APT20M34B_SLL_B.pdf

APT20M34BLL
APT20M34SLL
200V 74A 0.034Ω
POWER MOS 7
R
MOSFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M34BLL_SLL
UNIT
200
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
296
TL
EAS
74
-55 to 150
°C
300
Amps
74
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 37A)
TYP
MAX
Volts
0.034
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7008 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M34BLL_SLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1170
Reverse Transfer Capacitance
f = 1 MHz
60
VGS = 10V
60
VDD = 100V
23
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 74A @ 25°C
tr
td(off)
tf
27
VDD = 100V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
6
ns
25
ID = 74A @ 25°C
Turn-off Delay Time
nC
10
VGS = 15V
Rise Time
pF
26
RESISTIVE SWITCHING
Turn-on Delay Time
UNIT
3660
VGS = 0V
3
MAX
4
INDUCTIVE SWITCHING @ 25°C
505
VDD = 133V, VGS = 15V
ID = 74A, RG = 5Ω
395
INDUCTIVE SWITCHING @ 125°C
640
VDD = 133V VGS = 15V
µJ
425
ID = 74A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
TYP
74
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -74A, dl S/dt = 100A/µs)
160
Q
Reverse Recovery Charge (IS = -74A, dl S/dt = 100A/µs)
1.3
rr
dv/
dt
Peak Diode Recovery
dv/
296
(Body Diode)
(VGS = 0V, IS = -74A)
dt
MAX
1.3
5
UNIT
Amps
Volts
ns
µC
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
TYP
0.31
40
4 Starting Tj = +25°C, L = 0.470mH, RG = 25Ω, Peak IL = 74A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID74A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
0.15
0.3
0.10
t1
t2
Duty Factor D = t1/t2
0.05
0
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7008 Rev B
9-2004
0.35
0.30
0.1
0.05
10-5
°C/W
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT20M34BLL_SLL
RC MODEL
Junction
temp. (°C)
0.131
0.00789F
Power
(watts)
0.180
0.161F
ID, DRAIN CURRENT (AMPERES)
160
VGS=10 &15V
140
6.5V
120
6V
100
80
5.5V
60
5V
40
4.5V
20
4V
Case temperature. (°C)
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
60
TJ = +25°C
40
TJ = +125°C
TJ = -55°C
20
0
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
70
1.2
VGS=10V
1.1
1.0
0.9
0.8
VGS=20V
0
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
1.00
0.95
0.90
-50
= 37A
GS
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
9-2004
ID, DRAIN CURRENT (AMPERES)
GS
1.3
1.15
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 37A
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7008 Rev B
ID, DRAIN CURRENT (AMPERES)
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
297
10,000
Ciss
100µS
10
1
1mS
C, CAPACITANCE (pF)
100
16
= 74A
12
VDS=40V
VDS=100V
8
VDS=160V
4
0
0
Crss
10
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
Coss
1,000
10
20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT20M34BLL_SLL
20,000
50
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
td(off)
R
DD
R
G
= 5Ω
T = 125°C
J
L = 100µH
20
tf
60
tr
40
td(on)
20
30
0
10
70
90
110
130
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
50
70
90
110
130
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
DD
R
G
1000
J
Eon
E ON includes
diode reverse recovery.
600
400
Eoff
800
Eon
600
V
400
I
30
50
70
90
110
130
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
DD
D
= 133V
= 74A
T = 125°C
J
200
200
0
10
Eoff
= 5Ω
T = 125°C
L = 100µH
800
50
= 133V
SWITCHING ENERGY (µJ)
1000
30
1200
V
SWITCHING ENERGY (µJ)
J
80
= 133V
tr and tf (ns)
td(on) and td(off) (ns)
30
0
10
9-2004
T = 125°C
L = 100µH
V
10
050-7008 Rev B
G
100
40
= 133V
= 5Ω
L = 100µH
E ON includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M34BLL_SLL
90%
Gate Voltage
10%
Gate Voltage
T 125°C
J
td(on)
tf
Drain Current
tr
Drain Voltage
90%
90%
5%
TJ125°C
td(off)
10%
0
5%
10%
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60S20
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7008 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)
9-2004
3.50 (.138)
3.81 (.150)
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