APT8014JLL_A.PDF

APT8014JLL
800V 42A 0.140Ω
POWER MOS 7
R
S
S
MOSFET
27
2
T-
D
G
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SO
"UL Recognized"
ISOTOP ®
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
VDSS
ID
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8014JLL
UNIT
800
Volts
42
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
PD
TJ,TSTG
168
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
42
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 21A)
TYP
MAX
Volts
0.140
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
12-2003
Characteristic / Test Conditions
050-7105 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8014JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1402
Reverse Transfer Capacitance
f = 1 MHz
248
VGS = 10V
285
VDD = 400V
30
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 52A @ 25°C
tf
19
VDD = 400V
ID = 52A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
15
INDUCTIVE SWITCHING @ 25°C
6
1091
VDD = 533V, VGS = 15V
ID = 52A, RG = 3Ω
1135
INDUCTIVE SWITCHING @ 125°C
6
ns
69
RG = 0.6Ω
Fall Time
nC
20
VGS = 15V
Turn-off Delay Time
pF
170
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
7238
VGS = 0V
3
MAX
µJ
1662
VDD = 533V, VGS = 15V
ID = 52A, RG = 3Ω
1383
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
42
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID52A, dl S /dt = 100A/µs)
930
ns
Q
Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100A/µs)
29
µC
rr
dv/
dt
Peak Diode Recovery
dv/
168
(Body Diode)
1.3
(VGS = 0V, IS = -ID52A)
dt
5
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.63mH, RG = 25Ω, Peak IL = 42A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID42A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.15
0.7
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7105 Rev A
12-2003
0.25
0.20
0.10
0.3
0
t1
t2
Duty Factor D = t1/t2
0.05
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT8014JLL
RC MODEL
Junction
temp. ( ”C)
0.0492
Power
(Watts)
0.142
0.0273F
0.469F
0.0189
44.2F
ID, DRAIN CURRENT (AMPERES)
140
Case temperature
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
TJ = -55°C
60
TJ = +25°C
40
20
TJ = +125°C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
80
6V
60
5.5V
40
5V
20
1.40
NORMALIZED TO
= 10V @ 26A
V
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.00
0.95
0.90
= 26A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2003
D
1.05
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
1.10
050-7105 Rev A
ID, DRAIN CURRENT (AMPERES)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6.5V
100
1.15
45
0.0
-50
8V
7V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
140
0
VGS =15 & 10V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
120
APT8014JLL
20,000
168
OPERATION HERE
LIMITED BY RDS (ON)
10,000
50
100µS
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
Crss
100
16
= 52A
12
VDS= 160V
VDS= 400V
VDS= 640V
8
4
0
0
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1,000
10mS
1
I
Ciss
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
160
V
td(off)
140
= 533V
DD
R
G
120
= 3Ω
T = 125°C
J
L = 100µH
100
V
100
DD
R
G
= 3Ω
T = 125°C
J
80
tf
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
120
L = 100µH
60
80
60
40
40
tr
20
20
td(on)
0
10
0
10
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
050-7105 Rev A
SWITCHING ENERGY (µJ)
12-2003
2500
30
12000
= 533V
DD
I
D
10000
T = 125°C
J
E ON includes
diode reverse recovery.
1500
Eon
1000
Eoff
500
0
10
20
V
= 3Ω
L = 100µH
2000
40
50
60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
SWITCHING ENERGY (µJ)
3000
20
30
= 533V
= 52A
Eoff
T = 125°C
J
L = 100µH
EON includes
8000
diode reverse recovery.
6000
4000
Eon
2000
0
20
30
40
50
60
70
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014JLL
10 %
90%
Gate Voltage
TJ = 125 C
T = 125 C
J
td(off)
td(on)
Drain Voltage
90%
90%
tr
5%
t
f
5%
10%
10 %
Drain Current
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Drain
Gate
12-2003
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7105 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
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