PHILIPS SSTUB32864

SSTUB32864
1.8 V configurable registered buffer for DDR2-800 RDIMM
applications
Rev. 02 — 26 March 2007
Product data sheet
1. General description
The SSTUB32864 is a 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer designed
for 1.7 V to 2.0 V VDD operation.
All clock and data inputs are compatible with the JEDEC standard for SSTL_18. The
control inputs are LVCMOS. All outputs are 1.8 V CMOS drivers that have been optimized
to drive the DDR2 DIMM load.
The SSTUB32864 operates from a differential clock (CK and CK). Data are registered at
the crossing of CK going HIGH, and CK going LOW.
The C0 input controls the pinout configuration of the 1 : 2 pinout from A configuration
(when LOW) to B configuration (when HIGH). The C1 input controls the pinout
configuration from 25-bit 1 : 1 (when LOW) to 14-bit 1 : 2 (when HIGH).
The device supports low-power standby operation. When the reset input (RESET) is LOW,
the differential input receivers are disabled, and un-driven (floating) data, clock and
reference voltage (VREF) inputs are allowed. In addition, when RESET is LOW all
registers are reset, and all outputs are forced LOW. The LVCMOS RESET and Cn inputs
must always be held at a valid logic HIGH or LOW level.
To ensure defined outputs from the register before a stable clock has been supplied,
RESET must be held in the LOW state during power-up.
In the DDR2 RDIMM application, RESET is specified to be completely asynchronous with
respect to CK and CK. Therefore, no timing relationship can be guaranteed between the
two. When entering reset, the register will be cleared and the data outputs will be driven
LOW quickly, relative to the time to disable the differential input receivers. However, when
coming out of reset, the register will become active quickly, relative to the time to enable
the differential input receivers. As long as the data inputs are LOW, and the clock is stable
during the time from the LOW-to-HIGH transition of RESET until the input receivers are
fully enabled, the design of the SSTUB32864 must ensure that the outputs will remain
LOW, thus ensuring no glitches on the output.
The device monitors both DCS and CSR inputs and will gate the Qn outputs from
changing states when both DCS and CSR inputs are HIGH. If either DCS or CSR input is
LOW, the Qn outputs will function normally. The RESET input has priority over the DCS
and CSR control and will force the outputs LOW. If the DCS-control functionality is not
desired, then the CSR input can be hardwired to ground, in which case the set-up time
requirement for DCS would be the same as for the other Dn data inputs.
The SSTUB32864 is available in a 96-ball, low profile fine-pitch ball grid array (LFBGA96)
package.
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
2. Features
n
n
n
n
n
n
n
n
n
n
n
n
Configurable register supporting DDR2 Registered DIMM applications
Configurable to 25-bit 1 : 1 mode or 14-bit 1 : 2 mode
Controlled output impedance drivers enable optimal signal integrity and speed
Meets SSTUB32864 JEDEC specification speed performance
Supports up to 450 MHz clock frequency of operation
Optimized pinout for high-density DDR2 module design
Chip-selects minimize power consumption by gating data outputs from changing state
Supports SSTL_18 data inputs
Differential clock (CK and CK) inputs
Supports LVCMOS switching levels on the control and RESET inputs
Single 1.8 V supply operation (1.7 V to 2.0 V)
Available in 96-ball, 13.5 mm × 5.5 mm, 0.8 mm ball pitch LFBGA package
3. Applications
n 400 MT/s to 800 MT/s DDR2 registered DIMMs without parity
4. Ordering information
Table 1.
Ordering information
Tamb = 0 °C to +70 °C.
Type number
Solder process
Package
Name
SSTUB32864EC/G Pb-free (SnAgCu
LFBGA96
solder ball compound)
Description
Version
plastic low profile fine-pitch ball grid array package;
96 balls; body 13.5 × 5.5 × 1.05 mm
SOT536-1
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
2 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
5. Functional diagram
RESET
CK
CK
SSTUB32864
VREF
DCKE
DODT
DCS
1D
C1
QCKEA
R
QCKEB(1)
1D
C1
R
QODTA
1D
C1
R
QCSA
1D
C1
R
Q1A
QODTB(1)
QCSB(1)
CSR
D1
0
1
Q1B(1)
002aac012
to other channels
(1) Disabled in 1 : 1 configuration.
