PHILIPS PMEM1505PG

PMEM1505PG
PNP transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of an PNP transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG
1.2 Features
n
n
n
n
n
n
300 mW total power dissipation
Current capability up to 0.5 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
u Low collector-emitter saturation voltage
n Diode
u Ultra high-speed switching
u Very low forward voltage
u Guard ring protected
1.3 Applications
n DC-to-DC converters
n General purpose load drivers
n MOSFET drivers
n Inductive load drivers
n Reverse polarity protection circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
−15
V
-
-
−0.5
A
PNP transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
continuous
[1]
Schottky barrier rectifier
VR
continuous reverse voltage
-
-
20
V
IF
continuous forward current
-
-
0.5
A
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
anode
5
cathode
4
collector
2
base
3
emitter
Simplified outline
5
1
Symbol
3
4
2
2
1
3
4
5
sym024
3. Ordering information
Table 3.
Ordering information
Type number
PMEM1505PG
Package
Name
Description
Version
-
plastic surface mounted package; 5 leads
SOT353
4. Marking
Table 4.
Marking
Type number
Marking code[1]
PMEM1505PG
L6*
[1]
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP transistor
VCBO
collector-base voltage
open emitter
-
−15
V
VCEO
collector-emitter voltage
open base
-
−15
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
-
−6
V
continuous
[1]
-
−0.5
A
continuous
[2]
-
−0.6
A
continuous;
Ts ≤ 55 °C
[3]
-
−1
A
ICM
peak collector current
-
−1
A
IBM
peak base current
-
−100
mA
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
2 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
Min
Max
Unit
Tamb ≤ 25 °C
[1]
total power dissipation
-
200
mW
Tamb ≤ 25 °C
[2]
-
250
mW
Ts ≤ 55 °C
[3]
-
800
mW
-
150
°C
-
20
V
junction temperature
Tj
Schottky barrier rectifier
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward
current
t = 8.3 ms
square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.5
A
-
5
A
[1]
-
200
mW
Tamb ≤ 25 °C
[2]
-
250
mW
Ts ≤ 55 °C
[3]
-
800
mW
[2]
-
125
°C
junction temperature
Tj
Combined device
Ptot
total power dissipation
Tstg
storage temperature
Tamb
operating ambient
temperature
Tamb ≤ 25 °C
[2]
[2]
-
300
mW
−65
+150
°C
−65
+150
°C
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[2]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both
collector and cathode.
[3]
Solder point of collector or cathode tab.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics[1]
Parameter
Conditions
Typ
Unit
Single device
Rth(j-s)
Rth(j-a)
from junction to solder point
from junction to ambient
in free air
[2]
120
K/W
in free air
[3]
395
K/W
[4]
495
K/W
[5]
410
K/W
Combined device
Rth(j-a)
from junction to ambient
[1]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Solder point of collector or cathode tab.
[3]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both
collector and cathode.
[4]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[5]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
PMEM1505PG_2
Product data sheet
in free air
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
3 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PNP transistor
collector-base cut-off
current
VCB = −15 V; IE = 0 A
-
-
−100
nA
VCB = −15 V; IE = 0 A;
Tj = 150 °C
-
-
−50
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −2 V; IC = −10 mA
200
-
-
VCE = −2 V; IC = −100 mA
150
-
-
90
-
-
ICBO
VCE = −2 V; IC = −500 mA
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA
[1]
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
-
-
−25
mV
-
-
−150
mV
-
-
−250
mV
-
300
< 500
mΩ
RCEsat
equivalent
on-resistance
IC = −500 mA; IB = −50 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
[1]
-
-
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −100 mA
[1]
-
-
−0.9
V
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
[1]
100
280
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A;
f = 1 MHz
-
4.4
10
pF
Schottky barrier rectifier
continuous forward
voltage
VF
reverse current
IR
diode capacitance
Cd
[1]
see Figure 1
IF = 10 mA
[1]
-
240
270
mV
IF = 100 mA
[1]
-
300
350
mV
IF = 500 mA
[1]
-
400
460
mV
IF = 1000 mA
[1]
-
480
550
mV
VR = 5 V
[1]
-
5
10
µA
VR = 8 V
[1]
-
7
20
µA
VR = 15 V
[1]
-
10
50
µA
-
19
25
pF
see Figure 2
VR = 5 V; f = 1 MHz; see
Figure 3
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
4 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
001aaa479
103
001aaa480
105
IR
(µA)
IF
(mA)
104
(1)
(2)
(1)
(3)
102
103
(2)
102
10
(3)
10
1
1
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
VF (V)
Schottky barrier rectifier
Schottky barrier rectifier
(1) Tamb = 125 °C
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
Fig 1.
25
VR (V)
Forward current as a function of forward
voltage; typical values
001aaa481
80
Cd
(pF)
Fig 2.
Reverse current as a function of reverse
voltage; typical values
001aaa486
600
hFE
(1)
60
400
40
(2)
200
20
(3)
0
−10−1
0
0
5
10
15
20
−1
−10
VR (V)
−102
−103
IC (mA)
Schottky barrier rectifier; f = 1 MHz; Tamb = 25 °C
PNP transistor; VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
DC current gain as a function of collector
current; typical values
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
5 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
001aaa487
−1.1
001aaa488
−103
VBE
(V)
VCEsat
(mV)
−0.9
(1)
−102
(2)
−0.7
−0.5
(1)
(2)
(3)
(3)
−10
−0.3
−0.1
−10−1
−1
−10
−102
−1
−10−1
−103
−1
−10
IC (mA)
−103
IC (mA)
PNP transistor; VCE = −2 V
PNP transistor; IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = −55 °C
Fig 5.
−102
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa489
103
RCEsat
(Ω)
102
10
1
(1)
(2)
(3)
10−1
−10−1
−1
−10
−102
−103
IC (mA)
PNP transistor; VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
Equivalent on-resistance as a function of collector current; typical values
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
6 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
8. Application information
VCC
VIN
VOUT
IN
CONTROLLER
mgu867
mgu866
Fig 8.
DC-to-DC converter
Fig 9.
Inductive load driver (relays, motors and
buzzers) with free-wheeling diode
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
7 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
9. Package outline
Plastic surface-mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.3
0.2
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
REFERENCES
IEC
JEDEC
JEITA
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
Fig 10. Package outline
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
8 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEM1505PG_2
20090831
Product data
-
PMEM1505PG_1
Modifications:
PMEM1505PG_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
Table 2 “Discrete pinning”: amended
Figure 10 “Package outline”: updated
20040526
Product data
PMEM1505PG_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
9 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMEM1505PG_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
10 of 11
PMEM1505PG
NXP Semiconductors
PNP transistor/Schottky rectifier module
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 31 August 2009
Document identifier: PMEM1505PG_2