DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV20; BAV21 General purpose diodes Product data sheet Supersedes data of 1996 Sep 17 1999 May 25 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BAV20 and BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max. 625 mA. handbook, halfpage k a MAM246 APPLICATIONS • General purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. 1999 May 25 The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. 2 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAV20 − 200 V BAV21 − 250 V BAV20 − 150 V BAV21 − 200 V − 250 mA − 625 mA t = 1 μs − 9 A t = 100 μs − 3 A t=1s − 1 A continuous peak reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 400 mW Tstg storage temperature Tamb = 25 °C; note 1 −65 +175 °C Tj junction temperature − 175 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1999 May 25 3 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V VR = VRmax − 100 nA VR = VRmax; Tj = 150 °C − 100 μA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1999 May 25 4 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 GRAPHICAL DATA MBG449 300 MBG459 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) (3) 200 100 0 0 0 Tamb (oC) 100 0 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (μs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 25 5 104 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 MGD009 103 handbook, halfpage MGD005 1.6 handbook, halfpage IR (μA) Cd (pF) 102 1.4 10 1.2 1 1.0 10−1 10−2 0 100 Tj (oC) 0.8 200 0 10 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MGL588 300 handbook, halfpage VR (V) (1) 200 (2) 100 0 0 100 Tamb (oC) 200 (1) BAV21. (2) BAV20. Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1999 May 25 6 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 handbook, full pagewidth tr tp t D.U.T. R = 50 Ω S V = VR IF x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1999 May 25 t rr 7 output signal NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 1999 May 25 8 EUROPEAN PROJECTION ISSUE DATE 97-06-09 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 25 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/03/pp10 Date of release: 1999 May 25 Document order number: 9397 750 05895