APT8014JLL 800V 42A 0.140Ω POWER MOS 7 R S S MOSFET 27 2 T- D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® D • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8014JLL UNIT 800 Volts 42 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 595 Watts Linear Derating Factor 4.76 W/°C PD TJ,TSTG 168 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 42 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 21A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 12-2003 Characteristic / Test Conditions 050-7105 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT8014JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1402 Reverse Transfer Capacitance f = 1 MHz 248 VGS = 10V 285 VDD = 400V 30 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 52A @ 25°C tf 19 VDD = 400V ID = 52A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 15 INDUCTIVE SWITCHING @ 25°C 6 1091 VDD = 533V, VGS = 15V ID = 52A, RG = 3Ω 1135 INDUCTIVE SWITCHING @ 125°C 6 ns 69 RG = 0.6Ω Fall Time nC 20 VGS = 15V Turn-off Delay Time pF 170 RESISTIVE SWITCHING Rise Time td(off) UNIT 7238 VGS = 0V 3 MAX µJ 1662 VDD = 533V, VGS = 15V ID = 52A, RG = 3Ω 1383 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 42 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID52A, dl S /dt = 100A/µs) 930 ns Q Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100A/µs) 29 µC rr dv/ dt Peak Diode Recovery dv/ 168 (Body Diode) 1.3 (VGS = 0V, IS = -ID52A) dt 5 Amps Volts 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.21 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 3.63mH, RG = 25Ω, Peak IL = 42A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID42A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.15 0.7 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7105 Rev A 12-2003 0.25 0.20 0.10 0.3 0 t1 t2 Duty Factor D = t1/t2 0.05 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-4 °C/W 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT8014JLL RC MODEL Junction temp. ( ”C) 0.0492 Power (Watts) 0.142 0.0273F 0.469F 0.0189 44.2F ID, DRAIN CURRENT (AMPERES) 140 Case temperature VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 80 TJ = -55°C 60 TJ = +25°C 40 20 TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 80 6V 60 5.5V 40 5V 20 1.40 NORMALIZED TO = 10V @ 26A V GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 1.00 0.95 0.90 = 26A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 D 1.05 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V 1.10 050-7105 Rev A ID, DRAIN CURRENT (AMPERES) 40 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 6.5V 100 1.15 45 0.0 -50 8V 7V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 140 0 VGS =15 & 10V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 120 APT8014JLL 20,000 168 OPERATION HERE LIMITED BY RDS (ON) 10,000 50 100µS 10 1mS 5 TC =+25°C TJ =+150°C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 Crss 100 16 = 52A 12 VDS= 160V VDS= 400V VDS= 640V 8 4 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Coss 1,000 10mS 1 I Ciss 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 160 V td(off) 140 = 533V DD R G 120 = 3Ω T = 125°C J L = 100µH 100 V 100 DD R G = 3Ω T = 125°C J 80 tf = 533V tr and tf (ns) td(on) and td(off) (ns) 120 L = 100µH 60 80 60 40 40 tr 20 20 td(on) 0 10 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 050-7105 Rev A SWITCHING ENERGY (µJ) 12-2003 2500 30 12000 = 533V DD I D 10000 T = 125°C J E ON includes diode reverse recovery. 1500 Eon 1000 Eoff 500 0 10 20 V = 3Ω L = 100µH 2000 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT SWITCHING ENERGY (µJ) 3000 20 30 = 533V = 52A Eoff T = 125°C J L = 100µH EON includes 8000 diode reverse recovery. 6000 4000 Eon 2000 0 20 30 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8014JLL 10 % 90% Gate Voltage TJ = 125 C T = 125 C J td(off) td(on) Drain Voltage 90% 90% tr 5% t f 5% 10% 10 % Drain Current Switching Energy Switching Energy 0 Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. Drain Gate 12-2003 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7105 Rev A 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)