DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD127 BZA800AL series Quadruple ESD transient voltage suppressor Product data sheet 2002 Jan 11 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series FEATURES PINNING • ESD rating >8 kV contact discharge, according to IEC1000-4-2 PIN • SOT353 (SC-88A) surface mount package • Common anode configuration. APPLICATIONS DESCRIPTION 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 • Computers and peripherals • Audio and video equipment • Communication systems. DESCRIPTION handbook, halfpage5 4 1 Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression. 3 2 4 5 MARKING 1 2 3 MGT580 TYPE NUMBER MARKING CODE BZA856AL M1 BZA862AL M2 BZA868AL M3 Fig.1 Simplified outline (SOT353) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Tamb = 25 °C − note 1 mA IF continuous forward current Tamb = 25 °C − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4 A Ptot total power dissipation Tamb = 25 °C; note 2; see Fig.5 − 300 mW PZSM non repetitive peak reverse power dissipation: square pulse; tp = 1 ms; see Fig.3 BZA856AL − 16 W BZA862AL − 15 W BZA868AL − 14 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Notes 1. DC working current limited by Ptot(max). 2. Device mounted on standard printed-circuit board. 2002 Jan 11 2 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient all diodes loaded 410 K/W Rth j-s thermal resistance from junction to solder point; note 1 one diode loaded 200 K/W all diodes loaded 185 K/W MAX. UNIT Note 1. Solder point of common anode (pin 2). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER − 1.3 V BZA856AL VR = 3 V − − 1 000 nA BZA862AL VR = 4 V − − 500 nA BZA868AL VR = 4.3 V − − 100 nA working voltage IZ = 1 mA BZA856AL 5.32 5.6 5.88 V BZA862AL 5.89 6.2 6.51 V BZA868AL 6.46 6.8 7.14 V BZA856AL − − 400 Ω BZA862AL − − 300 Ω BZA868AL − − 200 Ω BZA856AL − 0.3 − mV/K BZA862AL − 1.6 − mV/K BZA868AL − 2.2 − mV/K BZA856AL − − 125 pF BZA862AL − − 105 pF − − 90 pF BZA856AL − − 2.2 A BZA862AL − − 2.1 A BZA868AL − − 2 A IR reverse current SZ Cd differential resistance temperature coefficient diode capacitance IZ = 1 mA IZ = 1 mA f = 1 MHz; VR = 0 BZA868AL IZSM 2002 Jan 11 TYP. − forward voltage rdif MIN. IF = 200 mA VF VZ CONDITIONS non-repetitive peak reverse current tp = 1 ms; Tamb = 25 °C 3 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series MLD790 10 MLD791 102 handbook, halfpage handbook, halfpage PZSM IZSM (A) (W) BZA856AL BZA856AL BZA862AL 1 10 BZA862AL BZA868AL BZA868AL 10−1 10−2 10−1 1 tp (ms) 1 10−2 10 10−1 1 tp (ms) 10 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.3 Fig.2 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). Maximum non-repetitive peak reverse current as a function of pulse time. MLD792 120 MLD793 400 handbook, halfpage handbook, halfpage Ptot (mW) Cd (pF) 300 80 200 BZA856AL BZA862AL 40 BZA868AL 100 0 0 0 2 4 6 VR (V) 8 0 50 100 Tamb (°C) Tj = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 Jan 11 Fig.5 Power derating curve. 4 150 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor handbook, full pagewidth ESD TESTER RZ 450 Ω BZA800AL series RG 223/U 50 Ω coax CZ 10× ATTENUATOR DIGITIZING OSCILLOSCOPE 50 Ω note 1 1/4 BZA800AL IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements vertical scale = 100 V/div horizontal scale = 50 ns/div BZA868AL vertical scale = 5 V/div horizontal scale = 50 ns/div BZA862AL BZA856AL GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 100 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2002 Jan 11 5 MLD794 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT353 (SC88A) package makes it possible to protect four separate lines using only one package. A simplified example is shown in Fig 7. handbook, full pagewidth keyboard, terminal, printer, etc. A B C D I/O FUNCTIONAL DECODER BZA800AL GND MLD795 Fig.7 Computer interface protection. Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800AL is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors 2. Keep parallel signal paths to a minimum 3. Avoid running protection conductors in parallel with unprotected conductors 4. Minimize all printed-circuit board loop areas including power and ground loops 5. Minimize the length of the transient return path to ground 6. Avoid using shared transient return paths to a common ground point. 2002 Jan 11 6 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2002 Jan 11 REFERENCES IEC JEDEC EIAJ SC-88A 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800AL series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Jan 11 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2002 Jan 11 Document order number: 9397 750 09173