Fig 1. Functional diagram of SSTUB32864; 1 : 2 mode (positive logic)
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
3 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
6. Pinning information
6.1 Pinning
ball A1 SSTUB32864EC/G
index area
1 2 3 4 5 6
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
002aac013
Transparent top view
Fig 2. Pin configuration for LFBGA96
1
2
3
4
5
6
A
DCKE
n.c.
VREF
VDD
QCKE
DNU
B
D2
D15
GND
GND
Q2
Q15
C
D3
D16
VDD
VDD
Q3
Q16
D
DODT
n.c.
GND
GND
QODT
DNU
E
D5
D17
VDD
VDD
Q5
Q17
F
D6
D18
GND
GND
Q6
Q18
G
n.c.
RESET
VDD
VDD
C1
C0
H
CK
DCS
GND
GND
QCS
DNU
J
CK
CSR
VDD
VDD
ZOH
ZOL
K
D8
D19
GND
GND
Q8
Q19
L
D9
D20
VDD
VDD
Q9
Q20
M
D10
D21
GND
GND
Q10
Q21
N
D11
D22
VDD
VDD
Q11
Q22
P
D12
D23
GND
GND
Q12
Q23
R
D13
D24
VDD
VDD
Q13
Q24
T
D14
D25
VREF
VDD
Q14
Q25
002aaa955
Fig 3. Ball mapping; 1 : 1 register (C0 = 0, C1 = 0); top view
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
4 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
1
2
3
4
5
6
A
DCKE
n.c.
VREF
VDD
QCKEA
QCKEB
B
D2
DNU
GND
GND
Q2A
Q2B
C
D3
DNU
VDD
VDD
Q3A
Q3B
D
DODT
n.c.
GND
GND
QODTA
QODTB
E
D5
DNU
VDD
VDD
Q5A
Q5B
F
D6
DNU
GND
GND
Q6A
Q6B
G
n.c.
RESET
VDD
VDD
C1
C0
H
CK
DCS
GND
GND
QCSA
QCSB
J
CK
CSR
VDD
VDD
ZOH
ZOL
K
D8
DNU
GND
GND
Q8A
Q8B
L
D9
DNU
VDD
VDD
Q9A
Q9B
M
D10
DNU
GND
GND
Q10A
Q10B
N
D11
DNU
VDD
VDD
Q11A
Q11B
P
D12
DNU
GND
GND
Q12A
Q12B
R
D13
DNU
VDD
VDD
Q13A
Q13B
T
D14
DNU
VREF
VDD
Q14A
Q14B
002aaa956
Fig 4. Ball mapping; 1 : 2 register A (C0 = 0, C1 = 1); top view
1
2
3
4
5
6
A
D1
n.c.
VREF
VDD
Q1A
Q1B
B
D2
DNU
GND
GND
Q2A
Q2B
C
D3
DNU
VDD
VDD
Q3A
Q3B
D
D4
n.c.
GND
GND
Q4A
Q4B
E
D5
DNU
VDD
VDD
Q5A
Q5B
F
D6
DNU
GND
GND
Q6A
Q6B
G
n.c.
RESET
VDD
VDD
C1
C0
H
CK
DCS
GND
GND
QCSA
QCSB
J
CK
CSR
VDD
VDD
ZOH
ZOL
K
D8
DNU
GND
GND
Q8A
Q8B
L
D9
DNU
VDD
VDD
Q9A
Q9B
M
D10
DNU
GND
GND
Q10A
Q10B
N
DODT
DNU
VDD
VDD
QODTA
QODTB
P
D12
DNU
GND
GND
Q12A
Q12B
R
D13
DNU
VDD
VDD
Q13A
Q13B
T
DCKE
DNU
VREF
VDD
QCKEA
QCKEB
002aaa957
Fig 5. Ball mapping; 1 : 2 register B (C0 = 1, C1 = 1); top view
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
5 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
6.2 Pin description
Table 2.
