PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved VCE(on) typ. = 2.4V @VGE = 15V, IC = 150A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C I CM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 150 300 300 300 ±20 2500 780 406 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ. Max. — — 0.1 — — 400 0.16 0.20 — 4.0 3.0 — Units °C/W N. m g 1 3/20/98 GA150TD120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 1200 Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.0 ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage — gfe Forward Transconductance — ICES Collector-to-Emitter Leaking Current — — Diode Forward Voltage - Maximum — VFM — IGES Gate-to-Emitter Leakage Current — V(BR)CES VCE(on) Typ. Max. Units Conditions — — VGE = 0V, IC = 1mA 2.4 2.9 VGE = 15V, IC = 150A 2.2 — V VGE = 15V, IC = 150A, TJ = 125°C — 6.0 IC = 1.75 mA -11 — mV/°C VCE = VGE, IC = 1.75mA 201 — S VCE = 25V, IC = 150A — 2 mA VGE = 0V, VCE = 1200V — 20 VGE = 0V, VCE = 1200V, TJ = 125°C 2.7 3.5 V IF = 150A, VGE = 0V 2.6 — IF = 150A, VGE = 0V, TJ = 125°C — 500 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 1139 192 377 414 208 552 342 29 32 61 25630 1139 221 186 133 12381 2524 Max. Units Conditions 1709 VCC = 400V, VGE = 15V 288 nC IC = 171A 566 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω — ns IC = 150A — VCC = 720V — VGE = ±15V — mJ See Fig.17 through Fig.21 — 90 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 150A — A RG1= 15 Ω — nC RG2 = 0 Ω — A/µs VCC = 720V di/dt=1260A/µs Details of note through are on the last page 2 www.irf.com GA150TD120U 120 F or b oth: D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified Load Current ( A ) LOAD CURRENT (A) 100 P ow er D is s ipation = 134 W 80 S q u a re w a v e: 60% of rated v oltage 60 I 40 Ide a l d io d e s 20 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 TJ = 125 °C 100 100 TJ = 125 ° C TJ = 25 °C V GE = 15V 80µs PULSE WIDTH 10 1.0 1.5 2.0 2.5 3.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 25 ° C 10 V CC = 25V 50V 5µs PULSE WIDTH 1 5 6 7 8 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA150TD120U 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 200 150 100 50 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH 3.0 IC = 300 A IC = 150 A 2.0 IC = 75 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ((° °C C) ) TC , Case Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T he rm a l R e sp on s e (Zth JC ) 1 0.1 D = 0.50 PDM 0.20 t 1 t2 0.10 0.05 0.02 0.01 0.01 0.0001 Notes: 1. Duty factor D = t 1 / t 2 S IN G LE P U LS E (TH E R M A L R E S P O N S E ) 0.001 0.01 2. Peak TJ = PDM x Z thJC + TC 0.1 1 10 100 A 1000 t 1 , R e cta n g u la r P u ls e D u ra tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA150TD120U 50000 VGE , Gate-to-Emitter Voltage (V) 40000 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 30000 C oes 20000 Cres 10000 VCC = 400V I C = 171A 15 10 5 0 0 1 10 0 100 200 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage V CC V GE TJ 90 I C 1000 = 720V = 15V = 125 25 ° C = 150A 80 70 60 50 0 10 20 30 40 RG , Gate Resistance (Ohm) (Ω) RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 600 800 1000 1200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 400 Q G , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 50 15Ω = 15Ohm RG1 Ω ;RG2 = 0 Ω G =15 VGE = 15V VCC = 720V 960V IC = 300 A 100 IC = 150 A IC = 75 A 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA150TD120U 400 RRG1 ;RG2 = 0 Ω =Ω 15Ohm G =15 T J = 150 ° C VCC = 720V 125 VGE = 15V IC , Collector Current ( A ) Total Switching Losses (mJ) 150 100 75 50 25 300 SAFE OPERATING AREA 200 100 0 0 50 100 150 200 250 300 V G E = 20V T J = 125°C V C E m easured at term inal (Peak Voltage) A 0 350 0 I C , Collector Current (A) 200 400 600 800 1000 1200 1400 VCE , Collector-to-Em itter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 25000 1000 Instantaneous Forward Current - IF ( A ) IF = 300A IF = 150A 20000 IF = 75A 100 QRR - ( nC) 15000 T = 1 25°C J TJ = 25 °C 10000 5000 V R = 7 20V T J = 1 2 5 °C T J = 2 5 °C 10 1.0 2.0 3.0 4.0 F o rwa rd Vo lta g e D ro p - V FM(V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 0 500 800 1100 1400 di f /dt - (A/µ s ) 1700 2000 Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA150TD120U 250 400 IF = 300A I F = 300A IF = 150A I F = 150A IF = 75A 200 IF = 75A IRRM - ( A ) trr - ( ns ) 300 200 150 100 100 50 VR = 7 20 V T J = 1 25 °C T J = 2 5°C 0 500 800 1100 1400 di f /dt - (A/µ s) 1700 VR = 7 2 0 V TJ = 1 2 5 ° C T J = 2 5 °C 2000 Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 0 500 800 1100 1400 1700 2000 d i f /d t - (A /µ s ) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA150TD120U 90% V ge +V ge V ce Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = ∫ Vce Ic dt t1+5µ S V ce ic dt t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g ∫ trr Ic dtid dt Ic dt trr Q rr = Ic tx +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 Vce Ic dt c e ieIc dt dt E on = VVce t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr 8 ∫ t4 Vd Ic dt VVd d idIc dt dt E rec = t3 t4 Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr www.irf.com GA150TD120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit D.U.T. L 1000V Vc* RL= 600V 4 X IC @25°C 0 - 600V 50V 600 0µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 22. Pulsed Collector Current Test Circuit 9 GA150TD120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 10 www.irf.com