APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G ® • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S FREDFET D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M20JFLL UNIT Drain-Source Voltage 200 Volts ID Continuous Drain Current @ TC = 25°C 104 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 463 Watts Linear Derating Factor 3.70 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 416 -55 to 150 °C 300 Amps 100 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 52A) TYP MAX UNIT Volts 0.020 Ohms Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 4-2004 Characteristic / Test Conditions 050-7045 Rev D Symbol APT20M20JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time td(off) tf TYP ID = 104A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V Turn-off Delay Time ID = 104A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 465 VDD = 130V, VGS = 15V 455 ID = 104A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 2 RG = 0.6Ω Eon UNIT pF 95 110 43 47 13 40 26 VDD = 100V Rise Time MAX 6850 2180 VGS = 10V Qgs tr MIN µJ 920 VDD = 130V, VGS = 15V ID = 104A, RG = 5Ω 915 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions MIN TYP MAX 104 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 416 Diode Forward Voltage 2 (VGS = 0V, IS = -104A) 1.3 Volts 8 V/ns Peak Diode Recovery dv/ dt 5 t rr Reverse Recovery Time (IS = -104A, di/dt = 100A/µs) Tj = 25°C 220 Tj = 125°C 420 Q rr Reverse Recovery Charge (IS = -104A, di/dt = 100A/µs) Tj = 25°C 1.07 Tj = 125°C 2.9 IRRM Peak Recovery Current (IS = -104A, di/dt = 100A/µs) Tj = 25°C 12.1 Tj = 125°C 20.6 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 4-2004 050-7045 Rev D 0.9 t2 0.1 10-5 t1 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 0.46mH, RG = 25Ω, Peak IL = 104A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID104A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.30 0.25 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT20M20JFLL 250 0.0409 Power (Watts) 0.225 0.00361 0.0246F 0.406F 0.147.639F Case temperature ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) VGS =15 &10V 9V 200 7.5V 150 7V 100 6.5 6V 50 5.5V 0 200 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 160 140 120 100 TJ = +125°C 80 TJ = +25°C TJ = -55°C 60 40 20 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 100 90 80 70 60 50 40 30 20 10 0 25 I V D 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON)vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 = 52A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.20 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 D 1.30 1.15 110 NORMALIZED TO = 10V @ I = 52A GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 0 V 050-7045 Rev D ID, DRAIN CURRENT (AMPERES) 180 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 10,000 100 1mS 10mS 10 Crss I D = 75A VDS=40V 12 VDS=100V VDS=160V 8 4 0 0 20 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 90 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 80 V G J DD R G L = 100µH 50 = 130V tr and tf (ns) V = 5Ω T = 125°C J L = 100µH 40 = 130V = 5Ω T = 125°C 120 60 DD R 140 td(off) 70 td(on) and td(off) (ns) 100 10 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 30 td(on) 20 100 tf 80 tr 60 40 20 10 0 20 40 0 20 80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 60 80 100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 DD R G = 5Ω T = 125°C J 1000 L = 100µH E ON includes diode reverse recovery. 800 600 Eon 400 200 0 20 60 = 130V SWITCHING ENERGY (µJ) 1200 40 2500 V SWITCHING ENERGY (µJ) Coss 1,000 TC =+25°C TJ =+150°C SINGLE PULSE 1 4-2004 Ciss 100µS C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 050-7045 Rev D APT20M20JFLL 20,000 415 2000 Eoff 1500 Eon 1000 V I = 130V = 100A T = 125°C 500 J L = 100µH EON includes Eoff 40 DD D diode reverse recovery. 60 80 100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT20M20JFLL 90% 10% Gate Voltage Gate Voltage TJ125°C td(off) td(on) tf tr Drain Current 90% 5% 5% 10% TJ125°C Drain Voltage 90% 10% Drain Voltage 0 Drain Current Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT100S20B V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 4-2004 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7045 Rev D 7.8 (.307) 8.2 (.322)