 V
–0.5
24
–1.0
16
–1.5
–2.0
8
ID – Drain Current (mA)
32
ID – Drain Current (mA)
6
TA = –55_C
60
25_C
40
20
–2.5
125_C
–3.0
0
0
0
0.2
0.4
0.6
1.0
0.8
0
–1
VDS – Drain-Source Voltage (V)
–2
–3
VGS – Gate-Source Voltage (V)
VDD
SWITCHING TIME TEST CIRCUIT
J/SST111
J/SST112
J/SST113
VGS(L)
–12 V
–7 V
–5 V
RL*
800 W
1600 W
3200 W
ID(on)
12 mA
6 mA
3 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
–5
–4
RL
OUT
VGS(H)
VGS(L)
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
1 kW
51 W
VGS
Scope
51 W
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7-5
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www.datasheetcatalog.com
Datasheets for electronics components.