Data Sheet No. PD 96934A IRIS-A6159 Features INTEGRATED SWITCHER •Small sized 8-pin DIP type full molded package, optimum IC for lowheight SMPS •Off-timer circuit is provided on the monolithic control IC Package Outline • Low start-up circuit current (10uA typ) •Low circuit current at operation (1.5mA typ) • Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. •Built-in Start-up circuit (the power loss in the start-up circuit is reduced by cutting off the start-up circuit after the IC starts its operation.) •Auto Burst Stand-by (realizing input power<0.1W at no load) •Auto Bias Function (stable burst operation without the interference on transformer) •Two operational modes by auto switching functions For normal operation: PRC mode For stand-by operation (at light load): Burst mode 8 Lead PDIP •Built-in Leading Edge Blanking Function •Built-in constant voltage drive circuit Key Specifications •Various kinds of protection functions MOSFET RDS(ON) Pulse-by-pulse Overcurrent Protection (OCP) Type VDSS(V) MAX ACinput(V) Overload Protection with auto recovery (OLP) 230±15% Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) 85 to 264 IRIS-A6159 650 6Ω Pout(W) Note 1 7 5 Descriptions IRIS-A6159 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram 8 D 7 D 5 6 NC Startup IRIS-A6159 OCP 1 Vcc 2 GND 3 FB 4 Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above value. www.irf.com 1 IRIS-A6159 Absolute Maximum Ratings (Ta=25℃ ℃) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current 8-3 1.8 A EAS VOCP Single pulse avalanche energy *2 O.C.P. pin Voltage 8-3 1-3 24 -0.5~6 mJ V VCC Input voltage for control part 2-3 35 V VFB/OLP F.B/O.L.P pin voltage 4-3 -0.5~10 V Vstartup P D1 Startup pin voltage 5-3 -0.3~600 V Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 8-3 1.35 W 2-3 0.15 W - -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ P D2 TF Top Tstg Tch Terminals Max. Ratings 8-3 1.8 Units A Note Single Pulse V1-3=0.86V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=1.8A *5 Specified by Vcc×ICC Refer to recommended operating temperature *1 Refer to MOSFET A.S.O curve *2 Refer to MOSFET Tch-EAS curve *3 Refer to MOSFET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC *5 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm) www.irf.com 2 IRIS-A6159 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Definition VCC(ON) Operation start voltage VCC(OFF) Operation stop voltage MIN 16 Ratings TYP 17.5 MAX 19.2 Units V 9 10 11 V Test Conditions VCC=0→19.2V VCC=19.2→9V ICC(ON) Circuit current in operation - - 4 mA - ICC(OFF) Circuit current in non-operation - - 50 µA VCC=14V VCC(bias) - Auto bias threshold voltage 9.6 10.6 11.6 V VCC=20→9.6V Vcc(bias) - Vcc(OFF) Maximum OFF time O.C.P. threshold voltage 0.2 7.3 0.69 8 0.77 8.7 0.86 V µsec V - Leading edge blanking time Burst threshold voltage O.L.P. threshold voltage 200 0.7 6.5 320 0.79 7.2 480 0.88 7.9 nsec V V - Out-flow current at O.L.P operation Maximum F.B. current 18 227 26 300 35 388 µA µA - 340 790 1230 µA VCC=15V - - 30 µA - O.V.P operation voltage 28.7 31.2 34.1 V VCC=0→34.1V Latch circuit sustaining current *6 Latch circuit release voltage *6 6.6 7.3 200 8 VCC=34.1→8.5V 135 - - µA V ℃ TOFF(MAX) VOCP Tbw Vburst VOLP IOLP IFB(MAX) IST ART UP Startup current IST ART (leak) Startup circuit leakage current VCC(OVP ) ICC(H) VCC(La.OFF) Tj(TSD) Thermal shutdown operating temperature VCC=34.1→6.6V - *6 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 650 - - V V1- 3 =0V(short) ID=300µA VDSS Drain-to-Source breakdown voltage VDS =650V Drain leakage current IDSS RDS(ON) On-resistance tf Switching time - - 300 6 250 µA Ω nsec V1- 3 =0V(short) ID=0.4A Between channel and θch-F Thermal resistance *7 - - 52 ℃/W internal frame *7 Internal frame temperature (TF) is measured at the root of the Pin 3. www.irf.com 3 IRIS-A6159 IRIS-A6159 IRIS-A6159 MOSFET A.S.O. Curve A.S.O. temperature derating coefficient curve Single Pulse 100 80 Drain Current ID[A] 10 60 40 Drain current limit by ON resistance 0.1ms 1ms 1 0.1 20 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0 0 20 40 60 80 100 0.01 120 1 Internal frame temperature TF [℃] 10 100 1000 Drain-to-Source Voltage VDS[V] IRIS-A6159 A valanche energy derating curve 100 EAS temperature derating coefficient [%] A.S.O. temperature derating coefficient[%] 100 Ta=25ºC 80 60 40 20 0 25 50 75 100 125 150 Channel temperature Tch [℃ ] www.irf.com 4 IRIS-A6159 IRIS-A6159 MOSFET Ta-PD1 Curve IRIS-A6159 MIC TF-PD2 Curve 1.6 0.16 PD2=0.15[W] 1.4 0.14 1.2 0.12 Power dissipation PD2[W] Power dissipation PD1[W] PD1=1.35[W] 1 0.8 0.6 0.4 0.1 0.08 0.06 0.04 0.2 0.02 0 0 20 40 60 80 0 100 120 140 160 0 Ambient temperature Ta[℃] 20 40 60 80 100 120 Internal frame temperature TF[℃] 140 10m 100m IRIS-A6159 Transient thermal resistance curve Transient thermal resistance θch-a[℃/W] 10 1 0.1 0.01 1µ 10µ 100µ 1m time t [sec] www.irf.com 5 IRIS-A6159 Block Diagram Startup Vcc 2 5 OVP UVLO Internal Bias ＋ － Latch ＋ － Delay TSD 8 D Power MOS FET OFF Timer 7 D Drive PWM Latch ＋ S Q R OLP Bias ＋ － － － ＋ Burst Blanking ＋ － Discharge FB － OCP 1 Source/OCP ＋ － ＋ Buffer 3 GND 4 FB/OLP Lead Assignments Description Source Pin/OCP Power supply Pin Function MOSFET source / Over current Protection Input of power supply for control circuit 3 Symbol S/OCP VCC GND Ground Pin 4 5 6 7 8 FB/OLP Startup N.C. Drain Drain Feedback/OLP pin Startup pin Drain Pin Drain Pin Ground Input of constant voltage control signal/over load protection signal Input of Startup current Not Connected MOSFET drain MOSFET drain Pin No. Pin Assignment (Top View) S/OCP 1 8 Drain VCC 2 7 Drain GND 3 6 N.C. FB/OLP 4 5 Startup 1 2 Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit www.irf.com 6 IRIS-A6159 Case Outline 8 7 6 5 A6159 a b c IR 1 2 3 4 a. Type Number b. Lot Number 1st letter：The last digit of year 2nd letter：Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letter：Week 1～3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com 7