PHILIPS BAS216

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D154
BAS216
High-speed switching diode
Product data sheet
Supersedes data of 1999 Apr 22
2002 May 28
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
FEATURES
DESCRIPTION
• Small ceramic SMD package
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
cathode mark
handbook, 4 columns
• Repetitive peak forward current:
max. 500 mA.
a
k
k
a
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
bottom view
side view
top view
MAM139
Marking code: A6.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
250
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
400
mW
note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; see Fig.2; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2002 May 28
2
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 1 mA
−
715
mV
IF = 10 mA
−
855
mV
IF = 50 mA
−
1
V
IF = 150 mA
−
1.25
V
VR = 25 V
−
30
nA
VR = 75 V
−
1
µA
VR = 25 V; Tj = 150 °C
−
30
µA
see Fig.5
VR = 75 V; Tj = 150 °C
−
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2002 May 28
3
VALUE
UNIT
200
K/W
315
K/W
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
GRAPHICAL DATA
MSA570
MBG382
300
500
handbook, halfpage
IF
(mA)
P tot
(mW)
(1)
(2)
(3)
200
250
100
0
0
0
100
Tamb ( o C)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible total power
dissipation as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2002 May 28
4
104
NXP Semiconductors
Product data sheet
High-speed switching diode
MSA563
10 5
MBH285
0.6
handbook, halfpage
Cd
(pF)
IR
(nA)
10
BAS216
V R = 75 V
4
0.5
75 V
10 3
0.4
25 V
10 2
0.2
0
10
0
100
T j ( o C)
0
200
4
Dotted line: maximum values.
Solid lines: typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2002 May 28
5
8
12 V (V) 16
R
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2002 May 28
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
D
SOD110
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
1
2
0
0.5
1 mm
UNIT
A
max.
D
E
y
mm
1.6
2.10
1.90
1.40
1.10
0.1
scale
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-14
SOD110
2002 May 28
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
High-speed switching diode
BAS216
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 May 28
8
NXP Semiconductors
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Printed in The Netherlands
613514/05/pp9
Date of release: 2002 May 28
Document order number: 9397 750 09729