DISCRETE SEMICONDUCTORS DATA SHEET PDZ-B series Voltage regulator diodes Product data sheet Supersedes data of 2002 Feb 18 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series FEATURES PINNING • Total power dissipation: max. 400 mW ;; PIN • Small plastic package suitable for surface mounted design 1 2 • Wide variety of voltage ranges: nominal 2.4 to 36 V (E24 range) • Tolerance approximately ±2%. handbook, halfpage • General voltage regulation. cathode anode 1 APPLICATIONS DESCRIPTION 2 Top view MAM387 The marking bar indicates the cathode. DESCRIPTION Fig.1 Low-power general purpose voltage regulator diodes in a small plastic SMD SOD323 (SC-76) package. Simplified outline (SOD323; SC-76) and symbol. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP ORDERING INFORMATION TYPE NUMBER PDZ2.4B to PDZ36B 2004 Mar 22 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 2 leads 2 VERSION SOD323 NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tamb = 25 °C prior to surge Ptot total power dissipation Tamb = 25 °C; note 1; see Fig.2 Tstg Tj UNIT 200 mA see Table 2 − 400 mW storage temperature −65 +150 °C junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-s) thermal resistance from junction to soldering point Rth(j-a) thermal resistance from junction to ambient note 1 Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. 2004 Mar 22 3 VALUE UNIT 130 K/W 340 K/W NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series CHARACTERISTICS Table 1 Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current PDZ2.4B PDZ2.7B PDZ3.0B PDZ3.3B PDZ3.6B PDZ3.9B PDZ4.3B PDZ4.7B PDZ5.1B PDZ5.6B PDZ6.2B PDZ6.8B PDZ7.5B PDZ8.2B PDZ9.1B PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B PDZ16B PDZ18B PDZ20B PDZ22B PDZ24B PDZ27B PDZ30B PDZ33B PDZ36B 2004 Mar 22 CONDITIONS 4 MAX. UNIT IF = 10 mA; see Fig.3 IF = 100 mA; see Fig.3 0.9 1.1 V V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1.5 V VR = 2.5 V VR = 3 V VR = 3.5 V VR = 4 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 9 V VR = 10 V VR = 11 V VR = 12 V VR = 13 V VR = 15 V VR = 17 V VR = 19 V VR = 21 V VR = 23 V VR = 25 V VR = 27 V 50 20 10 5 5 3 3 2 2 1 500 500 500 500 500 100 100 100 100 50 50 50 50 50 50 50 50 50 50 μA μA μA μA μA μA μA μA μA μA nA nA nA nA nA nA nA nA nA nA nA nA nA nA nA nA nA nA nA 5 TEMP. COEFF. SZ (mV/K) at IZ = 5 mA (see Figs 4 and 5) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. MAX. at IZ (mA) MAX. at IZ (mA) TYP. MAX. MAX. 2.43 2.69 2.85 3.32 3.60 3.89 4.17 4.55 4.96 5.48 6.06 6.65 7.28 8.02 8.85 9.77 10.78 11.74 12.91 14.34 15.85 17.56 19.52 21.54 23.72 26.19 29.19 32.15 35.07 2.63 2.91 3.07 3.53 3.85 4.16 4.48 4.75 5.20 5.73 6.33 6.93 7.60 8.36 9.23 10.21 11.22 12.24 13.49 14.98 16.51 18.35 20.39 22.47 24.78 27.53 30.69 33.79 36.87 1 000 1 000 1 000 1 000 500 500 600 600 250 100 80 60 60 60 60 60 60 80 80 80 80 80 100 100 120 150 200 250 300 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 100 100 95 95 90 90 90 90 60 50 50 40 10 10 10 10 10 10 10 15 20 20 20 25 30 40 40 40 60 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 0.3 1.9 2.7 3.4 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 23.4 26.6 29.7 33.0 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 108 105 103 99 97 93 88 84 80 73 66 60 59 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 5.5 5.5 5.5 5.5 3.5 3.5 3.5 3.5 3.0 3.0 2.5 2.0 1.5 1.5 1.5 1.3 1.3 1.0 1.0 0.9 0.8 Product data sheet MIN. PDZ-B series PDZ2.4B PDZ2.7B PDZ3.0B PDZ3.3B PDZ3.6B PDZ3.9B PDZ4.3B PDZ4.7B PDZ5.1B PDZ5.6B PDZ6.2B PDZ6.8B PDZ7.5B PDZ8.2B PDZ9.1B PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B PDZ16B PDZ18B PDZ20B PDZ22B PDZ24B PDZ27B PDZ30B PDZ33B PDZ36B DIFFERENTIAL RESISTANCE rdif (Ω) NXP Semiconductors TYPE NUMBER WORKING VOLTAGE VZ (V) at IZ = 5 mA Voltage regulator diodes 2004 Mar 22 Table 2 Per type Tj = 25 °C unless otherwise specified. NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series GRAPHICAL DATA MBK245 500 MBG781 300 handbook, halfpage handbook, halfpage Ptot (mW) IF (mA) 400 200 300 200 100 100 0 0.6 0 0 50 100 150 200 Tamb (°C) 0.8 1 VF (V) Tj = 25 °C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.2 Power derating curve. MGL273 MGL274 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4.3 11 10 −1 9.1 5 3.9 8.2 7.5 6.8 3.6 −2 6.2 5.6 5.1 0 3.3 4.7 3.0 2.4 2.7 −3 0 20 40 IZ (mA) −5 60 0 4 PDZ2.4B to PDZ4.3B. Tj = 25 °C to 150 °C. PDZ4.7B to PDZ12B. Tj = 25 °C to 150 °C. Fig.4 Fig.5 Temperature coefficient as a function of working current; typical values. 2004 Mar 22 6 8 12 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Mar 22 REFERENCES IEC JEDEC JEITA SC-76 7 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Mar 22 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615