PHILIPS PHP2N40E

Philips Semiconductors
Objective specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PINNING - TO220AB
PIN
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
PIN CONFIGURATION
DESCRIPTION
1
gate
2
drain
3
source
tab
PHP2N40E
MAX.
UNIT
400
2.5
50
3.5
V
A
W
Ω
SYMBOL
d
tab
g
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
RGS = 20 kΩ
IDM
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
IDR
IDRM
Ptot
Tstg
Tj
MIN.
MAX.
UNIT
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
-
400
400
30
2.5
1.6
10
V
V
V
A
A
A
Tmb = 25 ˚C
-
2.5
A
Tmb = 25 ˚C
-
10
A
Tmb = 25 ˚C
-55
-
50
150
150
W
˚C
˚C
MIN.
MAX.
UNIT
-
120
20
3.6
mJ
mJ
mJ
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
WDSR1
CONDITIONS
Drain-source non-repetitive ID = 2.5 A ; VDD ≤ 50 V ; VGS = 10 V ;
unclamped inductive turn-off RGS = 50 Ω
energy
Tj = 25˚C prior to surge
Tj = 100˚C prior to surge
Drain-source repetitive
ID = 2.5 A ; VDD ≤ 50 V ;
unclamped inductive turn-off VGS = 10 V ; RGS= 50 Ω ; Tj ≤ 150 ˚C
energy
1. Pulse width and frequency limited by Tj(max)
October 1996
1
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP2N40E
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
2.5
K/W
-
60
-
K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source leakage current
VGS = 0 V; ID = 0.25 mA
400
-
-
V
VDS = VGS; ID = 0.25 mA
VDS = 400 V; VGS = 0 V; Tj = 25 ˚C
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1.25 A
2.0
-
3.0
10
0.1
10
3.1
4.0
100
1.0
100
3.5
V
µA
mA
nA
Ω
-
1.4
2.0
V
MIN.
TYP.
MAX.
UNIT
VGS(TO)
IDSS
IGSS
RDS(ON)
VSD
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
IF = 2.5 A ;VGS = 0 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
gfs
Forward transconductance
VDS = 15 V; ID = 1.25 A
0.5
0.9
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
225
30
6.0
315
42
12
pF
pF
pF
Qg(tot)
Qgs
Qgd
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
VGS = 10 V; ID = 2.5 A; VDS = 320 V
-
12
2
6
-
nC
nC
nC
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 2.2 A;
VGS = 10 V; RGS = 50 Ω;
RGEN = 50 Ω
-
10
30
30
20
15
45
40
30
ns
ns
ns
ns
trr
Source-drain diode reverse
recovery time
Source-drain diode reverse
recovery charge
IF = 2.5 A; -dIF/dt = 100 A/µs;
-
350
-
ns
VGS = 0 V; VR = 100 V
-
2.5
-
µC
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
Qrr
October 1996
CONDITIONS
2
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP2N40E
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
October 1996
3
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP2N40E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1996
4
Rev 1.000