ATMEL ATA6662-TAQY

Features
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Operating Range from 5V to 27V
Baud Rate up to 20 Kbaud
Improved Slew Rate Control According to LIN Specification 2.0, 2.1 and SAEJ2602-2
Fully Compatible with 3.3V and 5V Devices
Dominant Time-out Function at Transmit Data (TXD)
Normal and Sleep Mode
Wake-up Capability via LIN Bus (90 µs Dominant)
External Wake-up via WAKE Pin (35 µs Low Level)
Control of External Voltage Regulator via INH Pin
Very Low Standby Current During Sleep Mode (10 µA)
Wake-up Source Recognition
Bus Pin Short-circuit Protected versus GND and Battery
LIN Input Current < 2 µA if VBAT Is Disconnected
Overtemperature Protection
High EMC Level
Interference and Damage Protection According to ISO/CD 7637
Fulfills the OEM “Hardware Requirements for LIN in Automotive Applications Rev.1.0”
LIN Transceiver
ATA6662
ATA6662C
1. Description
The ATA6662 is a fully integrated LIN transceiver complying with the LIN specification
2.0, 2.1 and SAEJ2602-2. It interfaces the LIN protocol handler and the physical layer.
The device is designed to handle the low-speed data communication in vehicles, for
example, in convenience electronics. Improved slope control at the LIN bus ensures
secure data communication up to 20 Kbaud with an RC oscillator for protocol handling. Sleep Mode guarantees minimal current consumption. The ATA6662 has
advanced EMI and ESD performance.
Figure 1-1.
Block Diagram
7
VS
6
LIN
Receiver
RXD
+
1
Filter
Short-circuit and overtemperature protection
Wake-up bus timer
TXD
4
TXD
time-out
timer
Slew rate control
VS
VS
Control unit
WAKE
3
Wake-up
timer
5
Sleep mode
2
EN
GND
8
INH
4916O–AUTO–05/10
2. Pin Configuration
Figure 2-1.
Pinning SO8
RXD
EN
WAKE
TXD
Table 2-1.
2
1
2
3
4
8
7
6
5
INH
VS
LIN
GND
Pin Description
Pin
Symbol
Function
1
RXD
2
EN
Enables Normal Mode; when the input is open or low, the device is in Sleep Mode
3
WAKE
High voltage input for local wake-up request. If not needed, connect directly to VS
Receive data output (open drain)
4
TXD
Transmit data input; active low output (strong pull-down) after a local wake-up request
5
GND
Ground, heat sink
6
LIN
LIN bus line input/output
7
VS
Battery supply
8
INH
Battery-related inhibit output for controlling an external voltage regulator; active high after a wake-up
request
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ATA6662
3. Functional Description
3.1
Physical Layer Compatibility
Since the LIN physical layer is independent from higher LIN layers (e.g., the LIN protocol layer),
all nodes with a LIN physical layer according to revision 2.x can be mixed with LIN physical layer
nodes, which, according to older versions (i.e., LIN 1.0, LIN 1.1, LIN 1.2, LIN 1.3), are without
any restrictions.
3.2
Supply Pin (VS)
Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in
order to avoid false bus messages. After switching on VS, the IC switches to Fail-safe Mode and
INHIBIT is switched on. The supply current in Sleep Mode is typically 10 µA.
3.3
Ground Pin (GND)
The ATA6662 does not affect the LIN Bus in the case of a GND disconnection. It is able to handle a ground shift up to 11.5% of VS.
3.4
Bus Pin (LIN)
A low-side driver with internal current limitation and thermal shutdown and an internal pull-up
resistor are implemented as specified for LIN 2.x. The voltage range is from –27V to +40V. This
pin exhibits no reverse current from the LIN bus to VS, even in the case of a GND shift or VBatt
disconnection. The LIN receiver thresholds are compatible to the LIN protocol specification.The
fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope
controlled. The output has a self-adapting short circuit limitation; that is, during current limitation,
as the chip temperature increases, the current is reduced.
3.5
Input/Output Pin (TXD)
In Normal Mode the TXD pin is the microcontroller interface to control the state of the Lin output.
