DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. 1 handbook, halfpage 2 3 d g PINNING 1 = source 2 = gate 3 = drain s MAM388 Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −IG max. 50 mA Ptot max. 400 mW Total power dissipation up to Tamb = 50 °C J174 J175 J176 J177 Drain current −VDS = 15 V; VGS = 0 −IDSS min. max. 20 135 7 70 2 35 1.5 20 mA mA RDS on max. 85 125 250 300 Ω Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 April 1995 2 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (DC) −IG max. 50 mA Ptot max. 400 mW Total power dissipation up to Tamb = 50 °C Storage temperature range Tstg Junction temperature Tj Rth j-a −65 to +150 °C max. 150 °C = 250 K/W THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified J174 J175 J176 J177 Gate cut-off current VGS = 20 V; VDS = 0 IGSS max. 1 1 1 1 nA −IDSX max. 1 1 1 1 nA −IDSS min. 20 7 2 1.5 mA max. 135 70 35 20 mA V(BR)GSS min. 30 30 30 30 V min. 5 3 1 0.8 V max. 10 6 4 2.25 V max. 85 125 250 300 Ω Drain cut-off current −VDS = 15 V; VGS = 10 V Drain current −VDS = 15 V; VGS = 10 V Gate-source breakdown voltage IG = 1 µA; VDS = 0 Gate-source cut-off voltage −ID = 10 nA; VDS = −15 V VGS off Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 April 1995 RDSon 3 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Cis typ. 8 pF VGS = VDS = 0 Cis typ. 30 pF Crs typ. 4 pF Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Switching times (see Fig.2 + 3) J174 J175 J176 J177 Delay time td typ. 2 5 15 20 ns Rise time tr typ. 5 10 20 25 ns Turn-on time ton typ. 7 15 35 45 ns Storage time ts typ. 5 10 15 20 ns Fall time tf typ. 10 20 20 25 ns typ. 15 30 35 45 ns −VDD 10 6 6 6 V VGS off 12 8 6 3 V 560 1200 0 0 Turn-off time toff Test conditions: RL VGS on −VDD handbook, halfpage VGSoff 50 Ω 0 V 90% 10% RL 10% 10% OUTPUT D.U.T 90% 50 Ω 90% tr tf ts MBK292 Fig.2 Switching times test circuit. April 1995 0 INPUT Vout Vin 2000 2900 Ω td Fig.3 Input and output waveforms; td + tr = ton ; ts + tf = toff. 4 MBK293 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6