Pin description
Symbol
Pin
Type
Description
GND
B3, B4, D3, D4, F3, F4, ground input
H3, H4, K3, K4, M3,
M4, P3, P4
VDD
A4, C3, C4, E3, E4,
G3, G4, J3, J4, L3, L4,
N3, N4, R3, R4, T4
1.8 V nominal
VREF
A3, T3
0.9 V nominal
input reference voltage
ZOH
J5
input
reserved for future use
ZOL
J6
input
reserved for future use
CK
H1
differential input positive master clock input
CK
J1
differential input negative master clock input
C0, C1
G6, G5
LVCMOS inputs configuration control inputs
RESET
G2
LVCMOS input
Asynchronous reset input (active LOW). Resets registers and
disables VREF data and clock differential-input receivers.
CSR, DCS
J2, H2
SSTL_18 input
Chip select inputs (active LOW). Disables data outputs
switching when both inputs are HIGH.[2]
D1 to D25
[1]
SSTL_18 input
Data inputs. Clocked in on the crossing of the rising edge of
CK and the falling edge of CK.
DODT
[1]
SSTL_18 input
The outputs of this register will not be suspended by DCS and
CSR control.
DCKE
[1]
SSTL_18 input
The outputs of this register will not be suspended by DCS and
CSR control.
Q1 to Q25,
Q1A to Q14A,
Q1B to Q14B
[1]
1.8 V CMOS
outputs that are suspended by DCS and CSR control[3]
QCS, QCSA,
QCSB
[1]
1.8 V CMOS
data outputs that will not be suspended by DCS and CSR
control
QODT, QODTA,
QODTB
[1]
1.8 V CMOS
data outputs that will not be suspended by DCS and CSR
control
QCKE, QCKEA,
QCKEB
[1]
1.8 V CMOS
data outputs that will not be suspended by DCS and CSR
control
n.c.
A2, D2, G1
-
Not connected. Ball present but no internal connection to the
die.
DNU
[1]
-
Do-not-use. Ball internally connected to the die which should
be left open-circuit.
ground
power supply voltage
[1]
Depends on configuration. See Figure 3, Figure 4, and Figure 5 for ball number.
[2]
Configurations:
Data inputs = D2, D3, D5, D6, D8 to D25 when C0 = 0 and C1 = 0.
Data inputs = D2, D3, D5, D6, D8 to D14 when C0 = 0 and C1 = 1.
Data inputs = D1 to D6, D8 to D10, D12, D13 when C0 = 1 and C1 = 1.
[3]
Configurations:
Data outputs = Q2, Q3, Q5, Q6, Q8 to Q25 when C0 = 0 and C1 = 0.
Data outputs = Q2, Q3, Q5, Q6, Q8 to Q14 when C0 = 0 and C1 = 1.
Data outputs = Q1 to Q6, Q8 to Q10, Q12, Q13 when C0 = 1 and C1 = 1.
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
6 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
7. Functional description
7.1 Function table
Table 3.
Function table (each flip-flop)
L = LOW voltage level; H = HIGH voltage level; X = don’t care; ↑ = LOW-to-HIGH transition;
↓ = HIGH-to-LOW transition
Outputs[1]
Inputs
RESET
DCS
CSR
CK
CK
H
L
L
↑
↓
L
L
L
L
H
L
L
↑
↓
H
H
L
H
H
L
L
L or H
L or H
X
Q0
Q0
Q0
H
L
H
↑
↓
L
L
L
L
[1]
Qn
QCS
QODT,
QCKE
H
L
H
↑
↓
H
H
L
H
H
L
H
L or H
L or H
X
Q0
Q0
Q0
H
H
L
↑
↓
L
L
H
L
H
H
L
↑
↓
H
H
H
H
H
H
L
L or H
L or H
X
Q0
Q0
Q0
H
H
H
↑
↓
L
Q0
H
L
H
H
H
↑
↓
H
Q0
H
H
H
H
H
L or H
L or H
X
Q0
Q0
Q0
L
X or
floating
X or
floating
X or
floating
X or
floating
X or
floating
L
L
L
Q0 is the previous state of the associated output.
