Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72E series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOT93 PIN SYMBOL Anode 1 (a) 2 Cathode (k) 3 Anode 2 (a) tab Cathode (k) BYV72ERepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode VRRM VF IO(AV) trr IRRM PIN CONFIGURATION DESCRIPTION 1 PARAMETER MAX. MAX. MAX. UNIT 100 100 150 150 200 200 V 0.90 30 0.90 30 0.90 30 V A 28 0.2 28 0.2 28 0.2 ns A SYMBOL tab a1 a2 k 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 IO(AV) Output current (both diodes conducting)2 IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS MIN. - square wave δ = 0.5; Tmb ≤ 104 ˚C sinusoidal; a = 1.57; Tmb ≤ 107 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature MAX. -100 100 100 100 -150 150 150 150 UNIT -200 200 200 200 V V V - 30 A - 27 A - 43 30 A A - 150 160 A A - 112 0.2 A2s A - 0.2 A -40 - 150 150 ˚C ˚C 1 Tmb ≤ 144˚C for thermal stability. 2 Neglecting switching and reverse current losses. For output currents in excess of 20 A, connection should be made to the exposed metal mounting base. November 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72E series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes conducting in free air Rth j-a MIN. TYP. MAX. UNIT - 45 2.4 1.4 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.83 0.95 1.00 0.5 10 0.90 1.05 1.20 1 100 V V V mA µA MIN. TYP. MAX. UNIT STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs Reverse recovery charge (per diode) Reverse recovery time (per diode) Reverse recovery time (per diode) Forward recovery voltage (per diode) IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 20 28 ns - 13 22 ns IF = 1 A; dIF/dt = 10 A/µs - 1 - V trr1 trr2 Vfr November 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYV72E series 0.5A F dt IF t 0A rr time Q I 10% s I rec = 0.25A IR 100% trr2 I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 F 25 PF / W Tmb(max) / C 90 BYV72 Vo = 0.7050 V Rs = 0.0130 Ohms D = 1.0 102 20 0.5 15 114 0.2 time 0.1 V 126 10 F tp I V V tp D= T 138 5 fr t T F 0 0 5 10 15 IF(AV) / A time Fig.2. Definition of Vfr 150 25 20 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. R 20 PF / W Tmb(max) / C BYV72 102 a = 1.57 15 1.9 2.8 Voltage Pulse Source 4 10 Current shunt 126 5 138 to ’scope 0 Fig.3. Circuit schematic for trr2 November 1994 114 2.2 D.U.T. 0 5 IF(AV) / A 10 150 15 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72E series trr / ns 100 Qs / nC 1000 IF=20A 10A 5A 2A 1A IF=20A 100 10 IF=1A 10 1 1 10 dIF/dt (A/us) 1.0 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C; per diode 10 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Irrm / A Zth (K/W) 10 IF=20A 1 1 IF=1A 0.1 0.1 P D tp t 0.01 10 -dIF/dt (A/us) 1 0.01 10 us 100 0.1 10 s tp / s Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode 50 1 ms Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). IF / A Tj = 150 C 40 Tj = 25 C 30 20 typ 10 max 0 0 0.5 VF / V 1.0 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj November 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72E series MECHANICAL DATA Dimensions in mm 15.2 max 14 Net Mass: 5 g 4.6 max 13.6 4.25 4.15 2 max 2 4.4 21 max 12.7 max 2.2 max 0.5 min dimensions within this zone are uncontrolled 1 2 5.5 13.6 min 3 1.15 0.95 0.5 M 0.4 1.6 11 Fig.12. SOT93; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72E series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1994 6 Rev 1.100