PHILIPS BZV37

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D169
BZV37
Bidirectional voltage regulator
diode
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Product specification
Bidirectional voltage regulator diode
BZV37
FEATURES
DESCRIPTION
• Low total power dissipation:
max. 400 mW
Low-power voltage regulator diode in an hermetically sealed leaded glass
SOD68 (DO-34) package.
• Working voltage: nom. 6.5 V
• Non-repetitive peak reverse power
dissipation: max. 40 W
handbook, halfpage
• Bidirectional.
MAM247
The diode is type branded.
APPLICATIONS
• Voltage stabilizer and transient
protection element.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
IZ
continuous working current
IZSM
non-repetitive peak reverse current
MIN.
MAX.
UNIT
−
50
t = 30 s; t1 = 8 µs; t2 = 20 µs;
Tj = 25 °C prior to surge; see Fig.3
−
7
A
t = 30 s; t1 = 10 µs; t2 = 1000 µs;
Tj = 25 °C prior to surge; see Fig.3
−
2
A
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
400
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs square wave; Tj = 25 °C
prior to surge; see Fig.2
−
40
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
mW
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VZ
working voltage
V(CL)R
clamping voltage
CONDITIONS
IZtest = 5 mA
MIN.
NOM.
6.2
6.5
MAX.
6.8
UNIT
V
IZSM = 7 A; t1 = 8 µs; t2 = 20 µs
−
−
25
V
IZSM = 2 A; t1 = 10 µs;
t2 = 1000 µs
−
−
15
V
IZtest = 5 mA
−
−
20
Ω
rdiff
differential resistance
SZ
temperature coefficient
IZtest = 5 mA
−
−
Cd
diode capacitance
VR = 0 V
−
−
150
pF
IR
reverse current
VR = 4 V
−
−
10
µA
1996 Apr 26
0.1
%/K
VR = 4 V; Tj = 150 °C
−
−
30
µA
VR = 2 V
−
−
3
µA
2
Philips Semiconductors
Product specification
Bidirectional voltage regulator diode
BZV37
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 8 mm
300
K/W
Rth j-a
thermal resistance from junction to ambient
lead length max.; note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG801
103
handbook, halfpage
handbook,I halfpage
ZSM
PZSM
(W)
(%)
100
90
102
50
(1)
10
(2)
10
t
t1
1
10−1
1
duration (ms)
t2
10
MLC733
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.2
1996 Apr 26
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.3
3
Current pulse according to IEC 60-2,
Section 6.
Philips Semiconductors
Product specification
Bidirectional voltage regulator diode
BZV37
PACKAGE OUTLINE
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA478
Dimensions in mm.
Fig.4 SOD68 (DO-34).
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 26
4