SSTUB32864_2
Product data sheet
Dn,
DODT,
DCKE
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
7 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
8. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDD
Conditions
Min
Max
Unit
supply voltage
−0.5
+2.5
V
+2.5[2]
V
VI
input voltage
receiver
−0.5[1]
VO
output voltage
driver
−0.5[1]
VDD + 0.5[2]
V
IIK
input clamping current
VI < 0 V or VI > VDD
-
±50
mA
IOK
output clamping current
VO < 0 V or VO > VDD
-
±50
mA
IO
output current
continuous;
0 V < VO < VDD
-
±50
mA
ICCC
continuous current through each
VDD or GND pin
-
±100
mA
Tstg
storage temperature
−65
+150
°C
[1]
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
This value is limited to 2.5 V maximum.
9. Recommended operating conditions
Table 5.
Operating conditions
Symbol
Parameter
VDD
supply voltage
Vref
VT
Min
Typ
Max
Unit
1.7
-
2.0
V
reference voltage
0.49 × VDD
0.50 × VDD
0.51 × VDD
V
termination voltage
Vref − 0.040
Vref
Vref + 0.040
V
VI
input voltage
0
-
VDD
V
VIH(AC)
AC HIGH-level input voltage data inputs (Dn), CSR
Vref + 0.250
-
-
V
VIL(AC)
AC LOW-level input voltage
-
-
Vref − 0.250
V
VIH(DC)
DC HIGH-level input voltage data inputs (Dn), CSR
Vref + 0.125
-
-
V
VIL(DC)
DC LOW-level input voltage
HIGH-level input voltage
VIH
Conditions
data inputs (Dn), CSR
-
-
Vref − 0.125
V
RESET, Cn
[1]
0.65 × VDD
-
VDD
V
RESET, Cn
[1]
data inputs (Dn), CSR
VIL
LOW-level input voltage
-
-
0.35 × VDD
V
VICR
common mode input voltage CK, CK
range
[2]
0.675
-
1.125
V
VID
differential input voltage
[2]
600
-
-
mV
CK, CK
IOH
HIGH-level output current
-
-
−8
mA
IOL
LOW-level output current
-
-
8
mA
Tamb
ambient temperature
0
-
+70
°C
operating in free air
[1]
The RESET and Cn inputs of the device must be held at valid logic levels (not floating) to ensure proper device operation.
[2]
The differential inputs must not be floating, unless RESET is LOW.
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
8 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
10. Characteristics
Table 6.
Characteristics
Recommended operating conditions; Tamb = 0 °C to +70 °C; all voltages are referenced to GND (ground = 0 V);
unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VOH
VOL
HIGH-level output voltage
IOH = −6 mA; VDD = 1.7 V
1.2
-
-
V
LOW-level output voltage
IOL = 6 mA; VDD = 1.7 V
-
-
0.5
V
II
input current
all inputs; VI = VDD or GND;
VDD = 2.0 V
−5
-
+5
µA
IDD
supply current
static Standby mode;
RESET = GND; IO = 0 mA;
VDD = 2.0 V
-
-
2
mA
static Operating mode;
RESET = VDD; IO = 0 mA;
VDD = 2.0 V; VI = VIH(AC) or VIL(AC)
-
-
40
mA
clock only; RESET = VDD;
VI = VIH(AC) or VIL(AC); CK and CK
switching at 50 % duty cycle.
IO = 0 mA; VDD = 2.0 V
-
16
-
µA
per each data input, 1 : 1 mode;
RESET = VDD;
VI = VIH(AC) or VIL(AC); CK and CK
switching at 50 % duty cycle.
One data input switching at half
clock frequency, 50 % duty cycle.
IO = 0 mA; VDD = 2.0 V
-
11
-
µA
per each data input, 1 : 2 mode;
RESET = VDD;
VI = VIH(AC) or VIL(AC); CK and CK
switching at 50 % duty cycle.
One data input switching at half
clock frequency, 50 % duty cycle.