TXD must be at Low- level in order to have a low LIN Bus. If TXD is high, the LIN output
transistor is turned off and the Bus is in recessive state. The TXD pin is compatible to both a
3.3V or 5V supply. During fail-safe Mode, this pin is used as output and is signalling the wake-up
source (see Section 3.14 “Wake-up Source Recognition” on page 7). It is current limited to
< 8 mA.
3.6
TXD Dominant Time-out Function
The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from
being driven permanently in dominant state. If TXD is forced to low longer than tDOM > 6 ms, the
pin LIN will be switched off (Recessive Mode). To reset this mode, switch TXD to high (> 10 µs)
before switching LIN to dominant again.
3.7
Output Pin (RXD)
This pin reports to the microcontroller the state of the LIN bus. LIN high (recessive) is reported
by a high level at RXD, LIN low (dominant) is reported by a low voltage at RXD. The output is an
open drain, therefore, it is compatible to a 3.3V or 5V power supply. The AC characteristics are
defined with a pull-up resistor of 5 kΩ to 5V and a load capacitor of 20 pF. The output is shortprotected. In Unpowered Mode (VS = 0V), RXD is switched off. For ESD protection a Zener
diode is integrated, with VZ = 6.1V.
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3.8
Enable Input Pin (EN)
This pin controls the Operation Mode of the interface. If EN = 1, the interface is in Normal Mode,
with the transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge
on EN, while TXD is already set to high, the device is switched to Sleep Mode and no transmission is possible. In Sleep Mode, the LIN bus pin is connected to VS with a weak pull-up current
source. The device can transmit only after being woken up (see Section 3.9, “Inhibit Output Pin
(INH)” ).
During Sleep Mode the device is still supplied from the battery voltage. The supply current is
typically 10 µA. The pin EN provides a pull-down resistor in order to force the transceiver into
Sleep Mode in case the pin is disconnected.
3.9
Inhibit Output Pin (INH)
This pin is used to control an external switchable voltage regulator having a wake-up input. The
inhibit pin provides an internal switch towards pin VS. If the device is in Normal Mode, the inhibit
high-side switch is turned on and the external voltage regulator is activated. When the device is
in Sleep Mode, the inhibit switch is turned off and disables the voltage regulator.
A wake-up event on the LIN bus or at pin WAKE will switch the INH pin to the VS level. After a
system power-up (VS rises from zero), the pin INH switches automatically to the VS level.
3.10
Wake-up Input Pin (WAKE)
This pin is a high-voltage input used to wake the device up from Sleep Mode. It is usually
connected to an external switch in the application to generate a local wake-up. A pull-up current
source with typically –10 µA is implemented. The voltage threshold for a wake-up signal is 3V
below the VS voltage with an output current of typically –3 µA.
If you do not need a local wake-up in your application, connect pin WAKE directly to pin VS.
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3.11
Operation Modes
1. Normal Mode
This is the normal transmitting and Receiving Mode. All features are available.
2. Sleep Mode
In this mode the transmission path is disabled and the device is in low power mode.
Supply current from VBatt is typically 10 µA. A wake-up signal from the LIN bus or via pin
WAKE will be detected and will switch the device to Fail-safe Mode. If EN then switches
to high, Normal Mode is activated. Input debounce timers at pin WAKE (tWAKE), LIN
(tBUS) and EN (tsleep,tnom) prevent unwanted wake-up events due to automotive
transients or EMI. In Sleep Mode the INH pin is left floating. The internal termination
between pin LIN and pin VS is disabled. Only a weak pull-up current (typical 10 µA)
between pin LIN and pin VS is present. The Sleep Mode can be activated independently
from the actual level on pin LIN or WAKE.
3. Fail-safe Mode
At system power-up or after a wake-up event, the device automatically switches to Failsafe Mode. It switches the INH pin to a high state, to the VS level. LIN communication is
switched off. The microcontroller of the application will then confirm the Normal Mode
by setting the EN pin to high.
4. Unpowered Mode
If you connect battery voltage to the application circuit, the voltage at the VS pin
increases according to the block capacitor. After VS is higher than the VS undervoltage
threshold VSth, the IC mode changes from Unpowered Mode to Fail-safe Mode.
Figure 3-1.
