APT20M36BLL
APT20M36SLL
200V 65A 0.036Ω
POWER MOS 7
R
MOSFET
BLL
D3PAK
TO-247
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
SLL
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M36BLL_SLL
UNIT
Drain-Source Voltage
200
Volts
ID
Continuous Drain Current @ TC = 25°C
65
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
329
Watts
Linear Derating Factor
2.63
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
260
-55 to 150
°C
300
Amps
65
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 32.5A)
TYP
MAX
Volts
0.036
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7007 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M36BLL_SLL
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 100V
ID = 65A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
490
VDD = 133V, VGS = 15V
300
ID = 65A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
30
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
70
60
24
26
9
37
16
ID = 65A @ 25°C
Fall Time
MAX
3080
990
VGS = 10V
Turn-off Delay Time
tf
TYP
VDD = 100V
Rise Time
td(off)
MIN
µJ
600
VDD = 133V VGS = 15V
315
ID = 65A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
65
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -65A, dl S/dt = 100A/µs)
280
ns
Q rr
Reverse Recovery Charge (IS = -65A, dl S/dt = 100A/µs)
3.5
µC
dv/
Peak Diode Recovery
dt
260
(Body Diode)
1.3
(VGS = 0V, IS = -65A)
dv/
6
dt
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
0.38
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.62mH, RG = 25Ω, Peak IL = 65A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.30
0.7
0.25
0.5
0.20
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7007 Rev C
7-2004
0.40
0.35
0.3
0.1
0.05
0
SINGLE PULSE
0.05
10-5
t1
t2
0.10
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
APT20M36BLL_SLL
RC MODEL
Junction
temp. (°C)
0.0329
Power
(watts)
0.158
0.00334F
0.00802F
0.189
0.165F
ID, DRAIN CURRENT (AMPERES)
200
Case temperature. (°C)
100
80
60
40
TJ = +25°C
20
TJ = +125°C
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
7.5V
7V
40
6.5V
6V
1.4
V
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
NORMALIZED TO
= 10V @ I = 32.5A
GS
D
1.3
1.2
VGS=10V
1.1
1.0
0.9
0.8
VGS=20V
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
= 32.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
7-2004
D
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7007 Rev C
ID, DRAIN CURRENT (AMPERES)
8V
80
1.15
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
9V
120
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
10V
160
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
VGS=15V
100µS
10
1mS
5
C, CAPACITANCE (pF)
50
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
Ciss
5
10
50 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 65A
14
VDS=40V
12
VDS=100V
10
VDS=160V
8
6
4
2
0
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
45
40
1,000
Coss
500
100
Crss
50
10
1
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
5,000
100
1
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
0
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
R
G
td(off)
100
35
= 133V
= 5Ω
T = 125°C
J
L = 100µH
30
V
DD
R
G
25
80
= 133V
= 5Ω
T = 125°C
J
L = 100µH
20
td(on)
15
tr and tf (ns)
td(on) and td(off) (ns)
APT20M36BLL_SLL
10,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
260
tf
60
tr
40
10
20
5
0
30
40
0
30
50
60
70
80
90
100
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
60
70
80
90
100
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
DD
R
= 5Ω
T = 125°C
J
E ON includes
diode reverse recovery.
600
Eon
400
Eoff
200
0
30
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
7-2004
050-7007 Rev C
G
= 133V
L = 100µH
800
50
1000
V
1000
40
800
Eon
600
Eoff
400
V
DD
I
D
= 133V
= 65A
T = 125°C
200
J
L = 100µH
EON includes
diode reverse recovery.
40
50
60
70
80
90
100
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M36BLL_SLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(on)
td(off)
TJ125°C
90%
tr
tf
Drain Voltage
Drain Current
90%
5%
10%
0
5%
10%
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7007 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
7-2004
3.50 (.138)
3.81 (.150)