PHILIPS BUK218-50DC

Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
QUICK REFERENCE DATA
DESCRIPTION
Monolithic dual channel high side
protected power switch in
TOPFET2 technology assembled in
a 7 pin plastic surface mount
package.
SYMBOL
PARAMETER
IL
Nominal load current (ISO)
SYMBOL
PARAMETER
VBG
IL
Tj
RON
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance, Tj = 25˚C
MIN.
UNIT
8
A
MAX.
UNIT
50
16
150
40
V
A
˚C
mΩ
APPLICATIONS
General purpose switch for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Overload and
short circuit protection
Self resetting overcurrent
protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
INPUT 1
BATT
INPUT 2
STATUS
LOAD 1
CONTROL &
PROTECTION
CIRCUITS
GROUND
LOAD 2
RG
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427
PIN
1
2
3
4
5
6
7
mb
PIN CONFIGURATION
DESCRIPTION
load 1
ground
input 1
connected to mb
status
input 2
load 2
battery
SYMBOL
mb
B
I1
L1
DUAL
HSTF
I2
L2
S
G
1234567
Fig. 2.
Fig. 3.
CONVENTION
Positive currents flow into pins, except for load and ground pins.
October 2001
1
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
VBG
Continuous supply voltage
IL
Continuous load current per channel
PD
Total power dissipation
Tstg
CONDITIONS
MIN.
MAX.
UNIT
0
50
V
Tmb ≤ 135˚C
-
8
A
Tmb ≤ 25˚C
-
83.3
W
Storage temperature
-55
175
˚C
Tj
Continuous junction temperature1
-40
150
˚C
VGB
Reverse battery voltages2
Continuous reverse voltage
-
16
V
VGB
Peak reverse voltage
-
32
V
3.2
-
kΩ
Application information
RI, RS
External resistors3
II
Input and status currents
Continuous input current
-5
5
mA
IS
Continuous status current
-5
5
mA
II
IS
Repetitive peak input current
Repetitive peak status current
δ ≤ 0.1, tp = 300 µs
δ ≤ 0.1, tp = 300 µs
-50
-50
50
50
mA
mA
Inductive load clamping
VBG = 13 V, IL = 8 A
Non-repetitive clamping energy (one
channel)
Tj = 150˚C prior to turn-off
-
150
mJ
MIN.
MAX.
UNIT
-
2
kV
EBL
to limit input, status currents
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.
The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the Tj rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
October 2001
2
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
2.4
1.2
3
1.5
K/W
K/W
MIN.
TYP.
MAX.
UNIT
Thermal resistance1
Rth j-mb
Junction to mounting base
per channel
both channels
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VBG
Clamping voltages
Battery to ground
IG = 1 mA
45
55
65
V
VBL
VGL
Battery to load per channel
Ground to load2
IL = IG = 1 mA
IL = 10 mA
50
18
55
23
65
28
V
V
IL = 10 A; tp = 300 µs
20
25
30
V
5.5
-
35
V
-
-
20
µA
Tmb = 25˚C
-
0.1
-
1
10
µA
µA
Tmb = 25˚C
Supply voltage
battery to ground
3
VBG
Operating range
-
IB
Currents
Total quiescent current4
9 V ≤ VBG ≤ 35 V
VLG = 0 V
IL
Off-state load current per
VBL = VBG
IG
channel
Operating current
one channel on
-
0.1
1.8
1
3
µA
mA
both channels on
VBL = 0.5 V; Tmb = 85˚C
8
3.6
-
6
-
mA
A
IG = -200 mA; tp = 300 µs
40
75
100
Ω
5
IL
Nominal load current
RG
Effective internal ground
resistance6
Resistances per channel
RON
RON
On-state resistance
On-state resistance
VBG
IL
tp7
Tj
9 to 35 V
10 A
300 µs
25˚C
-
30
40
mΩ
5A
150˚C
300 µs 25˚C
-
60
50
80
60
mΩ
mΩ
150˚C
-
100
120
mΩ
5.5 V
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
October 2001
3
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
INPUT CHARACTERISTICS
5.5 V ≤ VBG ≤ 35 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
II
Input current
VIG = 5 V
20
60
160
µA
VIG
Input clamping voltage
II = 200 µA
5.5
7
8.5
V
VIG(ON)
Input turn-on threshold voltage
-
2.1
3
V
VIG(OFF)
Input turn-off threshold voltage
1.2
1.8
-
V
∆VIG
Input turn-on hysteresis
0.15
0.3
0.5
V
II(ON)
Input turn-on current
VIG = 3 V
-
-
100
µA
II(OFF)
Input turn-off current
VIG = 1.2 V
12
-
-
µA
MIN.
TYP.
MAX.
UNIT
1.5
2.5
3.5
V
-
0.8
1.5
mA
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25˚C.