Mode of Operation
a: VS > 5V
b: VS < 5V
c: Bus wake-up event
d: Wake-up from wake switch
Unpowered Mode
VBatt = 0V
b
a
Fail-safe Mode
INH: high (INH internal high-side switch ON)
Communication: OFF
b
b
c
EN = 1
d
Go to sleep command
EN = 0; after 1 → 0 while TXD = 1
Normal Mode
INH: high (INH HS switch ON)
Communication: ON
Table 3-1.
Local wake-up event
EN = 1
Sleep Mode
INH: high impedance (INH HS switch OFF)
Communication: OFF
Table of Modes
Mode of Operation
Transceiver
INH
RXD
LIN
Fail-safe
Off
On
High, except after
wake up
Recessive
Normal
On
On
LIN depending
TXD depending
Sleep
Off
Off
High ohmic
Recessive
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Wake-up events from Sleep Mode:
• LIN bus
• EN pin
• WAKE pin
• VS Undervoltage
Figure 3-1 on page 5, Figure 3-2 on page 6 and Figure 3-3 on page 7 show details of wake-up
operations.
3.12
Remote Wake-up via Dominant Bus State
A voltage less than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN
receiver and switches on the internal slave termination between the LIN pin and the VS pin.
A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain time
period (tBUS) and a rising edge at pin LIN results in a remote wake-up request. The device
switches to Fail-safe Mode. Pin INH is activated (switches to VS) and the internal termination
resistor is switched on. The remote wake-up request is indicated by a low level at pin RXD to
interrupt the microcontroller (see Figure 3-2 on page 6).
Figure 3-2.
LIN Wake-up Waveform Diagram
Bus wake-up filtering time
(tBUS)
LIN bus
High
INH
Low or floating
RXD
High or floating
Low
External
voltage
regulator
Off state
Regulator wake-up time delay
Normal
Mode
EN High
EN
Node in sleep state
Microcontroller start-up
delay time
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3.13
Local Wake-up via Pin WAKE
A falling edge at pin WAKE, followed by a low level maintained for a certain time period (tWAKE),
results in a local wake-up request. The wake-up time (tWAKE) ensures that no transient, according to ISO7637, creates a wake-up. The device switches to Fail-safe Mode. Pin INH is activated
(switches to VS) and the internal termination resistor is switched on. The local wake-up request
is indicated by a low level at pin RXD to interrupt the microcontroller and a strong pull-down at
pin TXD (see Figure on page 9). The voltage threshold for a wake-up signal is 3V below the VS
voltage with an output current of typical –3 µA. Even in the case of a continuous low at pin
WAKE it is possible to switch the IC into Sleep Mode via a low at pin EN. The IC will stay in
Sleep Mode for an unlimited time. To generate a new wake up at pin WAKE it needs first a high
signal > 6 µs before a negative edge starts the wake-up filtering time again.
Figure 3-3.
Wake-up from Wake-up Switch
State change
Wake pin
INH
Low or floating
RXD
High or floating
TXD
TXD weak pull-down resistor
High
Low
High
TXD strong pull-down
Weak
pull-down
Wake filtering time
tWAKE
Voltage
regulator
On state
Off state
Regulator wake-up time delay
EN
Node in
operation
EN High
Node in sleep state
Microcontroller start-up
delay time
3.14
Wake-up Source Recognition
The device can distinguish between a local wake-up request (pin WAKE) and a remote wake-up
request (LIN bus). The wake-up source can be read on pin TXD in Fail-safe Mode. If an external
pull-up resistor (typically 5 kΩ) has been added on pin TXD to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull-down at pin TXD) and a low
level indicates a local wake-up request (strong pull-down at pin TXD).
The wake-up request flag (signalled on pin RXD) as well as the wake-up source flag (signalled
on pin TXD) are reset immediately if the microcontroller sets pin EN to high (see Figure 3-2 on
page 6 and Figure 3-3 on page 7).
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3.15
Fail-safe Features
• The reverse current is < 2 µA at pin LIN during loss of VBAT; this is optimal behavior for bus
systems where some slave nodes are supplied from battery or ignition.
• Pin EN provides a pull-down resistor to force the transceiver into Sleep Mode if EN is
disconnected.
• Pin RXD is set floating if VBAT is disconnected.
• Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected.
• The LIN output driver has a current limitation, and if the junction temperature Tj exceeds the
thermal shut-down temperature Toff, the output driver switches off.
• The implemented hysteresis, Thys, enables the LIN output again after the temperature has
been decreased.
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4. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Max.
Unit
–0.3
+40
V
Wake DC and transient voltage (with 33-kΩ serial resistor)
- Transient voltage due to ISO7637 (coupling 1 nF)
–1
–150
+40
+100
V
V
Logic pins (RXD, TXD, EN)
–0.3
+5.5
V
LIN
- DC voltage
- Transient voltage due to ISO7637 (coupling 1 nF)
–27
–150
+40
+100
V
V
INH
- DC voltage
–0.3
VS + 0.3
V
VS
- Continuous supply voltage
Symbol
Min.
Typ.
ESD according to IBEE LIN EMC
Test specification 1.0 following IEC 61000-4-2
- Pin VS, LIN to GND
- Pin WAKE (33 kΩ serial resistor)
±6
±5
KV
KV
ESD HBM following STM5.1
with 1.5 kΩ/100 pF
- Pin VS, LIN, WAKE, INH to GND
±6
KV
±3
KV
CDM ESD STM 5.3.1
±750
V
Machine Model ESD
AEC-Q100-RevF(003)
±100
V
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
Junction temperature
Tj
–40
+150
°C
Storage temperature
Tstg
–55
+150
°C
Symbol
Min.
Max.
Unit
145
K/W
5. Thermal Characteristics
Parameters
Thermal resistance junction ambient
RthJA
Special heat sink at GND (pin 5) on PCB (fused lead
frame to pin 5)
RthJA
Typ.
80
K/W
Thermal shutdown
Toff
150
165
180
°C
Thermal shutdown hysteresis
Thys
5
10
20
°C
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6. Electrical Characteristics
5V < VS < 27V, Tj = –40°C to +150°C
No.
1
1.1
1.2
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5
13.5
27
V
A
VS Pin
DC voltage range nominal
Supply current in Sleep Mode
1.3
Supply current in Normal Mode
1.4
7
VS
Sleep Mode
VLIN > VS – 0.5V
VS < 14V
7
IVSsleep
10
20
µA
A
Bus recessive
VS < 14V
7
IVSrec
0.9
1.3
mA
A
Bus dominant
VS < 14V
Total bus load > 500Ω
7
IVSdom
1.2
2
mA
A
Bus recessive
VS < 14V
7
IVSfail
0.5
1.1
mA
A
1.5
Supply current in Fail-safe Mode
1.6
VS undervoltage threshold on
VSth
4
4.95
V
A
1.7
VS undervoltage threshold off
VSth
4.05
5
V
A
1.8
VS undervoltage threshold
hysteresis
7
VSth_hys
50
500
mV
A
1.3
8
mA
A
0.4
V
A
2
RXD Output Pin (Open Drain)
2.1
Low-level output sink current
Normal Mode
VLIN = 0V, VRXD = 0.4V
1
IRXDL
2.2
RXD saturation voltage
5-kΩ pull-up resistor to 5V
1
VsatRXD
2.3
High-level leakage current
Normal Mode
VLIN = VBAT, VRXD = 5V
1
IRXDH
–3
+3
µA
A
2.4
ESD zener diode
IRXD = 100 µA
1
VZRXD
5.8
8.6
V
A
3
2.5
TXD Input Pin
3.1
Low-level voltage input
4
VTXDL
–0.3
+0.8
V
A
3.2
High-level voltage input
4
VTXDH
2
5.5
V
A
600
kΩ
A
+3
µA
A
8
mA
A
+0.8
V
A
3.3
Pull-down resistor
VTXD = 5V
4
RTXD
125
3.4
Low-level leakage current
VTXD = 0V
4
ITXD_leak
–3
3.5
Low-level output sink current
Fail-safe Mode, local wake up
VTXD = 0.4V
VLIN = VBAT
4
ITXD
1.3
2
VENL
–0.3
4
2.5
EN Input Pin
4.1
Low-level voltage input
4.2
High-level voltage input
2
VENH
2
4.3
Pull-down resistor
VEN = 5V
2
REN
125
4.4
Low-level input current
VEN = 0V
2
IEN
5
250
5.5
V
A
600
kΩ
A
–3
+3
µA
A
250
INH Output Pin
5.1
High-level voltage
Normal Mode
IINH = –2 mA
8
VINHH
VS – 3
VS
V
A
5.2
Leakage current
Sleep Mode
VINH = 0V/27V, VS = 27V
8
IINHL
–3
+3
µA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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ATA6662
6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No.
