Obsolete Product – not recommended for new design LX3055 ® TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. LX3055 single die Coplanar Waveguide , 50Ω High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side 125µm Pad pitch Die good for bond wire or flip chip applications bs ol et e Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. The LX3055 4 Gbps coplanar waveguide photodiode is currently offered in die form allowing manufacturers the versatility of WWW . Microsemi .C OM KEY FEATURES DESCRIPTION APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PRODUCT HIGHLIGHT BENEFITS Large wire bond contact pads Low contact resistance Wire bond or flip chip applications Ground- Signal-Ground pad configuration for standard RF test probes O Coplanar Design (gnd-signalgnd) 50Ω characteristic impedance 125µm standard pad pitch for ease of test Large 75µm x 75µm pad size for ease of packaging Wire bond or Flip Chip capability 4 Gigabit Fiber Channel 1310nm CATV Optical Applications SONET/SDH OC-48, ATM 2.5Gb/s or 3.125Gb/s Ethernet 1310nm VCSEL receivers Optical Backplane LX3055 Copyright © 2004 Rev. 1.1, 2005-09-15 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Obsolete Product – not recommended for new design LX3055 ® TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM Operating Junction Temperature...................................................................... -20 to +85 °C Storage Temperature Range ........................................................................... -55 to +125 °C Maximum Soldering Temperature (10 seconds maximum) ....................................... 260 °C n Contact p Contact n Contact (Cathode) bs ol et e Note: Exceeding these ratings could cause damage to the device. LX3055 ELECTRICAL CHARACTERISTICS Test conditions: TA = 25°C, VR = 2V Parameter ` Symbol Test Conditions Min LX3055 Typ Max Units ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity 1 VR = 2V, λ = 1550nm VR = 2V, λ = 1310nm VR = 5V IR = 10µA VR = 2V VR = 2V, λ = 1550nm @ - 3dB R Dark Current Breakdown Voltage Capacitance Bandwidth 2 ID BVR C BW 0.85 0.80 30 6.5 60 1.0 0.90 0.6 44 0.35 8 6 0.40 µm A/W nA V pF GHz Note: 1. Antireflective coating is ¼ wavelength @ 1430nm covering 1310 and 1550nm applications 2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value) RDIODE RSER LSER1 CDIODE LSER2 CSHUNT CPW Pads PACKAGE DATA O APPLICATION CIRCUITS Figure x – Typical VRM Application Results LX3055 Copyright © 2004 Rev. 1.1, 2005-09-15 RSET (Ohm) 20.1 LSER1 (pH) 1.6 LSER2 (pH) 1.5 CSHUNT (fF) 7.1 CDIODE (fF) 311 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 RDIODE (M Ohm) 730 Page 2 Obsolete Product – not recommended for new design LX3055 ® TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET SPARE TABLE WWW . Microsemi .C OM 325.0 250.0 125.0 X 75um 12.5um 75um 50um bs ol et e Y A v 145um n p n contact contact contact (cathode) p w 450um Active Area, µm (A) 60 Die Dimension, µm Y 450 X 450 Pad Dimension, µm w v 75 75 Pad Pitch, µm (p) Die thickness, µm 125 152 PRECAUTIONS FOR USE ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2004 Rev. 1.1, 2005-09-15 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 MECHANICALS O NOTES Obsolete Product – not recommended for new design LX3055 ® TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET WWW . Microsemi .C OM LX3055 Bandwidth (Vr = 1.0V~ 5.0V, at 1550 nm ) C-V of LX3055 Vr=1.0V: BW=7.15GHz 11 Capacitance (pF) 10 Vr=1.5V: BW=7.50GHz 9 8 Vr=2V: BW=8.00GHz 7 6 Vr=3V: BW=9.55GHz 5 Vr=5V: BW=9.95GHz 4 3 0 0.45 0.4 0.35 0.3 bs ol et e Relative S21 (dB) 12 1 2 3 4 5 6 7 8 9 0.25 0 10 Breakdown Voltage vs. Temperature Dark Current vs Voltage over Temperature 55 Dark Current (nA) -10 Deg C 25 Deg C 1.E+01 50 Deg C 85 Deg C 1.E+00 110 Deg C 1.E-01 Breakdow n Voltage (V) -45 Deg C 1.E+02 10 Reverse Bias (V) Frequency （GHz） 1.E+03 5 50 45 40 35 -60 -40 -20 1.E-02 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 Temperature ( Deg C) O Reverse Bias Voltage (V) CHARTS Copyright © 2004 Rev. 1.1, 2005-09-15 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4