SYMBOL
PARAMETER
CONDITIONS
Open circuit detection
VLG(OC)
Load ground threshold voltage
VBG ≥ 9 V
IB(OC)
Supply quiescent current per
OC channel
VBG = VLG = 16 V
open circuit detected,
other channel off
-IL(OC)
td(OC)
Load ground current per
VLG = 16 V
-
200
300
µA
channel
VLG = 3.5 V
-
22
40
µA
Status delay time
input low to status low
-
65
100
µs
-
10
-
kΩ
Application information
Rext
External load pull-up resistance Vext = 5 V
per channel
October 2001
4
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2
4.2
5.3
V
0.1
0.5
1
V
Undervoltage
VBG(UV)
Low supply threshold voltage1
∆VBG(UV)
Hysteresis
Overvoltage
VBG(OV)
High supply threshold voltage2
35
40
45
V
∆VBG(OV)
Hysteresis
0.4
1
2
V
IBG(OV)
Operating current per channel
-
1
2
mA
VBG > VBG(OV)
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
Overload protection
VBL = VBG; tp = 300 µs
Load current limiting
VBG ≥ 8 V
VBG = 5.5 V
Short circuit load protection
Tmb ≤ 125˚C prior to overload3
PD(TO)
Overload power threshold
for protection4
TDSC
Characteristic time
which determines trip time5
IL(lim)
MIN.
TYP.
MAX.
UNIT
18
15
30
27
42
42
A
A
100
150
200
W
-
200
500
µs
150
170
190
˚C
3
10
20
˚C
Overtemperature protection
Tj(TO)
Threshold junction temperature
∆Tj(TO)
Hysteresis6
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 Normal operation will be resumed when PD < PD(TO) and Tj < Tj(TO).
5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
October 2001
5
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
VSG
VSG(LO)
Status clamping voltage
Status low voltage
Status leakage current
IS
MIN.
TYP.
MAX.
UNIT
IS = 100 µA
IS = 100 µA
5.5
-
7
0.7
8.5
0.9
V
V
IS = 250 µA
VSG = 5 V
-
-
1.1
10
V
µA
-
0.1
1
µA
5
10
15
mA
-
47
-
kΩ
Tmb = 25˚C
Status saturation current1
IS(SAT)
VSG = 5 V
Application information
External pull-up resistor
RS
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
INPUT
SUPPLY
LOAD 1
LOAD
OUTPUT
STATUS
DESCRIPTION
LOAD 2
1
2
UV
OV OC SC OT OC SC OT
1
2
L
L
0
X
0
X
X
0
X
X
OFF OFF
H
both off & normal
L
L
0
X
1
X
X
X
X
X
OFF OFF
L
both off, one/both OC or short to V+
L
H
0
X
1
X
X
0
0
0
OFF
ON
L
one off & OC, other on & normal
H
L
0
0
0
0
0
0
0
0
ON
OFF
H
one on & normal, other off & normal
H
H
0
0
0
0
0
0
0
0
ON
ON
H
both on & normal
H
X
1
0
X
X
X
0
X
X
OFF OFF
H
supply undervoltage lockout
H
X
0
1
X
0
0
X
0
0
OFF OFF
H
supply overvoltage shutdown
H
X
0
0
0
1
X
X
X
X
OFF
L
one SC shutdown
H
L
0
0
0
1
X
0
0
X
OFF OFF
L
one SC shutdown, other off & normal
H
H
0
0
0
1
X
0
0
0
OFF
ON
L
one SC shutdown, other on & normal
H
X
0
0
0
0
1
X
X
X
OFF
X
L
one OT shutdown
H
L
0
0
0
0
1
0
0
X
OFF OFF
L
one OT shutdown, other off & normal
H
H
0
0
0
0
1
0
0
0
OFF
L
one OT shutdown, other on & normal
X
ON
KEY TO ABBREVIATIONS
L
H
X
0
1
logic low
logic high
don’t care
condition not present
condition present
UV
OV
OC
SC
OT
undervoltage
overvoltage
open circuit
short circuit
overtemperature
1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
October 2001
6
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω per channel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
td on
During turn-on
Delay time
from input going high
to 10% VL
-
30
-
µs
dV/dton
Rate of rise of load voltage
30% to 70% VL
0.5
1
2
V/µs
t on
Total switching time
to 90% VL
-
100
400
µs
td off
During turn-off
Delay time
from input going low
to 90% VL
-
20
-
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
70% to 30% VL
to 10% VL
0.5
-
1
40
2
200
V/µs
µs
MIN.
TYP.
MAX.
UNIT
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL
PARAMETER
CONDITIONS
Csg
Status capacitance
VSG = 5 V
-
11
15
pF
Cig
Input capacitance
VBG = 13 V
-
15
20
pF
Cbl
Output capacitance
VBL = 13 V
-
265
375
pF
per channel
October 2001
7
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)
SOT427
A
A1
E
D1
mounting
base
D
HD
4
1
Lp
7
b
e
e
e
e
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.27
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-04-18
SOT427
Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
October 2001
8
Rev 2.010
Philips Semiconductors
Product specification
TOPFET dual high side switch
BUK218-50DC
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
October 2001
9
Rev 2.010