Parameters
6
WAKE Pin
Test Conditions
Pin
Symbol
Min.
3
VWAKEH
Typ.
Max.
Unit
Type*
VS –
1V
VS +
0.3V
V
A
VS –
3.3V
V
A
6.1
High-level input voltage
6.2
Low-level input voltage
IWAKE = Typically –3 µA
3
VWAKEL
–1V
6.3
Wake pull-up current
VS < 27V
3
IWAKE
–30
µA
A
6.4
High-level leakage current
VS = 27V, VWAKE = 27V
3
IWAKE
–5
+5
µA
A
0.9 ×
VS
VS
V
A
7
–10
LIN Bus Driver
7.1
Driver recessive output voltage
RLOAD = 500Ω / 1 kΩ
6
VBUSrec
7.2
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 500Ω
6
V_LoSUP
1.2
V
A
7.3
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 500Ω
6
V_HiSUP
2
V
A
7.4
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 1000Ω
6
V_LoSUP_1k
0.6
V
A
7.5
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 1000Ω
6
V_HiSUP_1k_
0.8
V
A
7.6
Pull-up resistor to VS
The serial diode is mandatory
6
RLIN
20
60
kΩ
A
7.7
Voltage drop at the serial diodes
In pull-up path with Rslave
ISerDiode = 10 mA
6
VSerDiode
0.4
1.0
V
D
7.8
LIN current limitation
VBUS = VBAT_max
6
IBUS_LIM
40
200
mA
A
7.9
Input leakage current at the
receiver, including pull-up
resistor as specified
Input leakage current
Driver off
VBUS = 0V, VS = 12V
6
IBUS_PAS_dom
–1
mA
A
7.10
Leakage current LIN recessive
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS ≥ VBAT
6
IBUS_PAS_rec
7.11
Leakage current at ground loss;
Control unit disconnected from GNDDevice = VS
ground; Loss of local ground
VBAT =12V
must not affected communication 0V < VBUS < 18V
in the residual network
6
IBUS_NO_gnd
7.12
Leakage current at loss of
battery; Node has to substain the VBAT disconnected
current that can flow under this VSUP_Device = GND
0V < VBUS < 18V
condition; Bus must remain
operational under this condition
6
IBUS_NO_bat
7.13
Capacitance on pin LIN to GND
6
CLIN
–10
30
120
10
20
µA
A
+0.5
+10
µA
A
0.1
2
µA
A
20
pF
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No.
8
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
0.5 ×
VS
0.525
× VS
V
A
LIN Bus Receiver
8.1
Center of receiver threshold
VBUS_CNT =
(Vth_dom + Vth_rec) / 2
6
VBUS_CNT
0.475 ×
VS
8.2
Receiver dominant state
VEN = 5V
6
VBUSdom
–27
0.4 ×
VS
V
A
8.3
Receiver recessive state
VEN = 5V
6
VBUSrec
0.6 ×
VS
40
V
A
8.4
Receiver input hysteresis
VHYS = Vth_rec – Vth_dom
6
VBUShys
0.028 ×
VS
0.175
× VS
V
A
8.5
Pre-wake detection LIN
High-level input voltage
6
VLINH
VS –
2V
VS +
0.3V
V
A
8.6
Pre-wake detection LIN
Low-level input voltage
Switches the LIN receiver on
6
VLINL
–27V
VS –
3.3V
V
A
9
0.1 ×
VS
Internal Timers
9.1
Dominant time for wake-up via
LIN bus
VLIN = 0V
6
tBUS
30
90
150
µs
A
9.2
Time of low pulse for wake-up
via pin WAKE
VWAKE = 0V
3
tWAKE
7
35
50
µs
A
9.3
Time delay for mode change
from Fail-safe Mode to Normal
Mode via pin EN
VEN = 5V
2
tnorm
2
7
15
µs
A
9.4
Time delay for mode change
from Normal Mode into Sleep
Mode via pin EN
VEN = 0V
2
tsleep
2
7
12
µs
A
9.5
TXD dominant time out time
VTXD = 0V
4
tdom
6
9
20
ms
A
9.6
Power-up delay between VS = 5V
VVS = 5V
until INH switches to high
200
µs
A
10
LIN Bus Driver AC Parameter with Different Bus Loads
Load 1 (small): 1 nF, 1 kΩ ; Load 2 (large): 10 nF, 500Ω ; RRXD = 5 kΩ ; CRXD = 20 pF;
Load 3 (medium): 6.8 nF, 660Ω characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper
operation at 20 Kbit/s, 10.3 and 10.4 at 10.4 Kbit/s.
