Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOT428 PIN BYQ30ED series QUICK REFERENCE DATA SYMBOL PARAMETER BYQ30EDRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode VRRM VF IO(AV) trr IRRM PIN CONFIGURATION DESCRIPTION 1 no connection 2 cathode 3 anode MAX. MAX. MAX. UNIT 100 100 150 150 200 200 V 0.95 16 0.95 16 0.95 16 V A 25 0.2 25 0.2 25 0.2 ns A SYMBOL tab k 1 a 2 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj CONDITIONS MIN. - square wave δ = 0.5; Tmb ≤ 104 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature MAX. -100 100 100 100 -150 150 150 150 UNIT -200 200 200 200 V V V - 16 A - 23 16 A A - 100 110 A A - 50 0.2 A2s A - 0.2 A -40 - 150 150 ˚C ˚C 1 Neglecting switching and reverse current losses. October 1997 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30ED series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes conducting minimum footprint, FR4 board Rth j-a MIN. TYP. MAX. UNIT - 50 3.0 2.5 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.83 1.0 0.98 0.3 2 0.95 1.15 1.25 0.6 30 V V mA µA MIN. TYP. MAX. UNIT STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) IF = 8 A; Tj = 150˚C IF = 16 A; Tj = 150˚C IF = 16 A; VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 4 11 nC IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs - 20 25 ns - 1.0 2 A - 1 - V trr Irrm Vfr October 1997 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYQ30ED series 12 F dt I R rr 120 1.9 8 2.8 132 4 4 138 2 144 100% 10% s 126 2.2 6 0 rrm Fig.1. Definition of trr, Qs and Irrm I 114 a = 1.57 time Q Tmb(max) / C Vo = 0.75 V Rs 0.025 Ohms 10 t I Forward dissipation, PF (W) BYQ30 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 150 8 Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns F 1000 IF=10A 100 time IF=1A VF 10 V fr VF 1 1 10 dIF/dt (A/us) time Fig.2. Definition of Vfr 12 10 Fig.5. Maximum trr at Tj = 25 ˚C. Forward dissipation, PF (W) BYQ30 Tmb(max) / C Vo = 0.75 V Rs = 0.025 Ohms D = 1.0 126 0.2 0.1 6 tp D= 2 0 2 4 6 8 Average forward current, IF(AV) (A) tp T t T 0 IF=1A 10 138 10 144 150 12 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. October 1997 IF=10A 100 132 I 4 trr / ns 1000 114 120 0.5 8 100 1 10 dIF/dt (A/us) 100 Fig.6. Maximum trr at Tj = 100 ˚C. 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged 10 BYQ30ED series Irrm / A 100 Qs / nC IF=10A 5A 2A 1A IF=10A 1 IF=1A 10 0.1 1.0 0.01 10 -dIF/dt (A/us) 1 100 1.0 Fig.7. Maximum Irrm at Tj = 25 ˚C. 10 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF=10A 1 1 IF=1A 0.1 0.1 PD tp t 0.01 10 -dIF/dt (A/us) 1 0.01 10 us 100 Fig.8. Maximum Irrm at Tj = 100 ˚C. 20 Forward current, IF (A) 1 ms 0.1 s pulse width, tp (s) 10 s Fig.11. Transient thermal impedance; Zth j-mb = f(tp). BYQ30 Tj = 25 C Tj = 150 C 15 10 typ max 5 0 0 0.5 1 1.5 Forward voltage, VF (V) 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1997 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30ED series MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.12. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.13. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". October 1997 5 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30ED series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Rev 1.000