PHILIPS BUK545-60H

Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in
a plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
PINNING - SOT186
PIN
BUK545-60H
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
PIN CONFIGURATION
MAX.
UNIT
60
21
30
150
38
V
A
W
˚C
mΩ
SYMBOL
DESCRIPTION
d
case
1
gate
2
drain
3
source
g
case isolated
s
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source
voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
ID
ID
IDM
Ptot
Tstg
Tj
MIN.
MAX.
UNIT
RGS = 20 kΩ
tp ≤ 50 µs
-
60
60
15
20
V
V
V
V
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
- 55
-
21
13.5
82
30
150
150
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
4.17
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
With heatsink compound
Rth j-a
August 1994
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
MIN.
TYP.
MAX.
UNIT
VGS = 0 V; ID = 0.25 mA
60
-
-
V
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj =125 ˚C
VGS = ±15 V; VDS = 0 V
VGS = 5 V;
ID = 20 A
1.0
-
1.5
1
0.1
10
25
2.0
10
1.0
100
38
V
µA
mA
nA
mΩ
MIN.
TYP.
MAX.
UNIT
11
20
-
S
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 20 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1200
470
180
1750
600
275
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Ω;
Rgen = 50 Ω
-
25
120
160
110
40
150
220
145
ns
ns
ns
ns
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
1500
V
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
-
-
12
-
pF
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
21
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 21 A ; VGS = 0 V
-
0.9
84
2.0
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 21 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
60
0.25
-
ns
µC
August 1994
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 41 A ; VDD ≤ 25 V ; Ths = 25 ˚C
VGS = 5 V ; RGS = 50 Ω
Normalised Power Derating
PD%
120
1000
with heatsink compound
110
100
90
MIN.
TYP.
MAX.
UNIT
-
-
90
mJ
BUK545-60H
ID / A
ID
S/
100
)=
80
70
tp =
VD
10 us
ON
S(
RD
60
100 us
100 us
1 ms
10
50
10
ms
1 ms
100 ms
10 ms
100 ms
DC
40
30
1
20
10
0
0
20
40
60
80
Ths / C
100
120
0.1
0.1
140
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ths)
120
10
with heatsink compound
110
10
VDS / V
100
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
ID%
1
Zth / (K/W)
BUKx45-lv
D=
100
90
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
80
70
60
50
40
30
PD
tp
D=
20
10
0
0
20
40
60
80
Ths / C
100
120
0.001
1E-07
140
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 5 V
August 1994
T
1E-05
1E-03
t/s
tp
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
ID / A
100
BUK5Y5-60H
10
15
40
gfs / S
BUK5Y5-60H
6
5
80
30
4.5
60
4
40
20
3.5
10
3
20
Tj / C =
-40
25
150
VGS / V = 2.5
0
0
2
4
6
8
0
10
0
20
40
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
0.2
RDS(ON) / Ohm
2.5
3
80
100
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 10 V
a
BUK5Y5-60H
3.5
60
ID / A
Normalised RDS(ON) = f(Tj)
4
1.5
4.5
0.15
VGS / V = 5
1.0
0.1
10
0.5
0.05
6
15
0
0
20
40
60
80
0
100
-60 -40 -20
0
20
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
100
ID / A
40 60
Tj / C
80
100 120 140
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5 V
VGS(TO) / V
BUK5Y5-60H
max.
2
80
typ.
60
min.
1
40
20
Tj / C =
-40
25
150
0
0
1
2
3
4
VGS / V
5
6
7
0
8
-60
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
August 1994
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
1E-01
BUK545-60H
SUB-THRESHOLD CONDUCTION
ID / A
IS / A
100
1E-02
-40
25
150
80
2%
1E-03
98 %
typ
60
1E-04
40
1E-05
20
1E-06
0
0.4
0.8
1.2
VGS / V
1.6
2
0
2.4
0
0.5
1
1.5
VSDS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
10000
BUKXY5-60H
Tj / C =
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
BUK5Y5-60H
C / pF
120
110
Ciss
Coss
Crss
WDSS%
100
90
80
70
60
1000
50
40
30
20
10
0
100
0.1
1
10
20
100
40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
15
60
80
100
Ths / C
120
140
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 41 A
BUK5Y5-60H
VGS / V
VDD
+
L
VDD / V = 12
10
VDS
48
-
VGS
-ID/100
T.U.T.
0
5
RGS
0
0
10
20
30
40
50
60
70
R 01
shunt
80
QG / nC
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
August 1994
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
2
3
0.9
0.7
M
0.55 max
2.54
1.3
5.08
top view
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1994
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK545-60H
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1994
7
Rev 1.000
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