10.1
10.2
10.3
tVS
Duty cycle 1
THRec(max) = 0.744 × VS
THDom(max) = 0.581 × VS
VS = 7.0V to 18V
tBit = 50 µs
D1 = tbus_rec(min) / (2 × tBit)
6
D1
Duty cycle 2
THRec(min) = 0.422 × VS
THDom(min) = 0.284 × VS
VS = 7.0V to 18V
tBit = 50 µs
D2 = tbus_rec(max) / (2 × tBit)
6
D2
Duty cycle 3
THRec(max) = 0.778 × VS
THDom(max) = 0.616 × VS
VS = 7.0V to 18V
tBit = 96 µs
D3 = tbus_rec(min) / (2 × tBit)
6
D3
0.396
A
0.581
0.417
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12
ATA6662
4916O–AUTO–05/10
ATA6662
6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C
No.
10.4
Parameters
Test Conditions
Duty cycle 4
THRec(min) = 0.389 × VS
THDom(min) = 0.251 × VS
VS = 7.0V to 18V
tBit = 96 µs
D4 = tbus_rec(max) / (2 × tBit)
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
6
D4
0.590
6
µs
A
+2
µs
A
A
Receiver Electrical AC Parameters of the LIN Physical Layer
LIN receiver, RXD load conditions: CRXD = 20 pF, Rpull-up = 5 kΩ
11
11.1
Propagation delay of receiver
(see Figure 6-1 on page 13)
trec_pd = max(trx_pdr, trx_pdf)
VS = 7.0V to 18V
1
trx_pd
11.2
Symmetry of receiver
propagation delay rising edge
minus falling edge
trx_sym = trx_pdr – trx_pdf
VS = 7.0V to 18V
1
trx_sym
–2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Figure 6-1.
Definition of Bus Timing Parameter
tBit
tBit
tBit
TXD
(Input to transmitting node)
tBus_dom(max)
tBus_rec(min)
Thresholds of
THRec(max)
receiving node 1
VS
(Transceiver supply
of transmitting node)
THDom(max)
LIN Bus Signal
Thresholds of
THRec(min)
receiving node 2
THDom(min)
tBus_dom(min)
tBus_rec(max)
RXD
(Output of receiving node 1)
trx_pdr(1)
trx_pdf(1)
RXD
(Output of receiving node 2)
trx_pdr(2)
trx_pdf(2)
13
4916O–AUTO–05/10
Figure 6-2.
Application Circuit
Master node
pull-up
VBATTERY
22 µF
100 nF
12V
1k
7
ATA6662
5 kΩ
VDD
VS
Receiver
1
LIN sub bus
5V
RXD
Filter
Microcontroller
LIN
Wake-up bus timer
4
TXD
Time-out
timer
TXD
GND IO
14
3
WAKE
220 pF
Control unit
10 kΩ
33 kΩ
Slew rate control
Short-circuit and
overtemperature
protection
VS
VS
External
switch
6
Wake-up
timer
5
Sleep mode
GND
2
8
EN
INH
ATA6662
4916O–AUTO–05/10
ATA6662
7. Ordering Information
Extended Type Number
Package
Remarks
ATA6662-TAQY
SO8
LIN transceiver, Pb-free, 4k, taped and reeled
ATA6662C-TAQY
SO8
LIN transceiver, Pb-free, 4k, taped and reeled
8. Package Information
Package: SO 8
Dimensions in mm
5±0.2
4.9±0.1
0.1+0.15
1.4
0.2
3.7±0.1
0.4
1.27
3.8±0.1
6±0.2
3.81
8
5
technical drawings
according to DIN
specifications
1
4
Drawing-No.: 6.541-5031.01-4
Issue: 1; 15.08.06
15
4916O–AUTO–05/10
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
16
Revision No.