IO = 0 mA; VDD = 2.0 V
-
19
-
µA
data inputs, CSR;
VI = Vref ± 250 mV; VDD = 1.8 V
2.5
-
3.5
pF
CK and CK; VICR = 0.9 V;
VID = 600 mV; VDD = 1.8 V
2
-
3
pF
RESET; VI = VDD or GND;
VDD = 1.8 V
2
-
4
pF
IDDD
Ci
dynamic operating current
per MHz
input capacitance
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
9 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
Table 7.
Timing requirements
Recommended operating conditions; Tamb = 0 °C to +70 °C; VDD = 1.8 V ± 0.1 V; unless otherwise specified.
See Figure 6 through Figure 11.
Symbol
Parameter
fclock
clock frequency
tW
pulse width
Conditions
Typ
Max
Unit
-
-
450
MHz
1
-
-
ns
differential inputs active time
[1][2]
-
-
10
ns
tINACT
differential inputs inactive time
[1][3]
tsu
set-up time
tACT
CK, CK HIGH or LOW
Min
hold time
th
-
-
15
ns
DCS before CK ↑, CK ↓,
CSR HIGH
0.6
-
-
ns
DCS before CK ↑, CK ↓,
CSR LOW
0.5
-
-
ns
CSR, ODT, CKE, and data
before CK ↑, CK ↓
0.5
-
-
ns
DCS, CSR, ODT, CKE,
and data after CK ↑, CK ↓
0.4
-
-
ns
[1]
This parameter is not necessarily production tested.
[2]
Data inputs must be active below a minimum time of tACT(max) after RESET is taken HIGH.
[3]
Data and clock inputs must be held at valid levels (not floating) a minimum time of tINACT(max) after RESET is taken LOW.
Table 8.
Switching characteristics
Recommended operating conditions; Tamb = 0 °C to +70 °C; VDD = 1.8 V ± 0.1 V;
Class I, Vref = VT = VDD × 0.5 and CL = 10 pF; unless otherwise specified. See Figure 6 through Figure 11.
Symbol
Parameter
fmax
maximum input clock frequency
Conditions
tPDM
peak propagation delay
CK and CK to output
[1]
tPDMSS
simultaneous switching
peak propagation delay
CK and CK to output
[1][2]
tPHL
HIGH-to-LOW propagation delay
RESET to output
[1]
Includes 350 ps of test-load transmission line delay.
[2]
This parameter is not necessarily production tested.
Min
Typ
Max
Unit
450
-
-
MHz
1.1
-
1.5
ns
-
-
1.6
ns
-
-
3
ns
Min
Typ
Max
Unit
Table 9.
Output edge rates
Recommended operating conditions; VDD = 1.8 V ± 0.1 V; unless otherwise specified.
Symbol
Parameter
Conditions
dV/dt_r
rising edge slew rate
1
-
4
V/ns
dV/dt_f
falling edge slew rate
1
-
4
V/ns
dV/dt_∆
absolute difference between dV/dt_r
and dV/dt_f
-
-
1
V/ns
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
10 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
11. Test information
11.1 Test circuit
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz; Z0 = 50 Ω; input slew rate = 1 V/ns ± 20 %, unless otherwise specified.
The outputs are measured one at a time with one transition per measurement.
VDD
DUT
CK
CK
CK inputs
RL = 1000 Ω
delay = 350 ps
Zo = 50 Ω
50 Ω
OUT
CL = 30 pF(1)
RL = 1000 Ω
test point
RL = 100 Ω
test point
002aaa371
(1) CL includes probe and jig capacitance.
Fig 6. Load circuit
LVCMOS
VDD
0.5VDD
0.5VDD
RESET
0V
tINACT
IDD(1)
tACT
90 %
10 %
002aaa372
(1) IDD tested with clock and data inputs held at VDD or GND, and IO = 0 mA.
Fig 7. Voltage and current waveforms; inputs active and inactive times
tW
VIH
input
VICR
VICR
VID
VIL
002aaa373
VID = 600 mV.
VIH = Vref + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = Vref − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 8. Voltage waveforms; pulse duration
SSTUB32864_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 March 2007
11 of 19
SSTUB32864
NXP Semiconductors
1.8 V configurable registered buffer for DDR2-800 RDIMM applications
CK
VICR
VID
CK
tsu
th
VIH
input
Vref
Vref
VIL
002aaa374
VID = 600 mV.