History
4916O-AUTO-05/10
• Features on page 1 changed
• Heading 3.6: text changed
4916N-AUTO-03/10
•
•
•
•
4916M-AUTO-09/09
• Figure 1-1 “Block Diagram” on page 1 changed
• Section 4 “Absolute Maximum Ratings” on page 8 changed
• Figure 6-2 “Application Circuit” on page 14 changed
4916L-AUTO-02/09
• Section 6 “El.Characteristics” numbers 3.2 and 4.2 on page 9 changed
4916K-AUTO-12/08
•
•
•
•
•
•
•
•
•
•
•
•
Figure 2-1 “Pinning SO8” on page 2 changed
Section 3.2 “Supply Pin (VS)” on page 3 changed
Section 3.8 “Enable Input Pin (EN)” on page 4 changed
Section 3.11 “Operation Modes” on page 5 changed
Section 3.12 “Remote Wake-up via Dominant Bus State” on page 5 changed
Section 3.14 “Wake-up Source Recognition” on page 6 changed
Figure 3.2 “LIN Wake-up Waveform Diagram” on page 7 changed
Figure 3.3 “Wake-up from Wake-up Switch” on page 7 changed
Section 4 “Absolute Maximum Ratings” on page 8 changed
Section 5 “Thermal Resistance” on page 8 changed
Section 6 “Electrical Characteristics” on pages 9 to 12 changed
Figure 6-2 “Application Circuit” on page 13 changed
4916J-AUTO-02/08
•
•
•
•
“Pre-normal Mode” in “Fail-safe Mode” changed
Section 3.9 “Inhibit Output Pin (INH) on page 4 changed
Section 4 “Absolute Maximum Ratings” on page 8 changed
Section 6 “Electrical Characteristics” number 5.1 on page 9 changed
4916I-AUTO-12/07
• Section 3.1 “Physical Layer Compatibility” on page 3 added
• Section 6 “El.Characteristics” numbers 1.5, 1.6 and 1.7 on page 9 changed
4916H-AUTO-10/07
• Section 7 “Ordering Information” on page 14 changed
4916G-AUTO-07/07
• Put datasheet in a new template
• Capital T for time generally changed in a lower case t
Features on page 1 changed
Section 4 “Absolute Maximum Ratings” on page 9 changed
Section 6 “Electrical Characteristics” number 7.13 on page 11 added
Section 7 “Ordering Information” on page 16 changed
ATA6662
4916O–AUTO–05/10
ATA6662
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document. (Continued)
Revision No.
History
4916F-AUTO-05/07
•
•
•
•
4916E-AUTO-02/07
• Section 4 “Absolute Maximum Ratings” on page 8 changed
• Section 2 “Electrical Characteristics” on pages 9 to 11 changed
4916D-AUTO-02/07
•
•
•
•
•
•
•
•
•
•
Figure 1-1 “Block Diagram” on page 1 changed
Figure 6-2 “Application Circuit” on page 13 changed
Features on page 1 changed
Section 6 “El.Characteristics” numbers 10.1 to 10.4 and 11.1, 11.2 changed
Features on page 1 changed
Section 1 “Description” on page 1 changed
Table 2-1 “Pin Description” on page 2 changed
Section 3.2 “Ground Pin (GND) on page 3 changed
Section 3.7 “Enable Input Pin (EN)” on page 4 changed
Section 3.11 “Remote Wake-up via Dominant Bus State” on page 5 changed
Figure 3-1 “Mode of Operation” on page 6 changed
Section 3-14 “Fail-safe Features” on page 6 changed
Section 4 “Absolute Maximum Ratings” on page 8 changed
Section 6 “Electrical Characteristics” on pages 9 to 11 changed
17
4916O–AUTO–05/10
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4916O–AUTO–05/10