Vref = 0.5VDD.
VIH = Vref + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = Vref − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 9. Voltage waveforms; set-up and hold times
CK
VICR
VICR
tPLH
tPHL
Vi(p-p)
CK
VOH
VT
output
VOL
002aaa375
tPLH and tPHL are the same as tPD.
Fig 10. Voltage waveforms; propagation delay times (clock to output)
LVCMOS
VIH
RESET
0.5VDD
VIL
tPHL
VOH
output
VT
VOL
002aaa376
tPLH and tPHL are the same as tPD.
VIH = Vref + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = Vref − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 11. Voltage waveforms; propagation delay times (reset to output)
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11.2 Output slew rate measurement
VDD = 1.8 V ± 0.1 V.
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz; Z0 = 50 Ω; input slew rate = 1 V / ns ± 20 %, unless otherwise specified.
VDD
DUT
RL = 50 Ω
OUT
test point
CL = 10
pF(1)
002aaa377
(1) CL includes probe and jig capacitance.
Fig 12. Load circuit, HIGH-to-LOW slew measurement
output
VOH
80 %
dv_f
20 %
dt_f
002aaa378
VOL
Fig 13. Voltage waveforms, HIGH-to-LOW slew rate measurement
DUT
OUT
test point
CL = 10 pF(1)
RL = 50 Ω
002aaa379
(1) CL includes probe and jig capacitance.
Fig 14. Load circuit, LOW-to-HIGH slew measurement
dt_r
VOH
80 %
dv_r
20 %
output
002aaa380
VOL
Fig 15. Voltage waveforms, LOW-to-HIGH slew rate measurement
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Product data sheet
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Rev. 02 — 26 March 2007
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1.8 V configurable registered buffer for DDR2-800 RDIMM applications
12. Package outline
LFBGA96: plastic low profile fine-pitch ball grid array package; 96 balls; body 13.5 x 5.5 x 1.05 mm SOT536-1
A
B
D
ball A1
index area
A
A2
E
A1
detail X
e1
C
1/2 e
∅v M C A B
e
T
R
P
N
M
L
K
J
H
G
F
E
D
C
B
A
ball A1
index area
y1 C
y
∅w M C
b
e
e2
1/2 e
1 2 3 4 5 6
X
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
b
D
E
e
e1
e2
v
w
y
y1
mm
1.5
0.41
0.31
1.2
0.9
0.51
0.41
5.6
5.4
13.6
13.4
0.8
4
12
0.15
0.1
0.1
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
00-03-04
03-02-05
SOT536-1
Fig 16. Package outline SOT536-1 (LFBGA96)
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Product data sheet
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Rev. 02 — 26 March 2007
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1.8 V configurable registered buffer for DDR2-800 RDIMM applications
13. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus PbSn soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
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13.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 17) than a PbSn process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Table 10.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
≥ 350
< 2.5
235
220
≥ 2.5
220
220
Table 11.
Lead-free process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (°C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 17.
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maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 17. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
14. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
DDR
Double Data Rate
DIMM
Dual In-line Memory Module
LVCMOS
Low Voltage Complementary Metal Oxide Semiconductor
PRR
Pulse Repetition Rate
RDIMM
Registered Dual In-line Memory Module
SSTL
Stub Series Terminated Logic
15. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SSTUB32864_2
20070326
Product data sheet
-
SSTUB32864_1
Modifications:
SSTUB32864_1
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 6 “Characteristics”, symbol IDD (max.) changed from “100 µA” to “2 mA”.
20060421
Product data sheet
SSTUB32864_2
Product data sheet
-
-
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16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
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18. Contents
1
2
3
4
5
6
6.1
6.2
7
7.1
8
9
10
11
11.1
11.2
12
13
13.1
13.2
13.3
13.4
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6
Functional description . . . . . . . . . . . . . . . . . . . 7
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Recommended operating conditions. . . . . . . . 8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Output slew rate measurement. . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Introduction to soldering . . . . . . . . . . . . . . . . . 15
Wave and reflow soldering . . . . . . . . . . . . . . . 15
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 15
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 March 2007
Document identifier: SSTUB32864_2